IRF520 Power MOSFET
Instruction Manual
IRF520 Power MOSFET
| PRODUCT SUMMARY | ||
| VDS (V) | 100 | |
| RDS(on) (L) | VGS = 10 V | 0.27 |
| Qg max. (nC) | 16 | |
| Qgs (nC) | 4.4 | |
| Qgd (nC) | 7.7 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRF520PbF |
| Lead (Pb)-free and halogen-free | IRF520PbF-BE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 100 | V | ||
| Gate-source voltage | VGS | ± 20 | |||
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID | 9.2 | A |
| TC = 100 °C | 6.5 | ||||
| Pulsed drain current a | IDM | 37 | |||
| Linear derating factor | 0.40 | W/°C | |||
| Single pulse avalanche energy b | EAS | 200 | mJ | ||
| Repetitive avalanche current a | IAR | 9.2 | A | ||
| Repetitive avalanche energy a | EAR | 6.0 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 60 | W | |
| Peak diode recovery dV/dt c | dV/dt | 5.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +175 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |||
| Mounting torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 | °C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | – | 2.5 | |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | Vss = 0 V, ID = 250 pA | 100 | – | – | V | |
| VDs temperature coefficient | ΔVDS/TJ | Reference to 25 °C, ID= 1 mA | – | 0.13 | – | V/°C | |
| Gate-source threshold voltage | Vssfth) | VDS = VGs, ID = 250 pA | 2.0 | – | 4.0 | V | |
| Gate-source leakage | IGS(th) | Vcs=±20 V | – | – | ± 100 | nA | |
| Zero gate voltage drain current | lGSS | VDs=100V,VGs= 0 V | 25 | μA | |||
| VDs = 80 V, VDs = 0 V, Tj = 150 °C | – | 250 | |||||
| Drain-source on-state resistance | RDS(on) | VGs = 10 V | ID = 5.5 A 15 | – | – | 0.27 | Ω |
| Forward transconductance | gfs | VDs = 50 V, ID = 5.5 A 6 | 3. | – | S | ||
| Dynamic | |||||||
| Input capacitance | Ciss | VGs = 0 V, VDs = 25 V, f = 1. 0 MHz, . 5 see fig | 360 | pF | |||
| Output capacitance | Coss | 150 | |||||
| Reverse transfer capacitance | Crss | 34 | |||||
| Total gate charge | Qg | Ves = 10 V | ID = 9.2 A VDs= 80 , see fig. 6 and 13 by | 16 | nC | ||
| Gate-source charge | Qgs | 4. | |||||
| Gate-drain charge | Ogd | 8. | |||||
| Turn-on delay time | td(on) | VDD = 50 V, ID = 9.2 A, Rg = 18 (2, RD = 52 (2, see fig. 10 b | 9. | ns | |||
| Rise time | tr | – | 30 | i | |||
| Turn-off delay time | td(off) | – | 19 | – | |||
| Fall time | tf | – | 20 | – | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 1.0 | 5.0 | Ω | ||
| Internal drain inductance | 1-G | Between lead, 6 mm (0.25°) from package and center of die contact | – | 5. | – | nH | |
| Internal source inductance | LS | 75 | |||||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol showing the integral reverse p – n junction diode  | 92 | A | |||
| Pulsed diode forward current a | ISM | – | 37 | ||||
| Body diode voltage | VSD | Li = 25 °C, Is = 92 A, Vss = 0 V b | – | 2. | V | ||
| Body diode reverse recovery time | trr | Tj = 25 °C, IF = 9.2 A, dl/dt = 100 A/ps 6 | 110 | 260 | ns | ||
| Body diode reverse recovery charge | Orr | 0.53 | 1. | μC | |||
| Forward tum-on time | ton | Intrinsic tum-on time is negligible (turn-on is dominated by Ls and LD) | |||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91017.
Package Information
TO-220-1
| DIM. | MILLIMETERS | INCHES | ||
| MIN. | MAX. | MIN. | MAX. | |
| A | 4.24 | 4.65 | 0.167 | 0.183 |
| b | 0.69 | 1.02 | 0.027 | 0.040 |
| b(1) | 1.14 | 1.78 | 0.045 | 0.070 |
| c | 0.36 | 0.61 | 0.014 | 0.024 |
| D | 14.33 | 15.85 | 0.564 | 0.624 |
| E | 9.96 | 10.52 | 0.392 | 0.414 |
| e | 2.41 | 2.67 | 0.095 | 0.105 |
| e(1) | 4.88 | 5.28 | 0.192 | 0.208 |
| F | 1.14 | 1.40 | 0.045 | 0.055 |
| H(1) | 6.10 | 6.71 | 0.240 | 0.264 |
| J(1) | 2.41 | 2.92 | 0.095 | 0.115 |
| L | 13.36 | 14.40 | 0.526 | 0.567 |
| L(1) | 3.33 | 4.04 | 0.131 | 0.159 |
| Ø P | 3.53 | 3.94 | 0.139 | 0.155 |
| Q | 2.54 | 3.00 | 0.100 | 0.118 |
| ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 | ||||
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
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