Vishay Sihf15n60e E Series Power Mosfet Owner's Manual

VISHAY SiHF15N60E E Series Power MOSFET 

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
  – High-intensity discharge (HID)
  – Fluorescent ballast lighting
• Industrial
  – Welding
  – Induction heating
  – Motor drives
  – Battery chargers
  – Renewable energy
  – Solar (PV inverters)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 11.6 mH, Rg = 25 , IAS = 4.2 A.
c. 1.6 mm from case.
d. ISD > ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
e. Limited by maximum junction temperature.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA		600	–	–	V
VDS Temperature Coefficient	DVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.71	–	V/°C
Gate-Source Threshold Voltage (N)	VGS(th)	VDS = VGS, ID = 250 μA		2	–	4	V
Gate-Source Leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
		VGS = ± 30 V		–	–	± 1	μA
Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V		–	–	1	μA
		VDS = 480 V, VGS = 0 V, TJ = 125 °C		–	–	10
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V	ID = 8 A	–	0.23	0.28	W
Forward Transconductance	gfs	VDS = 30 V, ID = 8 A		–	4.6	–	S
Dynamic
Input Capacitance	Ciss	VGS = 0 V, VDS = 100 V, f = 1 MHz		–	1350	–	pF
Output Capacitance	Coss			–	70	–
Reverse Transfer Capacitance	Crss			–	5	–
Effective Output Capacitance, Energy Related a	Co(er)	VDS = 0 V to 480 V, VGS = 0 V		–	53	–
Effective Output Capacitance, Time Related b	Co(tr)			–	177	–
Total Gate Charge	Qg	VGS = 10 V	ID = 8 A, VDS = 480 V	–	39	78	nC
Gate-Source Charge	Qgs			–	11	–
Gate-Drain Charge	Qgd			–	17	–
Turn-On Delay Time	td(on)	VDD = 480 V, ID = 8 A, VGS = 10 V, Rg = 9.1 W		–	16	32	ns
Rise Time	tr			–	26	52
Turn-Off Delay Time	td(off)			–	41	82
Fall Time	tf			–	22	44
Gate Input Resistance	Rg	f = 1 MHz, open drain		0.3	0.86	1.7	W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		MOSFET symbol showing the integral reverse p – n junction diode		–	–	15	A
Pulsed Diode Forward Current	ISM			–	–	60
Diode Forward Voltage	VSD	TJ = 25 °C, IS = 8 A, VGS = 0 V		–	1.0	1.2	V
Reverse Recovery Time	trr	TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 25 V		–	302	604	ns
Reverse Recovery Charge	Qrr			–	4.0	8	μC
Reverse Recovery Current	IRRM			–	24	–	A

Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91480.

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

Disclaimer

LL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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References

• applications.no
• vishay.com/doc?91000
• SiHF15N60E E Series Power MOSFET | Vishay