Vishay Irfr310 Power Mosfet Owner's Manual

IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET

IRFR310 Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR310, SiHFR310)
• Straight lead (IRFU310, SiHFU310)
• Available in tape and reel
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

Note
a. See device orientation

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = 1.7 A (see fig. 12)
c. ISD ≤ 1.7 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1” square PCB (FR-4 or G-10 material)

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA		400	–	–	V
VDS temperature coefficient	DVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.47	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 400 V, VGS = 0 V		–	–	25	μA
		VDS = 320 V, VGS = 0 V, TJ = 125 °C		–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 1.0 A b	–	–	3.6	L
Forward transconductance	gfs	VDS = 50 V, ID = 1.0 A b		0.97	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 c		–	170	–	pF
Output capacitance	Coss			–	34	–
Reverse transfer capacitance	Crss			–	6.3	–
Total gate charge	Qg	VGS = 10 V	ID = 2.0 A, VDS = 320 V, see fig. 6 and 13 b, c	–	–	12	nC
Gate-source charge	Qgs			–	–	1.9
Gate-drain charge	Qgd			–	–	6.5
Turn-on delay time	td(on)	VDD = 200 V, ID = 2.0 A, Rg = 24 L, RD = 95 Ω, see fig. 10 b, c		–	7.9	–	ns
Rise time	tr			–	9.9	–
Turn-off delay time	td(off)			–	21	–
Fall time	tf			–	11	–
Gate input resistance	Rg	f = 1 MHz, open drain		1.7	–	11.2	L
Internal drain inductance	LD	Between lead, 6 mm (0.25″) from package and center of die contact		–	4.5	–	nH
Internal source inductance	LS			–	7.5	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol showing the integral reverse p – n junction diode		–	–	1.7	A
Pulsed diode forward current a	ISM			–	–	6.0
Body diode voltage	VSD	TJ = 25 °C, IS = 1.7 A, VGS = 0 V b		–	–	1.6	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs b		–	240	540	ns
Body diode reverse recovery charge	Qrr			–	0.85	1.6	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91272.

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

Note
• Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

Notes

• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimension are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

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Revision: 01-Jan-2023
www.vishay.com
Revision: 21-Jan-08

References

• applications.no
• vishay.com/doc?91000
• IRFR310, IRFU310, SiHFR310, SiHFU310 Power MOSFET | Vishay