VISHAY IRL640S Siliconix Power MOSFET
FEATURES
- Surface-mount
- Available in tape and reel
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
- Note: This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
| PRODUCT SUMMARY | ||
| VDS (V) | 200 | |
| RDS(on) (W) | VGS = 5 V | 0.18 |
| Qg max. (nC) | 66 | |
| Qgs (nC) | 9.0 | |
| Qgd (nC) | 38 | |
| Configuration | Single | |
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
| ORDERING INFORMATION | |||
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Lead (Pb)-free and Halogen-free | SiHL640S-GE3 | SiHL640STRL-GE3 a | SiHL640STRR-GE3 a |
| Lead (Pb)-free | IRL640SPbF | IRL640STRLPbF a | IRL640STRRPbF a |
Note
a. See device orientation
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 200 | V | ||
| Gate-Source Voltage | VGS | ± 10 | |||
| Continuous Drain Current | VGS at 5.0 V | TC = 25 °C | ID | 17 | A |
| TC = 100 °C | 11 | ||||
| Pulsed Drain Current a | IDM | 68 | |||
| Linear Derating Factor | 1.0 | W/°C | |||
| Linear Derating Factor (PCB mount) e | 0.025 | ||||
| Single Pulse Avalanche Energy b | EAS | 580 | mJ | ||
| Repetitive Avalanche Current a | IAR | 10 | A | ||
| Repetitive Avalanche Energy a | EAR | 13 | mJ | ||
| Maximum Power Dissipation | TC = 25 °C | PD | 125 | W | |
| Maximum Power Dissipation (PCB mount) e | TA = 25 °C | 3.1 | |||
| Peak Diode Recovery dV/dt c | dV/dt | 5.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C | ||
| Soldering Temperature d | For 10 s | 300 | |||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 17 A (see fig. 12)
c. ISD 17 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1” square PCB (FR-4 or G-10 material)
| THERMAL RESISTANCE RATINGS | |||||
| PARAMETER | SYMBOL | MIN. | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | RthJA | – | – | 62 | °C/W |
| Maximum Junction-to-Ambient (PCB mount) a | RthJA | – | – | 40 | |
| Maximum Junction-to-Case (Drain) | RthJC | – | – | 1.0 | |
Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0, ID = 250 μA | 200 | – | – | V | |
| VDS Temperature Coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.27 | – | V/°C | |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 1.0 | – | 2.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 10 V | – | – | ± 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V | – | – | 25 | μA | |
| VDS = 160 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 5.0 V | ID = 10 A b | – | – | 0.18 | W |
| VGS = 4.0 V | ID = 8.5 A b | – | – | 0.27 | |||
| Forward Transconductance | gfs | VDS = 50 V, ID = 10 A b | 16 | – | – | S | |
| Dynamic | |||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 | – | 1800 | – | pF | |
| Output Capacitance | Coss | – | 400 | – | |||
| Reverse Transfer Capacitance | Crss | – | 120 | – | |||
| Total Gate Charge | Qg | VGS = 5.0 V | ID = 17 A, VDS = 160 V, see fig. 6 and 13 b | – | – | 66 | nC |
| Gate-Source Charge | Qgs | – | – | 9.0 | |||
| Gate-Drain Charge | Qgd | – | – | 38 | |||
| Turn-On Delay Time | td(on) | VDD = 100 V, ID = 17 A, Rg = 4.6 W, RD = 5.7 W, see fig. 10 b | – | 8.0 | – |
ns | |
| Rise Time | tr | – | 83 | – | |||
| Turn-Off Delay Time | td(off) | – | 44 | – | |||
| Fall Time | tf | – | 52 | – | |||
| Internal Drain Inductance | LD | Between lead, D 6 mm (0.25″) from package and center of G die contact S | – | 4.5 | – |
nH | |
| Internal Source Inductance | LS | – | 7.5 | – | |||
| Gate Input Resistance | Rg | f = 1 MHz, open drain | 0.3 | – | 1.2 | W | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Source-Drain Diode Current | IS | MOSFET symbol D showing the integral reverse G p – n junction diode S | – | – | 17 | A | |
| Pulsed Diode Forward Current a | ISM | – | – | 68 | |||
| Body Diode Voltage | VSD | TJ = 25 °C, IS = 17 A, VGS = 0 V b | – | – | 2.0 | V | |
| Body Diode Reverse Recovery Time | trr | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b | – | 310 | 470 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | – | 3.2 | 4.8 | μC | ||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
TYPICAL CHARACTERISTICS
Peak Diode Recovery dV/dt Test Circuit 
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91306.
TO-263AB (HIGH VOLTAGE)
| MILLIMETERS | INCHES | MILLIMETERS | INCHES | |||||||
| DIM. | MIN. | MAX. | MIN. | MAX. | DIM. | MIN. | MAX. | MIN. | MAX. | |
| A | 4.06 | 4.83 | 0.160 | 0.190 | D1 | 6.86 | – | 0.270 | – | |
| A1 | 0.00 | 0.25 | 0.000 | 0.010 | E | 9.65 | 10.67 | 0.380 | 0.420 | |
| b | 0.51 | 0.99 | 0.020 | 0.039 | E1 | 6.22 | – | 0.245 | – | |
| b1 | 0.51 | 0.89 | 0.020 | 0.035 | e | 2.54 BSC | 0.100 BSC | |||
| b2 | 1.14 | 1.78 | 0.045 | 0.070 | H | 14.61 | 15.88 | 0.575 | 0.625 | |
| b3 | 1.14 | 1.73 | 0.045 | 0.068 | L | 1.78 | 2.79 | 0.070 | 0.110 | |
| c | 0.38 | 0.74 | 0.015 | 0.029 | L1 | – | 1.65 | – | 0.066 | |
| c1 | 0.38 | 0.58 | 0.015 | 0.023 | L2 | – | 1.78 | – | 0.070 | |
| c2 | 1.14 | 1.65 | 0.045 | 0.065 | L3 | 0.25 BSC | 0.010 BSC | |||
| D | 8.38 | 9.65 | 0.330 | 0.380 | L4 | 4.78 | 5.28 | 0.188 | 0.208 | |
| ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 | ||||||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimeters (inches).
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
- Thermal PAD contour optional within dimension E, L1, D1 and E1.
- Dimension b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
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