Vishay Si3458bdv N-channel 60-v (d-s) Mosfet Owner's Manual (+ PDF)

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SI3458BDV N-Channel 60-V (D-S) Mosfet

Product Information:

The Si3458BDV is an N-Channel 60-V (D-S) MOSFET manufactured by
Vishay Siliconix. It is a small-sized MOSFET with a package type of
TSOP-6. The product features a drain-source voltage (VDS) of 60V
and a drain-source on-resistance (RDS(on)) of 0.100 at VGS = 10V
and 0.128 at VGS = 4.5V. The maximum continuous drain current (ID)
is 4.1A and the typical gate charge (Qg) is 3.5nC.

Product Usage Instructions:

Ensure that the Si3458BDV MOSFET is properly connected to the
circuit according to the pin configuration mentioned in the user
manual.
Provide a suitable drain-source voltage (VDS) within the
specified limit of 0V to 60V.
Apply a gate-source voltage (VGS) of 10V or 4.5V depending on
the desired drain-source on-resistance (RDS(on)).
Keep the drain current (ID) within the range of 2.5A to 4.1A
for continuous operation.
Take into account the maximum power dissipation (PD) of 2.1W to
prevent overheating.
Operate the MOSFET within the recommended junction and storage
temperature range of -55°C to 150°C.
Follow the soldering recommendations for peak temperature,
which should not exceed 260°C.
Consider the thermal resistance ratings for proper heat
dissipation, with typical values of 53°C/W for junction-to-ambient
and 32°C/W for junction-to-foot.
Refer to the user manual for detailed information on various
parameters such as breakdown voltage, threshold voltage, leakage
current, on-state resistance, transconductance, capacitances, gate
charge, delay times, and diode characteristics.
Ensure that the MOSFET is not subjected to stresses beyond the
absolute maximum ratings mentioned in the user manual to avoid
permanent damage and ensure device reliability.

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N-Channel 60-V (D-S) MOSFET

Si3458BDV
Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

0.100 at VGS = 10 V 60
0.128 at VGS = 4.5 V

ID (A)d 4.1 3.6

Qg (Typ.) 3.5 nC

FEATURES
· Halogen-free According to IEC 61249-2-21 Definition
· TrenchFET® Power MOSFET · 100 % Rg Tested · Compliant to RoHS Directive 2002/95/EC

TSOP-6 Top View

APPLICATIONS
· Load Switch for Portable Applications · LED Backlight Switch · DC/DC Converter

3 mm D

2.85 mm

Marking Code

AN XXX

Lot Traceability and Date Code

Part # Code

Ordering Information: Si3458BDV-T1-E3 (Lead (Pb)-free) Si3458BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

D (1, 2, 5, 6)
G (3)
(4) S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage Gate-Source Voltage

VDS

VGS

± 20

TC = 25 °C

4.1

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C TA = 25 °C

3.2 3.2a, b

TA = 70 °C

2.5a, b

Pulsed Drain Current

IDM

Continuous Source-Drain Diode Current

TC = 25 °C TA = 25 °C

2.9 1.7a, b

TC = 25 °C

3.3

Maximum Power Dissipation

TC = 70 °C TA = 25 °C

2.1 2a, b

TA = 70 °C

1.3a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain)

t 5 s Steady State

Notes: a. Surface Mounted on 1″ x 1″ FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C.

Symbol RthJA RthJF

Typical 53 32

Maximum 62.5 38

Unit °C/W

Document Number: 69501 S09-0660-Rev. B, 20-Apr-09

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Si3458BDV
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient VGS(th) Temperature Coefficient

VDS/TJ VGS(th)/TJ

ID = 250 µA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Zero Gate Voltage Drain Current On-State Drain Currenta

IDSS ID(on)

VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 10 V

Drain-Source On-State Resistancea Forward Transconductancea

RDS(on) gfs

VGS = 10 V, ID = 3.2 A VGS = 4.5 V, ID = 2.8 A VDS = 15 V, ID = 3.2 A

Dynamicb

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = 30 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = 30 V, VGS = 10 V, ID = 3.2 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing.

