Vishay Irfp360pbf Power Mosfet Transistor User Manual

User Manual
www.vishay.com

IRFP360
Vishay Siliconix

IRFP360PBF Power Mosfet Transistor

Power MOSFET

FEATURES

• Dynamic dV/dt rated
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note
  * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12)
c. ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from the case

SPECIFICATIONS (T j = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 pA		400	–		V
VDS temperature coefficient	_I Vos/TJ	Reference to 25 °C, ID = 1 mA		–	0.56	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 pA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–		± 100	nA
Zero gate voltage drain current	loss	VDs = 400 V, VGs = 0 V				25	pA
		VDs = 320 V, VGs = 0 V, T j = 125 °C				250
Drain-source on-state resistance	Roston)	VGs = 10 V	I          ID = 14 A b			0.20	Q
Forward transconductance	grs	VDs = 50 V, ID = 14 A b			–		S
Dynamic
Input capacitance	Cass	VGS = 0 V, DVDs = 25 V, f = 1.0 MHz, see fig. 5		–	4500		pF
Output capacitance	Coss			–	1100
Reverse transfer capacitance	CRS,			–	490	–
Total gate charge	09	VGS = 10 V	23 A, = DVDs 320 ID see fig. 6 a = and 13 b V,		–	210	NC
Gate-source charge	Tags				–	30
Gate-drain charge	Ow				–	110
Turn-on delay time	Ltd(on)	VDD = 200 V, ID = 23 A , R9 = 4.312, RD = 8.3 Q, see fig. 10 b			18	–	ns
Rise time	t,				79	–
Turn-off delay time	td(oft)				100
Fall time	tf				67
Internal drain inductance	Lo	Between lead, 6 mm (0.251) from package and center of die contact			5.0
Internal source inductance	Ls				13	NH
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	is	MOSFET symbol showing the integral reverse p – n junction diode		–		23	A
Pulsed diode forward current a	Ism				–	92
Body diode voltage	Video	Tj = 25 °C, Is = 23 A, VGs=0Vb		–	–	1.8	V
Body diode reverse recovery time	t,	Tj = 25 °C, IF = 23 A, dl/dt = 100 A/ps b		–	420	630	ns
Body diode reverse recovery charge	OFT			–	5.6	8.4	PC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C	Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 2 – Typical Output Characteristics, TC = 150 °C	Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 3 – Typical Transfer Characteristics	Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage	Fig. 9 – Maximum Drain Current vs. Case Temperature

     Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90292.

Package Information

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

Notes
(1) Package reference: JEDEC ® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at the maximum material condition

VERSION 2: FACILITY CODE = Y

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) The contour of slot optional
(3) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) The contour of slot optional
(3) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer

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Revision: 19-Oct-2020
Document Number: 91360
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References

• applications.no
• vishay.com/doc?91000
• IRFP360 Power MOSFET | Vishay