VISHAY IRFD9110 Power MOSFET
VISHAY IRFD9110 Power MOSFET
Product Information
- VDS (V): -100
- RDS(on) (): 1.2
- Qg (Max.) (nC): 8.7
- Qgs (nC): 2.2
- Qgd (nC): 4.1
- Configuration: Single
- Package Type: HVMDIP
- P-Channel MOSFET
Product Usage Instructions
of 120°C/W.
- Static Drain-Source Breakdown Voltage VDS
- Temperature Coefficient VDS/TJ
- Gate-Source Threshold Voltage VGS(th)
- Gate-Source Leakage IGSS
- Zero Gate Voltage Drain Current IDSS
- Drain-Source On-State Resistance RDS(on)
- Forward Transconductance gfs
- Input Capacitance Ciss
- Output Capacitance Coss
- Reverse Transfer Capacitance Crss
- Total Gate Charge Qg
- Gate-Source Charge Qgs
- Gate-Drain Charge Qgd
- Turn-On Delay Time td(on)
- Rise Time tr
- Turn-Off Delay Time td(off)
- Fall Time tf
- Internal Drain Inductance LD
- Internal Source Inductance LS
- Continuous Source-Drain Diode Current IS
- Pulsed Diode Forward Current ISM
- Body Diode Voltage VSD
- Body Diode Reverse Recovery Time trr
- Body Diode Reverse Recovery Charge Qrr
Please refer to the product manual for test conditions and limits.
PRODUCT SUMMARY
| PRODUCT SUMMARY | ||
| VDS (V) | -100 | |
| RDS(on) (Ù) | VGS = -10 V | 1.2 |
| Qg (Max.) (nC) | 8.7 | |
| Qgs (nC) | 2.2 | |
| Qgd (nC) | 4.1 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- P-channel
- Fast switching
- 175 °C operating temperature
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-inserted le case style that can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
| ORDERING INFORMATION | |
| Package | HVMDIP |
| Lead (Pb)-free | IRFD9110PbF |
| ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | -100 | V | ||
| Gate-source voltage | VGS | ± 20 | |||
| Continuous drain current | VGS at -10 V | TA = 25 °C | ID | -0.70 | A |
| TA = 100 °C | -0.49 | ||||
| Pulsed drain current a | IDM | -5.6 | |||
| Linear derating factor | 0.0083 | W/°C | |||
| Single pulse avalanche energy b | EAS | 140 | MJ | ||
| Repetitive avalanche current a | IAR | -0.7 | A | ||
| Repetitive avalanche energy a | EAR | 0.13 | MJ | ||
| Maximum power dissipation | TA = 25 °C | PD | 1.3 | W | |
| Peak diode recovery dv/dt c | dV/dt | -5.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to + 175 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 300d | |||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = -25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = -2.0 A (see fig. 12)
- ISD ≤ -4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | RthJA | – | 120 | °C/W |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 μA | -100 | – | – | V | |
| VDS Temperature Coefficient | ÄVDS/TJ | Reference to 25 °C, ID = -1 mA | – | -0.091 | – | V/°C | |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 μA | -2.0 | – | -4.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -100 V, VGS = 0 V | – | – | -100 | μA | |
| VDS = -80 V, VGS = 0 V, TJ = 150 °C | – | – | -500 | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V | ID = -0.42 Ab | – | – | 1.2 | Ù |
| Forward Transconductance | gfs | VDS = -50 V, ID = -0.42 A | 0.60 | – | – | S | |
| Dynamic | |||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 | – | 200 | – | pF | |
| Output Capacitance | Coss | – | 94 | – | |||
| Reverse Transfer Capacitance | Cross | – | 18 | – | |||
| Total Gate Charge | Qg | VGS = -10 V | ID = -4.0 A, VDS = -80 V see fig. 6 and 13b | – | – | 8.7 |
nC |
| Gate-Source Charge | Qgs | – | – | 2.2 | |||
| Gate-Drain Charge | Qgd | – | – | 4.1 | |||
| Turn-On Delay Time | td(on) | VDD = -50 V, ID = -4.0 A Rg = 24 Ù, RD = 11 Ù, see fig. 10b | – | 10 | – |
ns | |
| Rise Time | tr | – | 27 | – | |||
| Turn-Off Delay Time | td(off) | – | 15 | – | |||
| Fall Time | tf | – | 17 | – | |||
| Internal Drain Inductance | LD | Between lead, D 6 mm (0.25″) from package and center of G die contact S | – | 4.0 | – |
nH | |
| Internal Source Inductance | LS | – | 6.0 | – | |||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Source-Drain Diode Current | IS | MOSFET symbol D showing the integral reverse G p – n junction diode S | – | – | -0.70 | A | |
| Pulsed Diode Forward Current | ISM | – | – | -5.6 | |||
| Body Diode Voltage | VSD | TJ = 25 °C, IS = -0.7 A, VGS = 0 Vb | – | – | -5.5 | V | |
| Body Diode Reverse Recovery Time | trr | TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μsb | – | 82 | 160 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | – | 0.15 | 0.30 | μC | ||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Package Information
HVM DIP (High voltage) 
| INCHES | MILLIMETERS | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| A | 0.310 | 0.330 | 7.87 | 8.38 |
| E | 0.300 | 0.425 | 7.62 | 10.79 |
| L | 0.270 | 0.290 | 6.86 | 7.36 |
| ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 | ||||
Disclaimer
ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
applications.no
IRFD9110 Power MOSFET | Vishay
