Vishay Irfbg30 Power Mosfet Instruction Manual

IRFBG30 Power MOSFET
Instruction Manual

IRFBG30 Power MOSFET

PRODUCT SUMMARY

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
  
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12)
c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 pA			1000		–	V
VDS temperature coefficient	AVDs/T j	Reference to 25 °C, ID = 1 mA			–	1.	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 pA			2.0		4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V			–		± 100	nA
Zero gate voltage drain current	loss	VDS = 1000 V, VGS = 0 V				–	100	pA
		VDS = 800 V, VGS = 0 V, Tj = 125 °C					500
Drain-source on-state resistance	RDS(on)	Vcs = 10 V	I ID = 1.9 A b				5.0	S2
Forward transconductance	gls	VDS = 10 V, ID = 1.9 A b						S
Dynamic
Input capacitance	Ciss	Vcs = 0 V, VDS = 25 V, f = 1. 5 see fi 1.0 MHz, fig.			–	980		of
Output capacitance	Coss					140
Reverse transfer capacitance	Crss					50
Total gate charge	Qg	VGS = 10 V	ID = 3.1 A, VDS =400 V, see fig. 6 and 13 b				80	nC
Gate-source charge	Ogs						10
Gate-drain charge	Ogd					–	42
Turn-on delay time	td(on)	VDD = 500 V, ID = 3.1 A Ftg = 12 12, RD = 170 Q, see fig. 10 b				12
Rise time	tr					25
Turn-off delay time	td(oft)					89	_
Fall time						29	–
Gate input resistance	Fig	f = 1 MHz, open drain			0.-1		2.	52
Internal drain inductance	LD	Between lead, 6 mm (0.25′) from package and center die contact				5		nH
			of
Internal source inductance	Ls					8.
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	Is	MOSFET symbol showing the integral reverse			–	–	3.	A
			p – n junction diode
Pulsed diode forward current a	Ism				–	–	12
Body diode voltage	VsD	Tj = 25 °C, Is = 3.1 A, VGs=0Vb			–	–	2.	V
Body diode reverse recovery time	trr	Tj = 25 °C, IF = 3.1 A, dl/dt = 100 A/ps b			–	410	620	ns
Body diode reverse recovery charge	Qrr				–	1.	2.0	pC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91124.

Package Information

Vishay Siliconix TO-220-1

Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

Legal Disclaimer Notice Vishay
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2022 VISHAY INTERTECHNOLOGY, INC.
ALL RIGHTS RESERVED
Revision: 01-Jan-2022
Downloaded from Arrow.com.
Document Number: 91000

References

• applications.no
• vishay.com/doc?91000
• IRFBG30 Power MOSFET | Vishay