VDS = 30 V, VGS = 4.5 V, ID = 3.2 A f = 1 MHz
VDD = 30 V, RL = 12 ID 2.5 A, VGEN = 4.5 V, Rg = 1
VDD = 30 V, RL = 12 ID 2.5 A, VGEN = 10 V, Rg = 1
TC = 25 °C IS = 2.5 A, VGS = 0 V
IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C

Min. 60 1.5
10

Typ. Max. Unit

60 – 6
0.082 0.105
12

3 ± 100
1 10
0.100 0.128

V mV/°C
V nA µA A S

350

7.1

3.5

5.5

1.1

0.95

2.3

3.5

2.9 A
10

0.8

1.2

22 ns
3

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 69501 S09-0660-Rev. B, 20-Apr-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

VGS = 10 V thru 4 V

1.6

ID – Drain Current (A)

I D – Drain Current (A)

1.2

0.8

VGS = 3 V

0.4

Si3458BDV
Vishay Siliconix
TC = – 55 °C TC = 25 °C TC = 125 °C

0.4

0.8

1.2

1.6

2.0

VDS – Drain-to-Source Voltage (V) Output Characteristics

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VGS – Gate-to-Source Voltage (V) Transfer Characteristics

0.15

500

RDS(on) – On-Resistance ()

0.12 0.09

VGS = 4.5 V VGS = 10 V

0.06

0.03

ID – Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage

10 ID = 3.2 A
8
6
4

VDS = 30 V VDS = 48 V

Qg – Total Gate Charge (nC) Gate Charge

RDS(on) – On-Resistance (Normalized)

C – Capacitance (pF)

400 Ciss
300

200

100 Coss

0 Crss

VDS – Drain-to-Source Voltage (V) Capacitance

2.0

1.8

ID = 3.2 A

1.6

VGS = 10 V

1.4

1.2

VGS = 4.5 V

1.0

0.8

0.6

0.4 – 50 – 25 0

25 50 75 100 125 150

TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature

VGS – Gate-to-Source Voltage (V)

Document Number: 69501 S09-0660-Rev. B, 20-Apr-09
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Si3458BDV
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.25

ID = 3.2 A

0.20

RDS(on) – On-Resistance ()

I S – Source Current (A)

0.15

125 °C

TJ = 150 °C

TJ = 25 °C

0.10

25 °C

VGS(th) (V)

0.2

0.4

0.6

0.8

1.0

1.2

VSD – Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage

2.50 ID = 250 µA
2.25

2.00

1.75

1.50

1.25 – 50 – 25

0 25 50 75 100 125 150
TJ – Temperature (°C) Threshold Voltage

100

Power (W)

0.05 0

VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage

0.001 0.01 0.1

100 1000

Time (s) Single Pulse Power (Junction-to-Ambient)

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I D – Drain Current (A)

Limited by RDS(on)* 10

100 µs 1
1 ms

0.1

TA = 25 °C Single Pulse

10 ms
100 ms 1 s, 10 s

0.01 0.1

BVDSS Limited

100

VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

Document Number: 69501 S09-0660-Rev. B, 20-Apr-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

ID – Drain Current (A) Power Dissipation (W)

4 3
3 2
2
1 1

100 125 150

TC – Foot (Drain) Temperature (°C) Current Derating*

Si3458BDV
Vishay Siliconix

100

125

150

TC – Foot (Drain) Temperature (°C) Power Derating

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 69501 S09-0660-Rev. B, 20-Apr-09
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Si3458BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1
0.1 0.05

0.02

0.01 10-4

Single Pulse 10-3

Notes:

PDM

t2 1. Duty Cycle, D =

t1 t2

2. Per Unit Base = RthJA = 75 °C/W

3. TJM – TA = PDMZthJA(t)

4. Surface Mounted

10-2

10-1

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1000

1 Duty Cycle = 0.5

0.2 0.1 0.1
0.05 0.02 Single Pulse

0.01

10-4

10-3

10-2

10-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient Thermal Impedance

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69501.

