onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced Optical Inspection
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit | ||
| Drain−to−Source Voltage | VDSS | 100 | V | ||
| Gate−to−Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current RSJC (Notes 1, 3) | Steady State | TC = 25°C | ID | 132 | A |
| TC = 100°C | 84 | ||||
| Power Dissipation RSJC (Note 1) | Steady State | TC = 25°C | PD | 139 | W |
| TC = 100°C | 56 | ||||
| Continuous Drain Current RSJA (Notes 1, 2, 3) | Steady State | TA = 25°C | ID | 20 | A |
| TA = 100°C | 13 | ||||
| Power Dissipation RSJA (Notes 1, 2) | Steady State | TA = 25°C | PD | 3.2 | W |
| TA = 100°C | 1.3 | ||||
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 888 | A | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to +175 | °C | ||
| Source Current (Body Diode) | IS | 116 | A | ||
| Single Pulse Drain−to−Source Avalanche Energy (IAS = 9.2 A) | EAS | 739 | mJ | ||
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C | ||
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Junction−to−Case − Steady State | RSJC | 0.9 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 39 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.|
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
NVMFS3D6N10MCL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 µA | 100 | V | |||
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | 60 | mV/°C | ||||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 100 V | TJ = 25 °C | 1.0 | µA | ||
| TJ = 125°C | 250 | ||||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | |||
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 270 µA | 1 | 1.5 | 3 | V | |
| Threshold Temperature Coefficient | VGS(TH)/TJ | −5.0 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 48 A | 3.0 | 3.6 | mQ | |
| VGS = 4.5 V | ID = 39 A | 4.4 | 5.8 | ||||
| Forward Transconductance | gFS | VDS =5 V, ID = 48 A | 163 | S | |||
CHARGES, CAPACITANCES & GATE RESISTANCE
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 50 V | 4411 | pF | ||
| Output Capacitance | COSS | 1808 | ||||
| Reverse Transfer Capacitance | CRSS | 29 | ||||
| Total Gate Charge | QG(TOT) | VGS = 4.5 V, VDS = 50 V; ID = 48 A | 29 | nC | ||
| Total Gate Charge | QG(TOT) | VGS = 10 V, VDS = 50 V; ID = 48 A | 60 | nC | ||
| Threshold Gate Charge | QG(TH) |
VGS = 10 V, VDS = 50 V; ID = 48 A | 6 | nC | ||
| Gate−to−Source Charge | QGS | 10 | ||||
| Gate−to−Drain Charge | QGD | 7 | ||||
| Plateau Voltage | VGP | 3 | V |
SWITCHING CHARACTERISTICS (Note 5)
| Turn−On Delay Time | td(ON) | VGS = 10 V, VDS = 50 V, ID = 48 A, RG = 6.0 Q | 14.6 |
ns | ||
| Rise Time | tr | 7 | ||||
| Turn−Off Delay Time | td(OFF) | 62.3 | ||||
| Fall Time | tf | 20.2 |
DRAIN−SOURCE DIODE CHARACTERISTICS
| Source to Drain Diode Forward Voltage | VSD | VGS = 0 V, IS = 2 A | 0.65 | 1.2 | V | |
| VGS = 0 V, IS = 48 A | 0.83 | 1.3 | ||||
| Reverse Recovery Time | trr | IF = 24 A, di/dt = 300 A/µs | 34 | ns | ||
| Reverse Recovery Charge | Qrr | 73 | nC | |||
| Reverse Recovery Time | trr | IF = 24 A, di/dt = 1000 A/µs | 28 | ns | ||
| Reverse Recovery Charge | Qrr | 183 | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Pulse Test: pulse width 300 s, duty cycle 2%.
Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping† |
| NVMFS3D6N10MCLT1G | 3D6L10 | DFN5 5×6, 1.27P (Pb−Free) | 1500 / Tape & Reel |
| NVMFWS3D6N10MCLT1G | 3D6W10 | DFNW5, 5×6 (FULL−CUT SO8FL WF) (Pb−Free, Wettable Flanks) | 1500 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
| DOCUMENT NUMBER: | 98AON14036D | Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. | |
| DESCRIPTION: | DFN5 5×6, 1.27P (SO−8FL) | PAGE 1 OF 1 | |
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