Vishay Irfp244 Power Mosfet Owner's Manual

VISHAY IRFP244 Power MOSFET 

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 3.9 mH, Rg = 25 Ω, IAS = 15 A (see fig. 12)
c. ISD ≤ 15 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA		250	–	–	V
VDS temperature coefficient	ÄVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.37	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 250 V, VGS = 0 V		–	–	25	μA
		VDS = 200 V, VGS = 0 V, TJ = 125 °C		–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 9.0 A b	–	–	0.28	Ù
Forward transconductance	gfs	VDS = 50 V, ID = 9.0 A b		6.7	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5		–	1400	–	pF
Output capacitance	Coss			–	320	–
Reverse transfer capacitance	Crss			–	73	–
Total gate charge	Qg	VGS = 10 V	ID = 11 A, VDS = 200 V, see fig. 6 and 13 b	–	–	63	nC
Gate-source charge	Qgs			–	–	12
Gate-drain charge	Qgd			–	–	39
Turn-on delay time	td(on)	VDD = 125 V, ID = 11 A , Rg = 9.1 Ù, RD = 11 Ù, see fig. 10 b		–	14	–	ns
Rise time	tr			–	49	–
Turn-off delay time	td(off)			–	42	–
Fall time	tf			–	24	–
Internal drain inductance	LD	Between lead, 6 mm (0.25″) from package and center of die contact		–	5.0	–	nH
Internal source inductance	LS			–	13	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol showing the integral reverse p – n junction diode		–	–	15	A
Pulsed diode forward current a	ISM			–	–	60
Body diode voltage	VSD	TJ = 25 °C, IS = 15 A, VGS = 0 V b		–	–	1.8	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μs b		–	290	570	ns
Body diode reverse recovery charge	Qrr			–	3.1	6.3	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91211

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimension b2 and b4 does not include dam bar protrusion. Allowable dam bar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed
   0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

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References

• applications.no
• vishay.com/doc?91000
• IRFP244 Power MOSFET | Vishay