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Document Number: 69501 S09-0660-Rev. B, 20-Apr-09

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TSOP: 5/6-LEAD JEDEC Part Number: MO-193C

Package Information
Vishay Siliconix

E 1

-B-

E1 E

-B-

5-LEAD TSOP

0.08 C

0.15 M C B A
-AA2 A

6-LEAD TSOP

4x 1 R

– C – A1

Seating Plane

4x 1

(L1)

0.15 M C B A
0.17 Ref c
L 2 Gauge Plane Seating Plane
L

Document Number: 71200 18-Dec-06
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MILLIMETERS

Dim Min Nom Max

0.91

–

1.10

A 1

0.01

–

0.10

A 2

0.90

–

1.00

0.30

0.32

0.45

0.10

0.15

0.20

2.95

3.05

3.10

2.70

2.85

2.98

E 1

1.55

1.65

1.70

0.95 BSC

e 1

1.80

1.90

2.00

0.32

–

0.50

L 1

0.60 Ref

L 2

0.25 BSC

0.10

–

7 Nom

ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540

INCHES

Min Nom Max

0.036

–

0.043

0.0004

–

0.004

0.035 0.038 0.039

0.012 0.013 0.018

0.004 0.006 0.008

0.116 0.120 0.122

0.106 0.112 0.117

0.061 0.065 0.067

0.0374 BSC

0.071 0.075 0.079

0.012

–

0.020

0.024 Ref

0.010 BSC

0.004

–

7 Nom

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AN823
Vishay Siliconix

Mounting LITTLE FOOTR TSOP-6 Power MOSFETs

Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages.

The basis of the pad design for surface mounted power MOSFET is the basic footprint for the package. For the TSOP-6 package outline drawing see http://www.vishay.com/doc?71200 and see http://www.vishay.com/doc?72610 for the minimum pad footprint. In converting the footprint to the pad set for a power MOSFET, you must remember that not only do you want to make electrical connection to the package, but you must made thermal connection and provide a means to draw heat from the package, and move it away from the package.
In the case of the TSOP-6 package, the electrical connections are very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and are connected together. For a small signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board.
Figure 1 shows the copper spreading recommended footprint for the TSOP-6 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlays the basic pattern on pins 1,2,5, and 6. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. Notice that the planar copper is shaped like a “T” to move heat away from the drain leads in all directions. This pattern uses all the available area underneath the body for this purpose.
0.167 4.25

0.014 0.35
0.026 0.65

0.074 1.875

0.122 3.1

0.049 1.25

0.010 0.25

FIGURE 1. Recommended Copper Spreading Footprint

Document Number: 71743 27-Feb-04

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Since surface mounted packages are small, and reflow soldering is the most common form of soldering for surface mount components, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow reliability requirements. Devices are subjected to solder reflow as a test preconditioning and are then reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow temperature profile used, and the temperatures and time duration, are shown in Figures 2 and 3.

Ramp-Up Rate Temperature @ 155 ” 15_C Temperature Above 180_C Maximum Temperature Time at Maximum Temperature Ramp-Down Rate

+6_C/Second Maximum 120 Seconds Maximum 70 – 180 Seconds 240 +5/-0_C 20 – 40 Seconds +6_C/Second Maximum

FIGURE 2. Solder Reflow Temperature Profile
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AN823
Vishay Siliconix

255 – 260_C

10 s (max)

1X4_C/s (max)

140 – 170_C 3_C/s (max)

60-120 s (min) Pre-Heating Zone

217_C
60 s (max) Reflow Zone

Maximum peak temperature at 240_C is allowed.

FIGURE 3. Solder Reflow Temperature and Time Durations

3-6_C/s (max)

THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rqjc, or the junction-to-foot thermal resistance, Rqjf. This parameter is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device only, in other words, independent of the properties of the object to which the device is mounted. Table 1 shows the thermal performance of the TSOP-6.

TABLE 1.

Equivalent Steady State Performance–TSOP-6

Thermal Resistance Rqjf

30_C/W

SYSTEM AND ELECTRICAL IMPACT OF TSOP-6
In any design, one must take into account the change in MOSFET rDS(on) with temperature (Figure 4).

rDS(on) – On-Resiistance (Normalized)

On-Resistance vs. Junction Temperature 1.6
VGS = 4.5 V ID = 6.1 A 1.4

1.2

1.0

0.8

0.6 -50 -25 0

25 50 75 100 125 150

TJ – Junction Temperature (_C)

FIGURE 4. Si3434DV

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Document Number: 71743 27-Feb-04

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099 (2.510)

0.064 (1.626)

0.119 (3.023)

0.028 (0.699)

Return to Index Return to Index

0.039 (1.001)

0.020 (0.508)

0.019 (0.493)

Recommended Minimum Pads Dimensions in Inches/(mm)

APPLICATION NOTE

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Document Number: 72610 Revision: 21-Jan-08

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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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