Vishay Irfz40 Siliconix Power Mosfet Instruction Manual

VISHAY IRFZ40 Siliconix Power MOSFET

FEATURES

• Dynamic dV/dt rating
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12)
• ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
• 1.6 mm from case
• Current limited by the package, (die current = 51 A)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
•  Pulse width ≤ 300 μs; duty cycle ≤ 2 %

SPECIFICATIONS

(TJ= 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA		60	–	–	V
VDS temperature coefficient	ÄVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.060	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 60 V, VGS = 0 V		–	–	25	μA
		VDS = 48 V, VGS = 0 V, TJ = 125 °C		–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 31 Ab	–	–	0.028	Ù
Forward transconductance	gfs	VDS = 25 V, ID = 31 A		15	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5		–	1900	–	pF
Output capacitance	Coss			–	920	–
Reverse transfer capacitance	Crss			–	170	–
Total gate charge	Qg	VGS = 10 V	ID = 51 A, VDS = 48 V, see fig. 6 and 13b	–	–	67	nC
Gate-source charge	Qgs			–	–	18
Gate-drain charge	Qgd			–	–	25
Turn-on delay time	td(on)	VDD = 30 V, ID = 51 A, Rg = 9.1 Ù, RD = 0.55 Ù, see fig. 10b		–	14	–	ns
Rise time	tr			–	110	–
Turn-off delay time	td(off)			–	45	–
Fall time	tf			–	92	–
Internal drain inductance	LD	Between lead, 6 mm (0.25″) from package and center of die contact		–	4.5	–	nH
Internal source inductance	LS			–	7.5	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol            D showing the integral reverse p – n junction diode		–	–	50	A
Pulsed diode forward current a	ISM			–	–	200
Body diode voltage	VSD	TJ = 25 °C, IS = 51 A, VGS = 0 Vb		–	–	2.5	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ms		–	120	180	ns
Body diode reverse recovery charge	Qrr			–	0.53	0.80	nC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91385.

Package Information

TO-220-1

Note

• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

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Revision: 01-Jan-2023
Document Number: 91000
www.vishay.com
S21-1045-Rev. C, 25-Oct-2021
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• applications.no
• IRFZ40 Power MOSFET | Vishay