Vishay Irf740as Power Mosfet Owner's Manual

Vishay Irf740as Power Mosfet Owner's Manual

VISHAY IRF740AS Power MOSFET-logo

VISHAY IRF740AS Power MOSFET

VISHAY IRF740AS Power MOSFET-product

Power MOSFETVISHAY IRF740AS Power MOSFET-fig-1

FEATURES

  • Low gate charge Qg results in cimple drive requirement
  • Improved gate, avalanche, and dynamic dV/d t ruggedness
  • Fully characterized capacitance and avalanch e voltage and current
  • Effective Coss specified
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
    Note
    • This datasheet provides information about parts that RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

APPLICATIONS

  • Switch mode power supply (SMPS)
  • Uninterruptible power supply
  • High speed power switching

TYPICAL SMPS TOPOLOGIES

  • Single transistor flyback Xfmr. reset
  • Single transistor forward Xfmr. reset (both for US line input only)

PRODUCT SUMMARY

ORDERING INFORMATION

ORDERING INFORMATION
PackageD2PAK (TO-263)D2PAK (TO-263)D2PAK (TO-263)I2PAK (TO-262)
Lead (Pb)-free and Halogen-freeSiHF740AS-GE3SiHF740ASTRL-GE3aSiHF740ASTRR-GE3aSiHF740AL-GE3
Lead (Pb)-freeIRF740ASPbFIRF740ASTRLPbFaIRF740ASTRRPbFaIRF740ALPbF

Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETERSYMBOLLIMITUNIT
Drain-Source VoltageVDS400V
Gate-Source VoltageVGS± 30
Continuous Drain CurrenteVGS at 10 VTC = 25 °CID10 

A

TC = 100 °C6.3
Pulsed Drain Currenta, eIDM40
Linear Derating Factor 1.0W/°C
Single Pulse Avalanche Energyb, eEAS630mJ
Avalanche CurrentaIAR10A
Repetiitive Avalanche EnergyaEAR12.5mJ
Maximum Power DissipationTA = 25 °CPD3.1W
TC = 25 °C125
Peak Diode Recovery dV/dtc, edV/dt5.9V/ns
Operating Junction and Storage Temperature RangeTJ, Tstg– 55 to + 150°C
Soldering Recommendations (Peak Temperature)for 10 s 300d

Notes

  • Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
  • ISD ≤ 10 A, dI/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
  • 1.6 mm from case
  • Uses IRF740A, SiHF740A data and test conditions

THERMAL RESISTANCE RATINGSVISHAY IRF740AS Power MOSFET-fig-2

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material).VISHAY IRF740AS Power MOSFET-fig-3

Notes

  • Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
  • Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
  • Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
  • Uses IRF740A, SiHF740A data and test conditions.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)VISHAY IRF740AS Power MOSFET-fig-4VISHAY IRF740AS Power MOSFET-fig-5VISHAY IRF740AS Power MOSFET-fig-6VISHAY IRF740AS Power MOSFET-fig-7VISHAY IRF740AS Power MOSFET-fig-8

Peak Diode Recovery dV/dt Test CircuitVISHAY IRF740AS Power MOSFET-fig-9

Note
a. VGS = 5 V for logic level devices

TO-263AB (HIGH VOLTAGE)VISHAY IRF740AS Power MOSFET-fig-10-

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. Dimensions are shown in millimeters (inches).
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
  4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
  5. Dimension b1 and c1 apply to base metal only.
  6. Datum A and B to be determined at datum plane H.
  7. Outline conforms to JEDEC outline to TO-263AB.
I2PAK (TO-262) (HIGH VOLTAGE)VISHAY IRF740AS Power MOSFET-fig-11

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
  3. Thermal pad contour optional within dimension E, L1, D1, and E1.
  4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-LeadVISHAY IRF740AS Power MOSFET-fig-12

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91052.
For technical questions, contact: h[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

Documents / Resouces

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