VISHAY IRFZ44 Power Mosfet
Product Information
- Product Name: Power MOSFET
- Model Numbers: IRFZ44, SiHFZ44
- Manufacturer: Vishay Siliconix
Description
The IRFZ44 and SiHFZ44 are third-generation Power MOSFETs from Vishay Siliconix. These MOSFETs offer fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is widely preferred for commercial-industrial applications with power dissipation levels up to approximately 50 W. The TO-220AB package has low thermal resistance and low cost, making it widely accepted in the industry.
Thermal Resistance Ratings
- Maximum Junction-to-Ambient (RthJA): 62
- Case-to-Sink, Flat, Greased Surface (RthCS): 0.50
- Maximum Junction-to-Case (Drain) (RthJC): 1.0
Product Usage Instructions
- Ensure that the drain-source voltage (VDS) does not exceed 60V.
- Connect the gate-source voltage (VGS) to a 10V power source.
- Make sure the drain current (ID) does not exceed the continuous or pulsed drain current limits.
- Consider the linear derating factor for the maximum power dissipation.
- Observe the operating junction and storage temperature range (-55°C to +175°C).
- Follow the recommended soldering temperature for 10 seconds.
- Use a 6-32 or M3 screw for mounting, applying the appropriate mounting torque.
PRODUCT SUMMARY
| PRODUCT SUMMARY | ||
| VDS (V) | 60 | |
| RDS(on) (W) | VGS = 10 V | 0.028 |
| Qg (Max.) (nC) | 67 | |
| Qgs (nC) | 18 | |
| Qgd (nC) | 25 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt Rating
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contributes to its wide acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
| Lead (Pb)-free | IRFZ44PbF |
| SiHFZ44-E3 | |
| SnPb | IRFZ44 |
| SiHFZ44 |
ABSOLUTE MAXIMUM RATINGS
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 60 | V | ||
| Gate-Source Voltage | VGS | ± 20 | |||
| Continuous Drain Current | VGS at 10 V | TC = 25 °C | ID | 50 | A |
| Continuous Drain Current | TC = 100 °C | 36 | |||
| Pulsed Drain Current a | IDM | 200 | |||
| Linear Derating Factor | 1.0 | W/°C | |||
| Single Pulse Avalanche Energy b | EAS | 100 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 150 | W | |
| Peak Diode Recovery dV/dtc | dV/dt | 4.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | – 55 to + 175 | °C | ||
| Soldering Recommendations (Peak Temperature)d | for 10 s | 300 | |||
| Mounting Torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
- ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
- 1.6 mm from case.
- Current limited by the package, (die current = 51 A).
Pb containing terminations are not RoHS compliant, exemptions may apply
THERMAL RESISTANCE RATINGS
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | RthJA | – | 62 | °C/W |
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.50 | – | |
| Maximum Junction-to-Case (Drain) | RthJC | – | 1.0 | |
SPECIFICATIONS
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 μA | 60 | – | – | V | |
| VDS Temperature Coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.060 | – | V/°C | |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | – | 4.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | – | – | 25 | μA | |
| VDS = 48 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V | ID = 31 Ab | – | – | 0.028 | W |
| Forward Transconductance | gfs | VDS = 25 V, ID = 31 A | 15 | – | – | S | |
| Dynamic | |||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 | – | 1900 | – | pF | |
| Output Capacitance | Coss | – | 920 | – | |||
| Reverse Transfer Capacitance | Crss | – | 170 | – | |||
| Total Gate Charge | Qg | VGS = 10 V | ID = 51 A, VDS = 48 V, see fig. 6 and 13b | – | – | 67 |
nC |
| Gate-Source Charge | Qgs | – | – | 18 | |||
| Gate-Drain Charge | Qgd | – | – | 25 | |||
| Turn-On Delay Time | td(on) | VDD = 30 V, ID = 51 A, Rg = 9.1 W, RD = 0.55 W, see fig. 10b | – | 14 | – |
ns | |
| Rise Time | tr | – | 110 | – | |||
| Turn-Off Delay Time | td(off) | – | 45 | – | |||
| Fall Time | tf | – | 92 | – | |||
| Internal Drain Inductance | LD | Between lead, 6 mm (0.25″) from package and center of die contact
| – | 4.5 | – |
nH | |
| Internal Source Inductance | LS | – | 7.5 | – | |||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Source-Drain Diode Current | IS | MOSFET symbol showing the integral reverse p – n junction diode
| – | – | 50 | A | |
| Pulsed Diode Forward Currenta | ISM | – | – | 200 | |||
| Body Diode Voltage | VSD | TJ = 25 °C, IS = 51 A, VGS = 0 Vb | – | – | 2.5 | V | |
| Body Diode Reverse Recovery Time | trr | TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ms | – | 120 | 180 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | – | 0.53 | 0.80 | nC | ||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91291.
TO-220-1
| DIM. | MILLIMETERS | INCHES | ||
| MIN. | MAX. | MIN. | MAX. | |
| A | 4.24 | 4.65 | 0.167 | 0.183 |
| b | 0.69 | 1.02 | 0.027 | 0.040 |
| b(1) | 1.14 | 1.78 | 0.045 | 0.070 |
| c | 0.36 | 0.61 | 0.014 | 0.024 |
| D | 14.33 | 15.85 | 0.564 | 0.624 |
| E | 9.96 | 10.52 | 0.392 | 0.414 |
| e | 2.41 | 2.67 | 0.095 | 0.105 |
| e(1) | 4.88 | 5.28 | 0.192 | 0.208 |
| F | 1.14 | 1.40 | 0.045 | 0.055 |
| H(1) | 6.10 | 6.71 | 0.240 | 0.264 |
| J(1) | 2.41 | 2.92 | 0.095 | 0.115 |
| L | 13.36 | 14.40 | 0.526 | 0.567 |
| L(1) | 3.33 | 4.04 | 0.131 | 0.159 |
| Ø P | 3.53 | 3.94 | 0.139 | 0.155 |
| Q | 2.54 | 3.00 | 0.100 | 0.118 |
| ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 | ||||
Note: M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM.
Package Picture
Disclaimer
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