VISHAY IRF840 Siliconix Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| PRODUCT SUMMARY | ||
| VDS (V) | 500 | |
| RDS(on) (W) | VGS = 10 V | 0.85 |
| Qg max. (nC) | 63 | |
| Qgs (nC) | 9.3 | |
| Qgd (nC) | 32 | |
| Configuration | Single | |
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRF840PbF |
| Lead (Pb)-free and halogen-free | IRF840PbF-BE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 500 | V | ||
| Gate-source voltage | VGS | ± 20 | V | ||
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID | 8.0 | A |
| TC = 100 °C | 5.1 | ||||
| Pulsed drain current a | IDM | 32 | |||
| Linear derating factor | 1.0 | W/°C | |||
| Single pulse avalanche energy b | EAS | 510 | mJ | ||
| Repetitive avalanche current a | IAR | 8.0 | A | ||
| Repetitive avalanche energy a | EAR | 13 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 125 | W | |
| Peak diode recovery dV/dt c | dV/dt | 3.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |||
| Mounting torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
- ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 | °C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | – | 1.0 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | – | – | V | |
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.78 | – | V/°C | |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | – | 4.0 | V | |
| Gate-source leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero gate voltage drain current | IDSS | VDS = 500 V, VGS = 0 V | – | – | 25 | μA | |
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | ||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 4.8 A b | – | – | 0.85 | W |
| Forward transconductance | gfs | VDS = 50 V, ID = 4.8 A b | 4.9 | – | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 | – | 1300 | – | pF | |
| Output capacitance | Coss | – | 310 | – | |||
| Reverse transfer capacitance | Crss | – | 120 | – | |||
| Total gate charge | Qg | VGS = 10 V | ID = 8 A, VDS = 400 V, see fig. 6 and 13 b | – | – | 63 | nC |
| Gate-source charge | Qgs | – | – | 9.3 | |||
| Gate-drain charge | Qgd | – | – | 32 | |||
| Turn-on delay time | td(on) | VDD = 250 V, ID = 8 A Rg = 9.1 W, RD = 31 W, see fig. 10 b | – | 14 | – |
ns | |
| Rise time | tr | – | 23 | – | |||
| Turn-off delay time | td(off) | – | 49 | – | |||
| Fall time | tf | – | 20 | – | |||
| Internal drain inductance | LD | Between lead,6 mm (0.25″) from package and center of die contact
| – | 4.5 | – |
nH | |
| Internal source inductance | LS | – | 7.5 | – | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.6 | – | 2.8 | W | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol showing the integral reverse p – n junction diode
| – | – | 8.0 | A | |
| Pulsed diode forward current a | ISM | – | – | 32 | |||
| Body diode voltage | VSD | TJ = 25 °C, IS = 8 A, VGS = 0 V b | – | – | 2.0 | V | |
| Body diode reverse recovery time | trr | TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b | – | 460 | 970 | ns | |
| Body diode reverse recovery charge | Qrr | – | 4.2 | 8.9 | μC | ||
| Forward turn-on time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dv/dt Test Circuit
TO-220-1
Package Picture
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