IRL510, SiHL510
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 100 | |
| RDS(on) (L) | VGS = 5.0 V | 0.54 |
| Qg (Max.) (NC) | 6.1 | |
| Qgs (NC) | 2.6 | |
| QGD (NC) | 3.3 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRL510PbF |
| SiHL510-E3 | |
| SnPb | IRL510 |
| SiHL510 | |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ± 10 | |||
| Continuous Drain Current | VGS at 5 V | TC = 25 °C | ID | 5.6 | A |
| TC = 100 °C | 4.0 | ||||
| Pulsed Drain Current | ITEM | 18 | |||
| Linear Derating Factor | 0.29 | W/°C | |||
| Single Pulse Avalanche Energy | EAS | 100 | MJ | ||
| Repetitive Avalanche Current | IAR | 5.6 | A | ||
| Repetitive Avalanche Energy | EAR | 4.3 | MJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 43 | W | |
| Peak Diode Recovery dv/DTC | DV/DT | 5.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | – 55 to + 175 | °C | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300d | |||
| Mounting Torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from the case.
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | that | – | 62 | °C/W |
| Case-to-Sink, Flat, Greased Surface | RCS | 0.50 | – | |
| Maximum Junction-to-Case (Drain) | RthJC | – | 3.5 |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | ||
| Static | ||||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 pA | 100 | – | – | V | ||
| DVDs Temperature Coefficient | AVDs/Ti | Reference to 25 °C, ID = 1 mA | – | 0.12 | – | V/°C | ||
| Gate-Source Threshold Voltage | vision) | Nips = V05, ID = 250 pA | 1.0 | – | 2.0 | V | ||
| Gate-Source Leakage | IGSS | V05 = ± 10 V | – | ± 100 | nA | |||
| Zero Gate Voltage Drain Current | loss | Nips = 100 M, Nips = 0 N., | – | 25 | pA | |||
| \fps = 80 V, VGs = 0 M, Tj = 150 °C | – | – | 250 | |||||
| Drain-Source On-State Resistance | we | M65 = 5.0 V | ID = 3.4 Ab | – | 0.54 | (2 | ||
| VGs = 4.0 V | ID = 2.8 Ab | – | 0.76 | |||||
| Forward Transconductance | Ors | \fps = 50 V, 1D = 3.4 Ab | 2. | – | – | S | ||
| Dynamic | ||||||||
| Input Capacitance | C,,,s | VDS = 0 V, Mots = 25 V, f = 1.0 MHz, see fig. 5 | 250 | – | pF | |||
| Output Capacitance | Coss | 80 | – | |||||
| Reverse Transfer Capacitance | Crss | 15 | – | |||||
| Total Gate Charge | Qg | VGS = 5.0 V | ID Mse = 80 see fig. 6 and 13b V | – | 6. | ‘2 | ||
| Gate-Source Charge | Qgs | – 2.6 | ||||||
| Gate-Drain Charge | Ogd | – | – | 3. | ||||
| Turn-On Delay Time | talon) | VDD = 50 V, ID = 5.6 A Rg = 12 S2, RD= 8.4 (1 see fig. 10b | 9. | ns | ||||
| Rise Time | t, | 4/ | ||||||
| Tum-Off Delay Time | tam° | 16 | ||||||
| Fall Time | t1 | 18 | ||||||
| Internal Drain Inductance | LD |  Between lead,6 mm (0.25′) from package and center of die contact | 45 | |||||
| Internal Source Inductance | Ls | n[i | 8. | |||||
| Drain-Source Body Diode Characteristics | ||||||||
| Continuous Source-Drain Diode Current | Is | MOSFET symbol showing thers integral reverse .0 p – n junction diode | 6. | A | ||||
| Pulsed Diode Forward Currents | Ism | 18 | ||||||
| Body Diode Voltage | VSD | Tj = 25 °C, Is = 5.6 A, M05 = 0 Mb | – | – | 3. | V | ||
| Body Diode Reverse Recovery Time | In | Tj = 25 °C, IF = 5.6 A, DVDs = 100 A/psb | 110 | 130 | ns | |||
| Body Diode Reverse Recovery Charge | ()„ | 0.50 | 0.65 | PC | ||||
| Forward Turn-On Time | to, | Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS | ||||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
 |  |
 |  |
 |  |
| DIM. | MILLIMETERS | INCHES | ||
| MIN. | MAX. | MIN. | MAX. | |
| A | 4.24 | 4.65 | 0.167 | 0.183 |
| b | 0.69 | 1.02 | 0.027 | 0.040 |
| b(1) | 1.14 | 1.78 | 0.045 | 0.070 |
| c | 0.36 | 0.61 | 0.014 | 0.024 |
| D | 14.33 | 15.85 | 0.564 | 0.624 |
| E | 9.96 | 10.52 | 0.392 | 0.414 |
| e | 2.41 | 2.67 | 0.095 | 0.105 |
| e(1) | 4.88 | 5.28 | 0.192 | 0.208 |
| F | 1.14 | 1.40 | 0.045 | 0.055 |
| H(1) | 6.10 | 6.71 | 0.240 | 0.264 |
| J(1) | 2.41 | 2.92 | 0.095 | 0.115 |
| L | 13.36 | 14.40 | 0.526 | 0.567 |
| L(1) | 3.33 | 4.04 | 0.131 | 0.159 |
| Ø P | 3.53 | 3.94 | 0.139 | 0.155 |
| Q | 2.54 | 3.00 | 0.100 | 0.118 |
| ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 | ||||
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* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91297
www.vishay.com
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Revision: 09-Jul-2021
Document Number: 91000
Vishay Intertechnology
