VISHAY SiHFPS43N50K Power Mosfet
FEATURES
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
| PRODUCT SUMMARY | ||
| VDS (V) | 500 | |
| RDS(on) (W) | VGS = 10 V | 0.078 |
| Qg (Max.) (nC) | 350 | |
| Qgs (nC) | 85 | |
| Qgd (nC) | 180 | |
| Configuration | Single | |
| ORDERING INFORMATION | |
| Package | Super-247 |
| Lead (Pb)-free and halogen-free | SiHFPS43N50K-GE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 500 | V | ||
| Gate-source voltage | VGS | ± 30 | |||
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID | 47 | A |
| TC = 100 °C | 29 | ||||
| Pulsed drain current a | IDM | 190 | |||
| Linear derating factor | 4.3 | W/°C | |||
| Single pulse avalanche energy b | EAS | 910 | mJ | ||
| Repetitive avalanche current a | IAR | 47 | A | ||
| Repetitive avalanche energy a | EAR | 54 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 540 | W | |
| Peak diode recovery dV/dt c | dV/dt | 9.0 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | – 55 to + 150 | °C | ||
| Soldering recommendations (peak temperature) | for 10 s | 300 d | |||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Starting TJ = 25 °C, L = 0.82 mH, Rg = 25 Ω, IAS = 47 A (see fig. 12c)
- c. ISD ≤ 47 A, dI/dt ≤ 230 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 40 | °C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.24 | – | |
| Maximum junction-to-case (drain) | RthJC | – | 0.23 | |
SPECIFICATIONS
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | – | – | V | |
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.60 | – | V/°C | |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 3.0 | – | 5.0 | V | |
| Gate-source leakage | IGSS | VGS = ± 30 V | – | – | ± 100 | nA | |
| Zero gate voltage drain current | IDSS | VDS = 500 V, VGS = 0 V | – | – | 50 | μA | |
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | ||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 28 A b | – | 0.078 | 0.090 | W |
| Forward transconductance | gfs | VDS = 50 V, ID = 28 A | 23 | – | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 | – | 8310 | – |
pF | |
| Output capacitance | Coss | – | 960 | – | |||
| Reverse transfer capacitance | Crss | – | 120 | – | |||
| Output capacitance | Coss | VGS = 0 V | VDS = 1.0 V, f = 1.0 MHz | – | 10170 | – | |
| VDS = 400 V, f = 1.0 MHz | – | 240 | – | ||||
| Effective output capacitance | Coss eff. | VDS = 0 V to 400 Vc | – | 440 | – | ||
| Total gate charge | Qg | VGS = 10 V | D = 47 A, VDS = 400 V, see fig. 6 and 13 b | – | – | 350 | nC |
| Gate-source charge | Qgs | – | – | 85 | |||
| Gate-drain charge | Qgd | – | – | 180 | |||
| Turn-on delay time | td(on) | VDD = 250 V, ID = 47 A, RG = 1.0 W, see fig. 10 b | – | 25 | – |
ns | |
| Rise time | tr | – | 140 | – | |||
| Turn-off delay time | td(off) | – | 55 | – | |||
| Fall time | tf | – | 74 | – | |||
| Drain-source body diode characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol D showing the integral reverse G p – n junction diode S | – | – | 47 | A | |
| Pulsed diode forward current a | ISM | – | – | 190 | |||
| Body diode voltage | VSD | TJ = 25 °C, IS = 47 A, VGS = 0 V b | – | – | 1.5 | V | |
| Body diode reverse recovery time | trr | TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μs b | – | 620 | 940 | ns | |
| Body diode reverse recovery charge | Qrr | – | 14 | 21 | μC | ||
| Body diode recovery current | IRRM | – | 38 | – | A | ||
| Forward turn-on time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 400 μs; duty cycle ≤ 2 %
- c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91262
Package Information
VERSION 1: FACILITY CODE = Y
| MILLIMETERS | INCHES | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| A | 4.70 | 5.30 | 0.185 | 0.209 |
| A1 | 1.50 | 2.50 | 0.059 | 0.098 |
| A2 | 2.25 | 2.65 | 0.089 | 0.104 |
| b | 1.30 | 1.60 | 0.051 | 0.063 |
| b2 | 1.80 | 2.20 | 0.071 | 0.087 |
| b4 | 3.00 | 3.25 | 0.118 | 0.128 |
| c (1) | 0.38 | 0.89 | 0.015 | 0.035 |
| D | 19.80 | 20.80 | 0.780 | 0.819 |
| MILLIMETERS | INCHES | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| D1 | 15.50 | 16.10 | 0.610 | 0.634 |
| D2 | 0.70 | 1.30 | 0.028 | 0.051 |
| E | 15.10 | 16.10 | 0.594 | 0.634 |
| E1 | 13.30 | 13.90 | 0.524 | 0.547 |
| e | 5.45 BSC | 0.215 BSC | ||
| L | 13.70 | 14.70 | 0.539 | 0.579 |
| L1 | 1.00 | 1.60 | 0.039 | 0.063 |
| R | 2.00 | 3.00 | 0.079 | 0.118 |
VERSION 2: FACILITY CODE = N
| MILLIMETERS | MILLIMETERS | |||||
| DIM. | MIN. | MAX. | DIM. | MIN. | MAX. | |
| A | 4.83 | 5.21 | D1 | 16.25 | 17.65 | |
| A1 | 2.29 | 2.54 | D2 | 0.50 | 0.80 | |
| A2 | 1.91 | 2.16 | E | 15.75 | 16.13 | |
| b’ | 1.07 | 1.28 | E1 | 13.10 | 14.15 | |
| b | 1.07 | 1.33 | E2 | 3.68 | 5.10 | |
| b1 | 1.91 | 2.41 | E3 | 1.00 | 1.90 | |
| b2 | 1.91 | 2.16 | E4 | 12.38 | 13.43 | |
| b3 | 2.87 | 3.38 | e | 5.44 BSC | ||
| b4 | 2.87 | 3.13 | N | 3 | ||
| c’ | 0.55 | 0.65 | L | 19.81 | 20.32 | |
| c | 0.55 | 0.68 | L1 | 3.70 | 4.00 | |
| D | 20.80 | 21.10 | Q | 5.49 | 6.00 | |
| ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975 | ||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Outline conforms to JEDEC® outline to TO-274AD
- Dimensions are measured in mm, angles are in degree
- Metal surfaces are tin plated, except area of cut
Disclaimer
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