Vishay Sihg460b D Series Power Mosfet User Manual

Vishay Sihg460b D Series Power Mosfet User Manual

VISHAY SiHG460B D Series Power MOSFET User Manual

D Series Power MOSFET

PRODUCT SUMMARY
VDS (V) at TJ max.550
RDS(on) max. at 25 °C (W)VGS = 10 V0.25
Qg max. (nC)170
Qgs (nC)14
Qgd (nC)28
ConfigurationSingle

FEATURES

  • Optimal Design
    – Low Area Specific On-Resistance
    – Low Input Capacitance (Ciss)
    – Reduced Capacitive Switching Losses
    – High Body Diode Ruggedness
    – Avalanche Energy Rated (UIS)
  • Optimal Efficiency and Operation
    – Low Cost
    – Simple Gate Drive Circuitry
    – Low Figure-of-Merit (FOM): Ron x Qg
    – Fast Switching
  • Material categorization: For definitions of compliance
    please see www.vishay.com/doc?99912
    Note
  •  Lead (Pb)-containing terminations are not RoHS-compliant.
    Exemptions may apply
ORDERING INFORMATION
PackageTO-247AC
Lead (Pb)-freeIRFP460BPbF
Lead (Pb)-free and Halogen-freeSiHG460B-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETERSYMBOLLIMITUNIT
Drain-Source VoltageVDS500 

V

Gate-Source VoltageVGS± 20
Gate-Source Voltage AC (f > 1 Hz)30
Continuous Drain Current (TJ = 150 °C)VGS at 10 VTC = 25 °CID20 

A

TC = 100 °C13
Pulsed Drain CurrentaIDM62
Linear Derating Factor2.2W/°C
Single Pulse Avalanche EnergybEAS281mJ
Maximum Power DissipationPD278W
Operating Junction and Storage Temperature RangeTJ, Tstg– 55 to + 150°C
Drain-Source Voltage SlopeTJ = 125 °CdV/dt24V/ns
Reverse Diode dV/dtd0.36
Soldering Recommendations (Peak Temperature)for 10 s300c°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.
c. 1.6 mm from case.
d. ISD  ID, starting TJ = 25 °C.

THERMAL RESISTANCE RATINGS
PARAMETERSYMBOLTYP.MAX.UNIT
Maximum Junction-to-AmbientRthJA40°C/W
Maximum Junction-to-Case (Drain)RthJC0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETERSYMBOLTEST CONDITIONSMIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 μA500V
VDS Temperature CoefficientDVDS/TJReference to 25 °C, ID = 250 μA0.56V/°C
Gate-Source Threshold Voltage (N)VGS(th)VDS = VGS, ID = 250 μA24V
Gate-Source LeakageIGSSVGS = ± 20 V± 100nA
Zero Gate Voltage Drain CurrentIDSSVDS = 500 V, VGS = 0 V1μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C10
Drain-Source On-State ResistanceRDS(on)VGS = 10 VID = 10 A0.20.25W
Forward TransconductancegfsVDS = 50 V, ID = 10 A12S
Dynamic
Input CapacitanceCissVGS = 0 V, VDS = 100 V,

f = 1 MHz

3094 

 

 

pF

Output CapacitanceCoss152
Reverse Transfer CapacitanceCrss13
Effective output capacitance, energy relatedaCo(er) 

VGS = 0 V, VDS = 0 V to 400 V

131
Effective output capacitance, time relatedbCo(tr)189
Total Gate ChargeQg 

VGS = 10 V

 

ID = 10 A, VDS = 400 V

85170 

nC

Gate-Source ChargeQgs14
Gate-Drain ChargeQgd28
Turn-On Delay Timetd(on) 

VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 W

2450 

 

ns

Rise Timetr3162
Turn-Off Delay Timetd(off)117176
Fall Timetf56112
Gate Input ResistanceRgf = 1 MHz, open drain1.8W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode CurrentISMOSFET symbol

D

showing the

integral reverse                    G

p – n junction diode                                             S

20 

A

Pulsed Diode Forward CurrentISM80
Diode Forward VoltageVSDTJ = 25 °C, IS = 10 A, VGS = 0 V1.2V
Reverse Recovery TimetrrTJ = 25 °C, IF = IS = 10 A,

dI/dt = 100 A/μs, VR = 20 V

437ns
Reverse Recovery ChargeQrr5.9μC
Reverse Recovery CurrentIRRM25A

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics


Fig. 2 – Typical Output Characteristics


Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage


Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

 

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10 – Temperature vs. Drain-to-Source Voltage

 

 

Fig. 11 – Normalized Thermal Transient Impedance, Junction-to-Case

Fig. 12 – Switching Time Test Circuit

Fig. 13 – Switching Time Waveforms

Fig. 15 – Unclamped Inductive Waveforms

Fig. 16 – Basic Gate Charge Waveform

Fig. 17 – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Fig. 18 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91502.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

 MILLIMETERS 
DIM.MIN.MAX.NOTES
A4.835.21 
A12.292.55 
A21.502.49 
b1.121.33 
b11.121.28 
b21.912.396
b31.912.34 
b42.873.226, 8
b52.873.18 
c0.550.696
c10.550.65 
D20.4020.704

 MILLIMETERS 
DIM.MIN.MAX.NOTES
D116.2516.855
D20.560.76 
E15.5015.874
E113.4614.165
E24.525.493
e5.44 BSC 
L14.9015.40 
L13.964.166
Ø P3.563.657
Ø P17.19 ref. 
Q5.315.69 
S5.545.74 

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
  7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 2: FACILITY CODE = Y

 MILLIMETERS 
DIM.MIN.MAX.NOTES
A4.585.31 
A12.212.59 
A21.172.49 
b0.991.40 
b10.991.35 
b21.532.39 
b31.652.37 
b42.423.43 
b52.593.38 
c0.380.86 
c10.380.76 
D19.7120.82 
D113.08 
 MILLIMETERS 
DIM.MIN.MAX.NOTES
D20.511.30 
E15.2915.87 
E113.72 
e5.46 BSC 
Ø k0.254 
L14.2016.25 
L13.714.29 
Ø P3.513.66 
Ø P17.39 
Q5.315.69 
R4.525.49 
S5.51 BSC 
   

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4.  Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
  7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

 MILLIMETERS  MILLIMETERS
DIM.MIN.MAX.DIM.MIN.MAX.
A4.655.31D20.511.35
A12.212.59E15.2915.87
A21.171.37E113.46
b0.991.40e5.46 BSC
b10.991.35k0.254
b21.652.39L14.2016.10
b31.652.34L13.714.29
b42.593.43N7.62 BSC
b52.593.38P3.563.66
c0.380.89P17.39
c10.380.84Q5.315.69
D19.7120.70R4.525.49
D113.08S5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6.  Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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