NTMFS5C430N Power MOSFET
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit | ||
| Drain−to−Source Voltage | VDSS | 40 | V | ||
| Gate−to−Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current RSJC (Notes 1, 3) |
Steady State | TC = 25°C | ID | 185 | A |
| TC = 100°C | 131 | ||||
| Power Dissipation RSJC (Note 1) | TC = 25°C | PD | 106 | W | |
| TC = 100°C | 53 | ||||
| Continuous Drain Current RSJA (Notes 1, 2, 3) |
Steady State | TA = 25°C | ID | 35 | A |
| TA = 100°C | 25 | ||||
| Power Dissipation RSJA (Notes 1 & 2) | TA = 25°C | PD | 3.8 | W | |
| TA = 100°C | 1.9 | ||||
| Pulsed Drain Current | TA = 25°C, tp = 10 s | IDM | 900 | A | |
| Operating Junction and Storage Temperature | TJ, Tstg | − 55 to + 175 | °C | ||
| Source Current (Body Diode) | IS | 102 | A | ||
| Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 15 A) | EAS | 338 | mJ | ||
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C | ||
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Junction−to−Case − Steady State | RSJC | 1.4 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 40 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 A | 40 | V | |||
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | 12.8 | mV/°C | ||||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 40 V | TJ = 25 °C | 10 | A | ||
| TJ = 125°C | 100 | ||||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | |||
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250 A | 2.5 | 3.5 | V | ||
| Threshold Temperature Coefficient | VGS(TH)/TJ | −8.2 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 50 A | 1.4 | 1.7 | m | |
| Forward Transconductance | gFS | VDS =15 V, ID = 50 A | 130 | S | |||
CHARGES, CAPACITANCES & GATE RESISTANCE
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 25 V | 3300 | pF | ||
| Output Capacitance | COSS | 1600 | ||||
| Reverse Transfer Capacitance | CRSS | 45 | ||||
| Total Gate Charge | QG(TOT) | VGS = 10 V, VDS = 20 V; ID = 50 A | 47 |
nC | ||
| Threshold Gate Charge | QG(TH) |
VGS = 10 V, VDS = 20 V; ID = 50 A | 10 | |||
| Gate−to−Source Charge | QGS | 16 | ||||
| Gate−to−Drain Charge | QGD | 7 | ||||
| Plateau Voltage | VGP | 4.7 | V |
SWITCHING CHARACTERISTICS (Note 5)
| Turn−On Delay Time | td(ON) |
VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 | 13 |
ns | ||
| Rise Time | tr | 48 | ||||
| Turn−Off Delay Time | td(OFF) | 29 | ||||
| Fall Time | tf | 8 |
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | VGS = 0 V, IS = 50 A | TJ = 25°C | 0.83 | 1.2 | V | |
| TJ = 125°C | 0.7 | ||||||
| Reverse Recovery Time | tRR |
VGS = 0 V, dIS/dt = 100 A/ s, IS = 50 A | 57 | ns | |||
| Charge Time | ta | 30 | |||||
| Discharge Time | tb | 27 | |||||
| Reverse Recovery Charge | QRR | 68 | nC | ||||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: pulse width 300 duty cycle 2%.
- Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
MECHANICAL CASE OUTLINE
MECHANICAL CASE OUTLINEPACKAGE DIMENSIONS
| DIM | MILLIMETERS | ||
| MIN | NOM | MAX | |
| A | 0.90 | 1.00 | 1.10 |
| A1 | 0.00 | −−− | 0.05 |
| b | 0.33 | 0.41 | 0.51 |
| c | 0.23 | 0.28 | 0.33 |
| D | 5.00 | 5.15 | 5.30 |
| D1 | 4.70 | 4.90 | 5.10 |
| D2 | 3.80 | 4.00 | 4.20 |
| E | 6.00 | 6.15 | 6.30 |
| E1 | 5.70 | 5.90 | 6.10 |
| E2 | 3.45 | 3.65 | 3.85 |
| e | 1.27 BSC | ||
| G | 0.51 | 0.575 | 0.71 |
| K | 1.20 | 1.35 | 1.50 |
| L | 0.51 | 0.575 | 0.71 |
| L1 | 0.125 REF | ||
| M | 3.00 | 3.40 | 3.80 |
| 6 | 0 0 | −−− | 12 0 |
This device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
| DOCUMENT NUMBER: | 98AON14036D | Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. | |
| DESCRIPTION: | DFN5 5×6, 1.27P (SO−8FL) | PAGE 1 OF 1 | |
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