SS22, SS23, SS24, SS25, SS26
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
SMB (DO-214AA)
Cathode 
Anode
LINKS TO ADDITIONAL RESOURCES
| PRIMARY CHARACTERISTICS | |
| IF(AV) | 2.0 A |
| VRRM | 20 V, 30 V, 40 V, 50 V, 60 V |
| IFSM | 75 A |
| VF | 0.50 V, 0.70 V |
| TJ max. | 150 °C |
| Package | SMB (DO-214AA) |
| Circuit configuration | Single |
FEATURES
- Low profile package
- Ideal for automated placement
- Guardring for overvoltage protection
- Low power losses, high efficiency
- Low forward voltage drop
- High surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
– Automotive ordering code: base P/NHE3 or P/NHM3 - Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 – RoHS-compliant, commercial grade Base P/N-M3 – halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X – RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X – halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, …..) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted)
| PARAMETER | SYMBOL | SS22 | SS23 | SS24 | SS25 | SS26 | UNIT |
| Device marking code | S2 | S3 | S4 | S5 | S6 | ||
| Maximum repetitive peak reverse voltage | VRRM | 20 | 30 | 40 | 50 | 60 | V |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | 35 | 42 | V |
| Maximum DC blocking voltage | VDC | 20 | 30 | 40 | 50 | 60 | V |
| Max. average forward rectified current at TL (fig. 1) | IF(Av) | 2.0 | A | ||||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load | 1 IFSM | 75 | A | ||||
| Non-repetitive avalanche energy at TA = 25 °C, !As = 2.0 A, L = 10 mH | EAs | 20 | mJ | ||||
| Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k12 | Vc | 8.0 | kV | ||||
| Voltage rate of change (rated VR) | dV/dt | 10000 | V/ps | ||||
| Operating junction temperature range | Tj | -65 to +150 | °C | ||||
| Storage temperature range | TsTG | -65 to +150 | °C | ||||
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
| PARAMETER | TEST CONDITIONS | SYMBOL | SS22 | SS23 | SS24 | SS25 | SS26 | UNIT |
| Maximum instantaneous forward voltage (1) | 2.0 A | VF | 0.5 | 0.7 | V | |||
| Maximum DC reverse current at rated DC blocking voltage (1) | TA = 25 °C | IR | 0.4 | mA | ||||
| TA = 100 °C | 10 | |||||||
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
| PARAMETER | SYMBOL | SS22 | SS23 | SS24 | SS25 | SS26 | UNIT |
| Typical thermal resistance (1) | RθJA | 75 | °C/W | ||||
| RθJL | 17 | ||||||
Note (1) PCB mounted with 0.55″ x 0.55″ (14 mm x 14 mm) copper pad areas
ORDERING INFORMATION
(Example)
| PREFERRED P/N | UNIT WEIGHT (g) | PREFERRED PACKAGE CODE | BASE QUANTITY | DELIVERY MODE |
| SS26-E3/52T | 0.096 | 52T | 750 | 7″ diameter plastic tape and reel |
| SS26-E3/5BT | 0.096 | 5BT | 3200 | 13″ diameter plastic tape and reel |
| SS26HE3_A/H (1) | 0.096 | 11 | 750 | 7″ diameter plastic tape and reel |
| SS26HE3_A/1 (1) | 0.096 | I | 3200 | 13″ diameter plastic tape and reel |
| SS26-M3/52T | 0.096 | 52T | 750 | 7″ diameter plastic tape and reel |
| SS26-M3/5BT | 0.096 | 5BT | 3200 | 13″ diameter plastic tape and reel |
| SS26HM3_A/H (1) | 0.096 | H | 750 | 7″ diameter plastic tape and reel |
| SS26HM3_A/I (1) | 0.096 | I | 3200 | 13″ diameter plastic tape and reel |
Note (1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
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PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
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Revision: 23-Apr-2020
Document Number: 88748
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Revision: 01-Jan-2022
Document Number: 91000
Vishay Intertechnology: Passives & Discrete Semiconductors
