onsemi NTMFS5C612N Power Single N-Channel
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit | ||
| Drain−to−Source Voltage | VDSS | 60 | V | ||
| Gate−to−Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current RSJC (Notes 1, 3) |
Steady State | TC = 25°C | ID | 230 | A |
| TC = 100°C | 160 | ||||
| Power Dissipation RSJC (Note 1) | TC = 25°C | PD | 170 | W | |
| TC = 100°C | 84 | ||||
| Continuous Drain Current RSJA (Notes 1, 2, 3) |
Steady State | TA = 25°C | ID | 35 | A |
| TA = 100°C | 25 | ||||
| Power Dissipation RSJA (Notes 1, 2) | TA = 25°C | PD | 3.8 | W | |
| TA = 100°C | 1.9 | ||||
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 900 | A | |
| Operating Junction and Storage Temperature | TJ, Tstg | − 55 to +175 | °C | ||
| Source Current (Body Diode) | IS | 190 | A | ||
| Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) | EAS | 451 | mJ | ||
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C | ||
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Junction−to−Case − Steady State | RSJC | 0.9 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 39 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
V(BR)DSS RDS(ON) MAX ID MAX 60 V 1.6 mQ @ 10 V 230 A
N−CHANNEL MOSFET
DFN5 (SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
- 5C612N = Specific Device Code
- A = Assembly Location
- Y = Year
- W = Work Week
- ZZ = Lot Traceability
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 µA | 60 | V | |||
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | 12.8 | mV/°C | ||||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 60 V | TJ = 25°C | 10 | µA | ||
| TJ = 125°C | 250 | ||||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | |||
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250 µA | 2.0 | 4.0 | V | ||
| Threshold Temperature Coefficient | VGS(TH)/TJ | −9.4 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 50 A | 1.4 | 1.6 | mQ | |
CHARGES, CAPACITANCES & GATE RESISTANCE
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 25 V | 4830 | pF | ||
| Output Capacitance | COSS | 3180 | ||||
| Reverse Transfer Capacitance | CRSS | 22 | ||||
| Total Gate Charge | QG(TOT) |
VGS = 10 V, VDS = 48 V; ID = 50 A | 60.2 |
nC | ||
| Threshold Gate Charge | QG(TH) | 14.2 | ||||
| Gate−to−Source Charge | QGS | 23.3 | ||||
| Gate−to−Drain Charge | QGD | 6.3 | ||||
| Plateau Voltage | VGP | 4.9 | V |
SWITCHING CHARACTERISTICS (Note 5)
| Turn−On Delay Time | td(ON) | VGS = 10 V, VDS = 48 V, ID = 50 A, RG = 2.5 Q | 14.2 |
ns | ||
| Rise Time | tr | 46.9 | ||||
| Turn−Off Delay Time | td(OFF) | 38.9 | ||||
| Fall Time | tf | 11.9 |
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | VGS = 0 V, IS = 50 A | TJ = 25°C | 0.81 | 1.0 | V | |
| TJ = 125°C | 0.67 | ||||||
| Reverse Recovery Time | tRR | VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A | 82.4 | ns | |||
| Charge Time | ta | 40.8 | |||||
| Discharge Time | tb | 41.6 | |||||
| Reverse Recovery Charge | QRR | 139 | nC | ||||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: pulse width 300 s, duty cycle 2%.
- Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping† |
| NTMFS5C612NT1G | 5C612N | DFN5 (Pb−Free) | 1500 / Tape & Reel |
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PACKAGE DIMENSIONS
For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
NOTES:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- CONTROLLING DIMENSION: MILLIMETER.
- DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
DIM
MILLIMETERS MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 −−− 0.05 b 0.33 0.41 0.51 c 0.23 0.28 0.33 D 5.00 5.15 5.30 D1 4.70 4.90 5.10 D2 3.80 4.00 4.20 E 6.00 6.15 6.30 E1 5.70 5.90 6.10 E2 3.45 3.65 3.85 e 1.27 BSC G 0.51 0.575 0.71 K 1.20 1.35 1.50 L 0.51 0.575 0.71 L1 0.125 REF M 3.00 3.40 3.80 9 0 0 −−− 12 0
GENERIC MARKING DIAGRAM*
- XXXXXX = Specific Device Code
- A = Assembly Location
- Y = Year
- W = Work Week
- ZZ = Lot Traceability
This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
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