VISHAY IRLR110 Power Mosfet Instruction Manual
Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Surface-mount (IRLR110, SiHLR110)
- Straight lead (IRLU110, SiHLU110)
- Available in tape and reel
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation ower MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
| PRODUCT SUMMARY | ||
| VDS (V) | 100 | |
| RDS(on) (L) | VGS = 5.0 V | 0.54 |
| Qg (Max.) (nC) | 6.1 | |
| Qgs (nC) | 2.0 | |
| Qgd (nC) | 3.3 | |
| Configuration | Single | |
| ORDERING INFORMATION | ||||
| Package | DPAK (TO-252) | DPAK (TO-252) | DPAK (TO-252) | IPAK (TO-251) |
| Lead (Pb)-free and halogen-free | SiHLR110-GE3 | SiHLR110TR-GE3 | – | SiHLU110-GE3 |
| IRLR110PbF-BE3 | IRLR110TRPbF-BE3 | – | – | |
| Lead (Pb)-free | IRLR110PbF | IRLR110TRPbFa | IRLR110TRLPbF | IRLU110PbF |
Note
- See device orientation
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 100 | V | ||
| Gate-source voltage | VGS | ± 10 | |||
| Continuous drain current | VGS at 5 V | TC = 25 °C | ID | 4.3 | A |
| TC = 100 °C | 2.7 | ||||
| Pulsed drain current a | IDM | 17 | |||
| Linear derating factor | 0.20 | W/°C | |||
| Linear derating factor (PCB mount) e | 0.020 | ||||
| Single pulse avalanche energy b | EAS | 100 | mJ | ||
| Repetitive avalanche current a | IAR | 4.3 | A | ||
| Repetitive avalanche energy a | EAR | 2.5 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 25 | W | |
| Maximum power dissipation (PCB mount) e | TA = 25 °C | 2.5 | |||
| Peak diode recovery dV/dt c | dV/dt | 5.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 260 | |||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12)
- ISD ≤ 5.6 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
- When mounted on 1″ square PCB (FR-4 or G-10 material)
| THERMAL RESISTANCE RATINGS | |||||
| PARAMETER | SYMBOL | MIN. | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | – | 110 | °C/W |
| Maximum junction-to-ambient (PCB mount) a | RthJA | – | – | 50 | |
| Maximum junction-to-case (drain) | RthJC | – | – | 5.0 | |
Note
- When mounted on 1″ square PCB (FR-4 or G-10 material)
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | ||||||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | ||||
| Static | ||||||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 100 | – | – | V | ||||
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.12 | – | V/°C | ||||
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = – 250 μA | 1.0 | – | 2.0 | V | ||||
| Gate-source leakage | IGSS | VGS = ± 10 V | – | – | ± 100 | nA | ||||
| Zero gate voltage drain current | IDSS | VDS = 100 V, VGS = 0 V | – | – | 25 | μA | ||||
| VDS = 80 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | |||||||
| Drain-source on-state resistance | RDS(on) | VGS = 5.0 V | ID = 2.6 Ab | – | – | 0.54 | L | |||
| VGS = 4.0 V | ID = 2.2 Ab | – | – | 0.76 | ||||||
| Forward transconductance | gfs | VDS = 50 V, ID = 2.6 A | 2.3 | – | – | S | ||||
| Dynamic | ||||||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 | – | 250 | – | pF | ||||
| Output capacitance | Coss | – | 80 | – | ||||||
| Reverse transfer capacitance | Crss | – | 15 | – | ||||||
| Total gate charge | Qg | VGS = 5.0 V | ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b | – | – | 6.1 | nC | |||
| Gate-source charge | Qgs | – | – | 2.0 | ||||||
| Gate-drain charge | Qgd | – | – | 3.3 | ||||||
| Turn-on delay time | td(on) | VDD = 50 V, ID = 5.6 A, Rg = 12 L, RD = 8.4 L, see fig. 10b | – | 9.3 | – |
ns | ||||
| Rise time | tr | – | 47 | – | ||||||
| Turn-off delay time | td(off) | – | 16 | – | ||||||
| Fall time | tf | – | 17 | – | ||||||
| Internal drain inductance | LD | Between lead, 6 mm (0.25″) from package and center of die contactc |
G | D
S | – | 4.5 | – | nH | ||
| Internal source inductance | LS | – | 7.5 | – | ||||||
| Drain-Source Body Diode Characteristics | ||||||||||
| Continuous source-drain diode current | IS | MOSFET symbol showing the integral reverse p – n junction diode |
G |
D
S | – | – | 4.3 | A | ||
| Pulsed diode forward current a | ISM | – | – | 17 | ||||||
| Body diode voltage | VSD | TJ = 25 °C, IS =4.3 A, VGS = 0 Vb | – | – | 2.5 | V | ||||
| Body diode reverse recovery time | trr | TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb | – | 100 | 130 | ns | ||||
