Vishay Sihfpf40 Power Mosfet Owner's Manual

IRFPF40, SiHFPF40
Vishay Siliconix
Power MOSFET
Owner’s Manual

SiHFPF40 Power MOSFET

RoHS*
COMPLIANT

FEATURES

• Dynamic DV/DT Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant with RoHS Directive 2002/95/EC

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar to but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 42 mH, Rg = 25 Ω, IAS = 4.7 A (see fig. 12).
c. ISD ≤ 4.7 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from the case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA		900	–	–	V
VDS Temperature Coefficient	DVDS/TJ	Reference to 25 °C, ID = 1 mA		–	1.0	–	V/°C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-Source Leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 900 V, VGS = 0 V		–	–	100	μA
		VDS = 720 V, VGS = 0 V, TJ = 125 °C		–	–	500
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V	ID = 2.8 Ab	–	–	2.5	L
Forward Transconductance	gfs	VDS = 50 V, ID = 2.8 Ab		2.5	–	–	S
Dynamic
Input Capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5		–	1600	–	pF
Output Capacitance	Coss			–	180	–
Reverse Transfer Capacitance	Crss			–	63	–
Total Gate Charge	Qg	VGS = 10 V	ID = 4.7 A, VDS = 360 V, see fig. 6 and 13b	–	–	120	nC
Gate-Source Charge	Qgs			–	–	16
Gate-Drain Charge	Qgd			–	–	67
Turn-On Delay Time	td(on)	VDD = 450 V, ID = 4.7 A , Rg = 9.1 L, RD = 95 L, see fig. 10b		–	15	–	ns
Rise Time	tr			–	36	–
Turn-Off Delay Time	td(off)			–	110	–
Fall Time	tf			–	32	–
Internal Drain Inductance	LD	Between lead,6 mm (0.25″) from the package and center of the die contact		–	5.0	–	nH
Internal Source Inductance	LS			–	13	–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	IS	MOSFET symbol showing the integral reverse p – n junction diode		–	–	4.7	A
Pulsed Diode Forward Current	ISM			–	–	19
Body Diode Voltage	VSD	TJ = 25 °C, IS = 4.7 A, VGS = 0 Vb		–	–	1.8	V
Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = 4.7 A, dI/dt = 100 A/μsb		–	510	770	ns
Body Diode Reverse Recovery Charge	Qrr			–	2.2	3.3	μC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91250.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at the maximum material condition

VERSION 2: FACILITY CODE = Y

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VERSION 3: FACILITY CODE = N

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer
ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN, OR OTHERWISE.
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Revision: 19-Oct-2020
Document Number: 91360
www.vishay.com

References

• applications.no
• IRFPF40 Power MOSFET | Vishay