onsemi FDB86363-F085 MOSFET N-Channel PowerTrench
FDB86363-F085
Features
- Typical RDS(on) = 2.0 m at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- AEC−Q101 Qualified and PPAP Capable
- This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
- Automotive Engine Control
- Power Train Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12 V Systems
D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ
PIN CONFIGURATION
| Position | Designation |
| Pin 1 | Gate |
| Pin 2 / Tab | Drain |
| Pin 3 | Source |
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FDB86363 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted)
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain−to−Source Voltage | 80 | V |
| VGS | Gate−to−Source Voltage | ±20 | V |
| ID | Drain Current −Continuous (VGS = 10 V) (Note 1) TC = 25°C | 110 | A |
| −Pulsed TC = 25°C | See Figure 4 | ||
| EAS | Single Pulse Avalanche Energy (Note 2) | 512 | mJ |
| PD | Power Dissipation | 300 | W |
| Derate Above 25°C | 2.0 | W/°C | |
| TJ, TSTG | Operating and Storage Temperature | −55 to +175 | °C |
| RqJC | Thermal Resistance, Junction to Case | 0.5 | ° C/W |
| RqJA | Maximum Thermal Resistance, Junction to Ambient (Note 3) | 43 | ° C/W |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Current is limited by bondwire configuration.
- Starting TJ = 25°C, L = 0.25 mH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche.
- RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper.
PACKAGE MARKING AND ORDERING INFORMATION
| Device Marking | Device | Package | Shipping† |
| FDB86363 | FDB86363−F085 | D2PAK (TO−263) (Pb−Free/Halide Free) | 800 units / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
OFF CHARACTERISTICS
| BVDSS | Drain−to−Source Breakdown Voltage | ID = 250 A, VGS = 0 V | 80 | V | ||
| IDSS | Drain−to−Source Leakage Current | VDS = 80 V, VGS = 0 V, TJ = 25°C | 1 | A | ||
| VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) | 1 | mA | ||||
| IGSS | Gate−to−Source Leakage Current | VGS = ±20 V | ±100 | nA |
ON CHARACTERISTICS
| VGS(th) | Gate to Source Threshold Voltage | VGS = VDS, ID = 250 A | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Drain−to−Source On−Resistance | ID = 80 A, VGS = 10 V, TJ = 25°C | 2.0 | 2.4 | mQ | |
| ID = 80 A, VGS = 10 V, TJ = 175°C (Note 4) | 3.8 | 4.3 |
DYNAMIC CHARACTERISTICS
| Ciss | Input Capacitance | VDS = 40 V, VGS = 0 V, f = 1 MHz | 10000 | pF | |||
| Coss | Output Capacitance | 1400 | pF | ||||
| Crss | Reverse Transfer Capacitance | 95 | pF | ||||
| Rg | Gate Resistance | f = 1 MHz | 3.3 | Q | |||
| Qg(TOT) | Total Gate Charge | VGS = 0 V to 10 V | VDD = 64 V, ID = 80 A | 131 | 150 | nC | |
| Qg(th) | Threshold Gate Charge | VGS = 0 V to 2 V | 18 | 21 | nC | ||
| Qgs | Gate−to−Source Gate Charge | 47 | nC | ||||
| Qgd | Gate−to−Drain “Miller” Charge | 24 | nC | ||||
SWITCHING CHARACTERISTICS
| ton | Turn−On Time | VDD = 40 V, ID = 80 A, VGS = 10V, RGEN = 6 Q | 231 | ns | ||
| td(on) | Turn−On Delay | 38 | ns | |||
| tr | Rise Time | 129 | ns | |||
| td(off) | Turn−Off Delay | 64 | ns | |||
| tf | Fall Time | 40 | ns | |||
| toff | Turn−Off Time | 135 | ns |
DRAIN−SOURCE DIODE CHARACTERISTICS
| VSD | Source−to−Drain Diode Voltage | VGS = 0 V, ISD = 80 A VGS = 0 V, ISD = 40 A | 1.25 1.2 | V | ||
| trr | Reverse−Recovery Time | IF = 80 A, 11ISD/11t = 100 A/ s, VDD = 64 V | 88 | 101 | ns | |
| Qrr | Reverse−Recovery Charge | 129 | 157 | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
TYPICAL CHARACTERISTICS
Figure 1. Normalized Power Dissipation vs. Case Temperature 
Figure 2. Maximum Continuous Drain Current vs. Case Temperature 
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability 
Figure 5. Forward Bias Safe Operating Area 
AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability 
Figure 7. Transfer Characteristics 
Figure 8. Forward Diode Characteristics 
Figure 9. Saturation Characteristics 
Figure 10. Saturation Characteristics 
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature 
Figure 13. Normalized Gate Threshold Voltage vs. Temperature 
Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 
Figure 15. Capacitance vs. Drain to Source Voltage 
Figure 16. Gate Charge vs. Gate to Source Voltage
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
SCALE 1:1
DATE 11 MAR 2021
XXXXXX = Specific Device Code
- A = Assembly Location
- WL = Wafer Lot
- Y = Year
- WW = Work Week
- W = Week Code (SSG)
- M = Month Code (SSG)
- G = Pb−Free Package
- AKA = Polarity Indicator
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
DOCUMENT NUMBER: 98AON56370E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1
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