| Body diode reverse recovery charge | Qrr | – | 0.50 | 0.65 | μC | |||||
| Forward turn-on time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | ||||||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, TC = 25 °C
Fig. 2 – Typical Transfer Characteristics
Fig. 3 – Typical Output Characteristics, TC = 150 °C
Fig. 4 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Source-Drain Diode Forward Voltage
Fig. 5 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Maximum Safe Operating Area
Fig. 8 – Maximum Drain Current vs. Case Temperature
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 9 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
Fig. 10 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91323
TO-252AA Case Outline
| MILLIMETERS | ||
| DIM. | MIN. | MAX. |
| A | 2.18 | 2.38 |
| A1 | – | 0.127 |
| b | 0.64 | 0.88 |
| b2 | 0.76 | 1.14 |
| b3 | 4.95 | 5.46 |
| C | 0.46 | 0.61 |
| C2 | 0.46 | 0.89 |
| D | 5.97 | 6.22 |
| D1 | 4.10 | – |
| E | 6.35 | 6.73 |
| E1 | 4.32 | – |
| H | 9.40 | 10.41 |
| e | 2.28 BSC | |
| e1 | 4.56 BSC | |
| L | 1.40 | 1.78 |
| L3 | 0.89 | 1.27 |
| L4 | – | 1.02 |
| L5 | 1.01 | 1.52 |
Note
- Dimension L3 is for reference only
VERSION 2: FACILITY CODE = N
| MILLIMETERS | ||
| DIM. | MIN. | MAX. |
| A | 2.18 | 2.39 |
| A1 | – | 0.13 |
| b | 0.65 | 0.89 |
| b1 | 0.64 | 0.79 |
| b2 | 0.76 | 1.13 |
| b3 | 4.95 | 5.46 |
| c | 0.46 | 0.61 |
| c1 | 0.41 | 0.56 |
| c2 | 0.46 | 0.60 |
| D | 5.97 | 6.22 |
| D1 | 5.21 | – |
| E | 6.35 | 6.73 |
| E1 | 4.32 | – |
| e | 2.29 BSC | |
| H | 9.94 | 10.34 |
| MILLIMETERS | ||
| DIM. | MIN. | MAX. |
| L | 1.50 | 1.78 |
| L1 | 2.74 ref. | |
| L2 | 0.51 BSC | |
| L3 | 0.89 | 1.27 |
| L4 | – | 1.02 |
| L5 | 1.14 | 1.49 |
| L6 | 0.65 | 0.85 |
| q | 0° | 10° |
| q1 | 0° | 15° |
| q2 | 25° | 35° |
Notes
- Dimensioning and tolerance confirm to ASME Y14.5M-1994
- All dimensions are in millimeters. Angles are in degrees
- Heat sink side flash is max. 0.8 mm
- Radius on terminal is optional
Case Outline for TO-251AA (High Voltage)
OPTION 1:
| MILLIMETERS | INCHES | MILLIMETERS | INCHES | |||||||
| DIM. | MIN. | MAX. | MIN. | MAX. | DIM. | MIN. | MAX. | MIN. | MAX. | |
| A | 2.18 | 2.39 | 0.086 | 0.094 | D1 | 5.21 | – | 0.205 | – | |
| A1 | 0.89 | 1.14 | 0.035 | 0.045 | E | 6.35 | 6.73 | 0.250 | 0.265 | |
| b | 0.64 | 0.89 | 0.025 | 0.035 | E1 | 4.32 | – | 0.170 | – | |
| b1 | 0.65 | 0.79 | 0.026 | 0.031 | e | 2.29 BSC | 2.29 BSC | |||
| b2 | 0.76 | 1.14 | 0.030 | 0.045 | L | 8.89 | 9.65 | 0.350 | 0.380 | |
| b3 | 0.76 | 1.04 | 0.030 | 0.041 | L1 | 1.91 | 2.29 | 0.075 | 0.090 | |
| b4 | 4.95 | 5.46 | 0.195 | 0.215 | L2 | 0.89 | 1.27 | 0.035 | 0.050 | |
| c | 0.46 | 0.61 | 0.018 | 0.024 | L3 | 1.14 | 1.52 | 0.045 | 0.060 | |
| c1 | 0.41 | 0.56 | 0.016 | 0.022 | q1 | 0′ | 15′ | 0′ | 15′ | |
| c2 | 0.46 | 0.86 | 0.018 | 0.034 | q2 | 25′ | 35′ | 25′ | 35′ | |
| D | 5.97 | 6.22 | 0.235 | 0.245 | ||||||
| ECN: E21-0605-Rev. B, 25-Oct-2021 DWG: 5968 | ||||||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimension are shown in inches and millimeters
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions b4, L2, E1 and D1
- Lead dimension uncontrolled in L3
- Dimension b1, b3 and c1 apply to base metal only
- Outline conforms to JEDEC® outline TO-251AA
OPTION 2: FACILITY CODE = N
| DIM. | MIN. | MAX. | MAX. | DIM. | MIN. | MAX. | MAX. | |
| A | 2.180 | 2.285 | 2.390 | D2 | 5.380 | – | – | |
| A1 | 0.890 | 1.015 | 1.140 | E | 6.350 | 6.540 | 6.730 | |
| b | 0.640 | 0.765 | 0.890 | E1 | 4.32 | – | – | |
| b1 | 0.640 | 0.715 | 0.790 | e | 2.29 BSC | |||
| b2 | 0.760 | 0.950 | 1.140 | L | 8.890 | 9.270 | 9.650 | |
| b3 | 0.760 | 0.900 | 1.040 | L1 | 1.910 | 2.100 | 2.290 | |
| b4 | 4.950 | 5.205 | 5.460 | L2 | 0.890 | 1.080 | 1.270 | |
| c | 0.460 | – | 0.610 | L3 | 1.140 | 1.330 | 1.520 | |
| c1 | 0.410 | – | 0.560 | L4 | 1.300 | 1.400 | 1.500 | |
| c2 | 0.460 | – | 0.610 | q1 | 0° | 7.5° | 15° | |
| D | 5.970 | 6.095 | 6.220 | q2 | 4° | – | – | |
| D1 | 4.300 | – | – | |||||
| ECN: E21-0605-Rev. B, 25-Oct-2021 DWG: 5968 | ||||||||
Notes
- Dimensioning and tolerancing per ASME 5M-1994
- All dimension are in millimeters, angles are in degrees
- Heat sink side flash is 0.8 mm
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Disclaimer
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