STS13N3LLH5 N-channel Power Mosfet
Product Information:
The STS13N3LLH5 is an N-channel Power MOSFET with a voltage
rating of 30 V. It is designed as a SO-8 STripFETTM V type and has
a low on-resistance (RDS(on)) of 0.006 Ω. This MOSFET is capable of
handling a maximum continuous drain current (ID) of 13 A.
Product Usage Instructions:
Before using the STS13N3LLH5 Power MOSFET, please ensure you
follow these instructions:
- Ensure that the power supply is disconnected before handling or
installing the MOSFET. - Check the datasheet and product specifications to ensure the
STS13N3LLH5 is suitable for your specific application. - Take necessary precautions for electrostatic discharge (ESD)
protection, such as using an ESD wrist strap or working on an
ESD-safe surface. - Mount the MOSFET onto a suitable heatsink to ensure proper heat
dissipation during operation. - Connect the drain (D), source (S), and gate (G) pins of the
MOSFET to their respective terminals in your circuit, following the
recommended pinout provided in the datasheet. - Ensure that the voltage across the drain and source pins (VDSS)
does not exceed the maximum rating of 30 V during operation. - Take note of the maximum continuous drain current (ID) rating
of 13 A and ensure that the current in your circuit does not exceed
this limit to prevent damage to the MOSFET. - Monitor the junction temperature (TJ) of the MOSFET during
operation to prevent overheating. Keep the junction temperature
within the specified limits mentioned in the datasheet. - If abnormal behavior or overheating is observed, immediately
disconnect the power supply and inspect for any potential issues or
faults.
Following these usage instructions will help ensure proper
operation and longevity of the STS13N3LLH5 Power MOSFET.
STS13N3LLH5
N-channel 30 V, 0.006 , 13 A, SO-8 STripFETTM V Power MOSFET
Features
Type STS13N3LLH5
VDSS 30 V
RDS(on)
ID
<0.0066 13 A (1)
1. The value is rated according to Rthj-pcb.
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Applications
Switching applications
Description
This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFETTM technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DCDC converter applications, where high power density is to be achieved.
5 8
4 1
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary Order code
STS13N3LLH5
Marking 13D3L
Package SO-8
Packaging Tape and reel
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Contents
Contents
STS13N3LLH5
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS ID(1) ID (1) IDM(2) PTOT (2)
Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor
TJ
Operating junction temperature
Tstg
Storage temperature
1. The value is rated according to Rthj-pcb. 2. Pulse width limited by safe operating area.
Table 3. Thermal resistance
Symbol
Parameter
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec.
Table 4. Avalanche data
Symbol
Parameter
Not-repetitive avalanche current,
IAV
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
Electrical ratings
Value 30
+ 22 / – 20 13 8.1 52 2.7 0.02
-55 to 150
Unit V V A A A W
W/°C
°C
Value 46
Unit °C/W
Value
Unit
8.5
A
180
mJ
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Electrical characteristics
2
Electrical characteristics
STS13N3LLH5
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown voltage (VGS = 0)
IDSS
Zero gate voltage drain current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate body leakage current (VDS = 0) Gate threshold voltage
Static drain-source on resistance
Test conditions
ID = 250 µA
VDS = max rating, VDS =max rating TC = 125 °C
VGS = + 22 / – 20 V
VDS= VGS, ID = 250 µA VGS= 10 V, ID= 6.5 A VGS= 4.5 V, ID= 6.5 A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±100 nA
1
V
0.006 0.0066 0.0052 0.0091
Table 6. Symbol
Dynamic Parameter
Ciss Coss Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge Gate-source charge Gate-drain charge
Test conditions
VDS = 25 V, f=1 MHz, VGS=0
VDD=15 V, ID = 13A VGS= 4.5 V (see Figure 14)
Min. Typ. Max. Unit
1500
pF
– 295
–
pF
39
pF
12
nC
–
4
–
nC
4.7
nC
Table 7. Switching times
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Test conditions
VDD=15 V, ID= 6.5 A, RG=4.7 , VGS =10 V (see Figure 13)
Min. –
Typ.
9.3 14.5 22.7 4.5
Max. Unit
ns ns ns ns
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Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 13 A, VGS=0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs, VDD= 25 V, Tj=150 °C
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
–
13 A
–
52 A
–
1.1 V
25
ns
– 17.5
nC
1.4
A
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Electrical characteristics
Electrical characteristics (curves)
STS13N3LLH5
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature
BVDSS
(norm)
1.1
HV42950
1.08
1.06
ID=1 mA
1.04
1.02
1
0.98
0.96
0.94
0.92 -55 -30 -5
20 45 70 95 120 145 TJ(°C)
Figure 7. Static drain-source on resistance
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STS13N3LLH5
Electrical characteristics
Figure 8.
VGS(V) 12 10 8
Gate charge vs gate-source voltage Figure 9. Capacitance variations
HV42940
C(pF)
ID=13 A
2000
f=1MHz VGS=0
1500
HV42930
Ciss
6
1000
4
2
500 Coss
Crss
0
0
5
10
15
20 Qg(nC)
0
0
10
20
C(pF)
Figure 10. Normalized gate threshold voltage vs temperature
VGS(th)
(norm)
1.2
HV42960 ID=250 µA
1
0.8
0.6
0.4
0.2
0 -55 -30 -5 20 45 70 95 120 145 TJ(°C)
Figure 11. Normalized on resistance vs temperature
RDS(on)
(norm)
1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 -55 -30 -5
ID=6.5 A
HV42970
20 45 70 95 120 145 TJ(°C)
Figure 12. Source-drain diode forward characteristics
VSD(V)
HV42980
0.9
0.8
TJ=-55 °C
TJ=25 °C 0.7
0.6
0.5
TJ=150 °C
0.4 0
5
10
15
ISD(A)
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Test circuits
3
Test circuits
STS13N3LLH5
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
VDD
VD VGS
RG
PW
RL
2200
µF
D.U.T.
3.3 µF VDD
12V
47k
1k
100nF
Vi=20V=VGMAX
2200 µF
IG=CONST 2.7k
100
D.U.T. VG
47k
PW
AM01468v1
1k
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
G 25
A D
D.U.T.
S B
AA
FAST DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
V(BR)DSS VD
Figure 18. Switching time waveform
ton
tdon
tr
toff tdoff tf
VDD
IDM ID
0 VDD
90%
10% VDS
90% VGS
90% 10%
AM01472v1
0
10%
AM01473v1
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STS13N3LLH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Package mechanical data
Table 9. SO-8 mechanical data
Dim.
Min.
mm Typ.
A
A1
0.10
A2
1.25
b
0.28
c
0.17
D
4.80
4.90
E
5.80
6.00
E1
3.80
3.90
e
1.27
h
0.25
L
0.40
L1
1.04
k
0°
ccc
Figure 19. SO-8 drawing
STS13N3LLH5
Max. 1.75 0.25
0.48 0.23 5.00 6.20 4.00
0.50 1.27
8° 0.10
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STS13N3LLH5
5
Revision history
Table 10. Document revision history
Date
Revision
30-Jun-2011
1
First release.
Revision history Changes
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STS13N3LLH5
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