Vishay Irfpf50pbf Power Mosfet Owner's Manual

IRFPF50PbF Power MOSFET
Owner’s Manual

IRFPF50, SiHFPF50
Vishay Silicone

IRFPF50PbF Power MOSFET

Power MOSFET

FEATURES

• Dynamic dB/dt. Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but  superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 37 MH, Rig = 25 Ω, IAS = 6.7 A (see fig. 12).
c. ISD ≤ 6.7 A, dI/dt. ≤ 130 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Vishay Silicone

SPECIFICATIONS (1) = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 PA		900	–	–	V
VDs Temperature Coefficient	AVDs/11,1	Reference to 25 °C, ID = 1 mA			12	–	V/°C
Gate-Source Threshold Voltage	V6 1.0	\les = VGS, ID = 250 PA		2.0	–	4.0	V
Gate-Source Leakage	IGSS	VGS = t 20 V				± 100	nab
Zero Gate Voltage Drain Current	ID’s	VDs= 900 V,VGs= 0 V			–	100	PA
		VDs = 720 V, VDs = 0 V, Taj = 125 °C				500
Drain-Source On-State Resistance	R moil	VGS = 10 V	ID = 4.0 Ab		–	2.	0
Forward Transconductance	Offs	Nips = 100 V, ID = 4.0 Ab		5.	–	–	S
Dynamic
Input Capacitance	Gas	VGs = 0 V, VDG = 25 V, f = 1.0 MHz, see fig. 5		–	2900	–	pF
Output Capacitance	Costs				270	–
Reverse Transfer Capacitance	C«				92	–
Total Gate Charge	9	VGS = 10 V	ID = 6.7 A, VDS = 360 V, see fig. 6 and 13b		–	200	nC
Gate-Source Charge	Qgs				–	24
Gate-Drain Charge	Q gd					110
Tum-On Delay Time	td(on)	V DD = 450 V, ID= 6.7 A , RG = 6.212, RD = 6712, see fig. 10ID			20	–	2
Rise Time	tr
Turn-Off Delay Time	td(off				130
Fall Time	ft				37
Internal Drain Inductance	LD	Between lead,6 mm (0.25″) from package and center of die contact			5.0		nH
Internal Source Inductance	Ls				13	–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	Is	MOSFET  symbol showing theintegral reverse p – n junction diode		–	–	6.7	A
Pulsed Diode Forward Currents	ism			–	–	27
Body Diode Voltage	VSD	Taj = 25 °C, Is = 6.7 A VGS = 0 Vb		–	–	1.8	V
Body Diode Reverse Recovery Time	torr	Taj = 25 °C, IF = 6.7 A, dl/dt. = 100 A/pub		–	610	920	ns
Body Diode Reverse Recovery Charge	Qtr.			–	3.2	4.8	µC
Forward Tum-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by Ls and Lo)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Silicone maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and  Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91251.

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

Notes

1. Package reference: JEDEC ® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimension b2 and b4 does not include dam bar protrusion. Allowable dam bar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Antitechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors,  inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To  the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including  without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay  products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to  validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and  / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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Revision: 19-Oct-2020
Document Number: 91360
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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References

• Vishay Intertechnology
• vishay.com/doc?91000
• IRFPF50 Power MOSFET | Vishay