Vishay Irf740b D Series Power Mosfet Owner's Manual

Vishay Irf740b D Series Power Mosfet Owner's Manual

VISHAY IRF740B D Series Power MOSFET Owner’s Manual
VISHAY IRF740B D Series Power MOSFET

PRODUCT SUMMARY
VDS (V) at TJ max.450
RDS(on) max. (W) at 25 °CVGS = 10 V0.6
Qg max. (nC)30
Qgs (nC)4
Qgd (nC)7
ConfigurationSingle

 

OVERVIEWOVERVIEW

FEATURES

  • Optimal design
    • Low area specific on-resistance
    • Low input capacitance (Ciss)
    • Reduced capacitive switching losses
    • High body diode ruggedness
    • Avalanche energy rated (UIS)
  • Optimal efficiency and operation
    • Low cost
    • Simple gate drive circuitry
    • Low figure-of-merit (FOM): Ron x Qg
    • Fast switching
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

APPLICATIONS

  • Consumer electronics
    • Displays (LCD or plasma TV)
  • Server and telecom power supplies
    • SMPS
  • Industrial
    • Welding
    • Induction heating
    • Motor drives
  • Battery chargers
ORDERING INFORMATION
PackageTO-220AB
Lead (Pb)-freeIRF740BPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETERSYMBOLLIMITUNIT
Drain-Source VoltageVDS400V
Gate-Source VoltageVGS± 30
Gate-Source Voltage AC (f > 1 Hz)30
Continuous Drain Current (TJ = 150 °C)VGS at 10 VTC = 25 °CID10A
TC = 100 °C6
Pulsed Drain Current aIDM23
Linear Derating Factor1.2W/°C
Single Pulse Avalanche Energy bEAS194mJ
Maximum Power DissipationPD147W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +150°C
Drain-Source Voltage SlopeTJ = 125 °CdV/dt24V/ns
Reverse Diode dV/dt d0.6
Soldering Recommendations (Peak temperature) cfor 10 s300°C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 13 A.
c. 1.6 mm from case.
d. ISD  ID, starting TJ = 25 °C.

THERMAL RESISTANCE RATINGS
PARAMETERSYMBOLTYP.MAX.UNIT
Maximum Junction-to-AmbientRthJA62°C/W
Maximum Junction-to-Case (Drain)RthJC0.85
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 μA400V
VDS Temperature CoefficientDVDS/TJReference to 25 °C, ID = 250 μA0.53V/°C
Gate-Source Threshold Voltage (N)VGS(th)VDS = VGS, ID = 250 μA35V
Gate-Source LeakageIGSSVGS = ± 30 V± 100nA
Zero Gate Voltage Drain CurrentIDSSVDS = 400 V, VGS = 0 V1μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C10
Drain-Source On-State ResistanceRDS(on)VGS = 10 VID = 5 A0.50.6W
Forward TransconductancegfsVDS = 50 V, ID = 5 A2.7S
Dynamic
Input CapacitanceCissVGS = 0 V, VDS = 100 V,f = 1 MHz526

pF

Output CapacitanceCoss59
Reverse Transfer CapacitanceCrss9
Effective Output Capacitance, Energy Related aCo(er)VGS = 0 V, VDS = 0 V to 320 V66
Effective Output Capacitance, Time Related bCo(tr)84
Total Gate ChargeQgVGS = 10 VID = 5 A, VDS = 320 V1530nC
Gate-Source ChargeQgs4
Gate-Drain ChargeQgd7
Turn-On Delay Timetd(on)VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 W1224

ns

Rise Timetr1836
Turn-Off Delay Timetd(off)1836
Fall Timetf1428
Gate Input ResistanceRgf = 1 MHz, open drain0.91.83.6W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode CurrentISMOSFET symbolDshowing theintegral reverse                   Gp – n junction diode                        S10A
Pulsed Diode Forward CurrentISM40
Diode Forward VoltageVSDTJ = 25 °C, IS = 5 A, VGS = 0 V1.2V
Reverse Recovery TimetrrTJ = 25 °C, IF = IS = 5 A,dI/dt = 100 A/μs, V  = 25 VR230ns
Reverse Recovery ChargeQrr1.6μC
Reverse Recovery CurrentIRRM14A

Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics

DIAGRAM

Fig. 2 – Typical Output Characteristics

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Fig. 3 – Typical Transfer Characteristics

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Fig. 4 – Normalized On-Resistance vs. Temperature

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Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

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Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

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Fig. 7 – Typical Source-Drain Diode Forward Voltage

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Fig. 8 – Maximum Safe Operating Area

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Fig. 9 – Maximum Drain Current vs. Case Temperature

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Fig. 10 – Temperature vs. Drain-to-Source Voltage

DIAGRAM

Fig. 11 – Normalized Thermal Transient Impedance, Junction-to-Case

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Fig. 12 – Switching Time Test Circuit

DIAGRAM

Fig. 13 – Switching Time Waveforms

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Fig. 14 – Unclamped Inductive Test Circuit

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Fig. 15 – Unclamped Inductive Waveforms

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Fig. 16 – Basic Gate Charge Waveform

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Fig. 17 – Gate Charge Test Circuit

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Fig. 18 – For N-Channel

DIAGRAM

DIAGRAM

DIAGRAM

DIM.MILLIMETERSINCHES
MIN.MAX.MIN.MAX.
A4.244.650.1670.183
b0.691.020.0270.040
b(1)1.141.780.0450.070
c0.360.610.0140.024
D14.3315.850.5640.624
E9.9610.520.3920.414
e2.412.670.0950.105
e(1)4.885.280.1920.208
F1.141.400.0450.055
H(1)6.106.710.2400.264
J(1)2.412.920.0950.115
L13.3614.400.5260.567
L(1)3.334.040.1310.159
Ø P3.533.940.1390.155
Q2.543.000.1000.118
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay prod uct could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

References

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