Vishay Irfi9z14gpbf Power Mosfet Owner's Manual

VISHAY IRFI9Z14GPBF Power MOSFET Owner’s Manual

TO-220 FULLPAK

P-Channel MOSFET

FEATURES

• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• P-channel
• 175 °C operating temperature
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 , IAS = -5.3 A (see fig. 12)
c. ISD  -6.7 A, dI/dt  90 A/μs, VDD  VDS, TJ  175 °C
d. 1.6 mm from case

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width  300 μs; duty cycle  2 %

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 – Typical Output Characteristics, TC= 25 °C

Fig. 2 – Typical Output Characteristics, TC= 175 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10a – Switching Time Test Circuit

Fig. 10b – Switching Time Waveforms

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a – Unclamped Inductive Test Circuit Fig.

12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Fig. 13a – Basic Gate Charge Waveform

Fig. 13b – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Note

• Compliment N-Channel of D.U.T. for driver

Fig. 14 – For P-Channel

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and allliability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
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References

• applications.no
• vishay.com/doc?91000
• IRFI9Z14G MOSFETs | Vishay