Silicon Libs Efr32bg22 Wireless Gecko Soc Family Data Sheet

Silicon Libs Efr32bg22 Wireless Gecko Soc Family Data Sheet

Silicon labs

EFR32BG22 Wireless Gecko SoC Family Data Sheet

The EFR32BG22 Wireless Gecko family of SoCs is part of the Wireless Gecko portfolio. EFR32BG22 Wireless Gecko SoCs are ideal for enabling energy-friendly Bluetooth 5.2 networking for IoT devices.
The single-die solution combines a 76.8 MHz Cortex-M33 with a high performance 2.4 GHz radio to provide an industry-leading, energy efficient wireless, SoC for IoT connected applications.

Wireless Gecko applications include

• Asset Tags and Beacons
• Consumer Electronics Remote Controls
• Portable Medical
• Bluetooth Mesh Low Power Nodes
• Sports, Fitness, and Wellness devices
• Connected Home
• Building Automation and Security

KEY FEATURES

• 32-bit ARM® Cortex®-M33 core with 76.8 MHz maximum operating frequency
• Up to 512 kB of flash and 32 kB of RAM
• Energy-efficient radio core with low active and sleep currents
• Bluetooth 5.2 Direction Finding
• Integrated PA with up to 6 dBm (2.4 GHz) TX power
• Secure Boot with Root of Trust and Secure Loader (RTSL)

Diagram

Feature List

The EFR32BG22 highlighted features are listed below.

Low Power Wireless System-on-Chip

  • High Performance 32-bit 76.8 MHz MHz ARM Cortex®-M33 with DSP instruction and floating-point unit for efficient sig- nal processing
  • Up to 512 kB flash program memory
  • Up to 32 kB RAM data memory
  • 2.4 GHz radio operation

Radio Performance

  • -106.7 dBm sensitivity @ 125 kbps GFSK
  • -98.9 dBm sensitivity @ 1 Mbit/s GFSK
  • -96.2 dBm sensitivity @ 2 Mbit/s GFSK
  • TX power up to 6 dBm
  • 2.5 mA radio receive current
  • 3.4 mA radio transmit current @ 0 dBm output power
  • 7.5 mA radio transmit current @ 6 dBm output power

Low System Energy Consumption

  • 3.6 mA RX current (1 Mbps GFSK)
  • 4.1 mA TX current @ 0 dBm output power
  • 8.2 mA TX current @ 6 dBm output power
  • 27 μA/MHz in Active Mode (EM0) at 76.8 MHz
  • 1.40 μA EM2 DeepSleep current (32 kB RAM retention and RTC running from LFXO)
  • 1.75 μA EM2 DeepSleep current (32 kB RAM retention and RTC running from Precision LFRCO)
  • 0.17 μA EM4 current

Supported Modulation Format

  • 2 (G)FSK with fully configurable shaping
  • OQPSK DSSS
  • (G)MSK

Protocol Support

  • Bluetooth Low Energy (Bluetooth 5.2)
  • Direction finding using Angle-of-Arrival (AoA) and Angle-of- Departure (AoD)
  • Proprietary

Wide selection of MCU peripherals

  • Analog to Digital Converter (ADC)
  • 12-bit @ 1 Msps
  • 16-bit @ 76.9 ksps
  • Up to 26 General Purpose I/O pins with output state reten- tion and asynchronous interrupts
  • 8 Channel DMA Controller
  • 12 Channel Peripheral Reflex System (PRS)
  • 4 × 16-bit Timer/Counter with 3 Compare/Capture/PWM channels
  • 1 × 32-bit Timer/Counter with 3 Compare/Capture/PWM channels
  • 32-bit Real Time Counter
  • 24-bit Low Energy Timer for waveform generation
  • 1 × Watchdog Timer
  • 2 × Universal Synchronous/Asynchronous Receiver/Trans- mitter (UART/SPI/SmartCard (ISO 7816)/IrDA/I2S)
  • 1 × Enhanced Universal Asynchronous Receiver/Transmit- ter (EUART)
  • 2 × I2C interface with SMBus support
  • Digital microphone interface (PDM)
  • Precision Low-Frequency RC Oscillator to replace 32 kHz sleep crystal
  • RFSENSE with selective OOK mode
  • Die temperature sensor with +/-1.5 degree C accuracy after single-point calibration

Wide Operating Range

  • 1.71 V to 3.8 V single power supply
  • -40 °C to 125 °C

Security Features

  • Secure Boot with Root of Trust and Secure Loader (RTSL)
  • Hardware Cryptographic Acceleration for AES128/256, SHA-1, SHA-2 (up to 256-bit), ECC (up to 256-bit), ECDSA, and ECDH
  • True Random Number Generator (TRNG) compliant with NIST SP800-90 and AIS-31
  • ARM® TrustZone®
  • Secure Debug with lock/unlock

Packages

  • QFN40 5 mm × 5 mm × 0.85 mm
  • QFN32 4 mm × 4 mm × 0.85 mm
  • TQFN32 4 mm × 4 mm × 0.30 mm

Ordering Information

Ordering CodeProtocol StackMax TX PowerMax CPU SpeedLFRCOFlash (kB)RAM (kB)GPIOPackageTemp Range
EFR32BG22C222F352GM32-C
  • Bluetooth 5.2
  • Proprietary
6 dBm76.8 MHzPrecision3523218QFN32-40 to 85 °C
EFR32BG22C222F352GM40-C
  • Bluetooth 5.2
  • Proprietary
6 dBm76.8 MHzPrecision3523226QFN40-40 to 85 °C
EFR32BG22C222F352GN32-C
  • Bluetooth 5.2
  • Proprietary
6 dBm76.8 MHzPrecision3523218TQFN32-40 to 85 °C
EFR32BG22C224F512GM32-C
  • Bluetooth 5.2
  • Direction finding
  • Proprietary
6 dBm76.8 MHzPrecision5123218QFN32-40 to 85 °C
EFR32BG22C224F512GM40-C
  • Bluetooth 5.2
  • Direction finding
  • Proprietary
6 dBm76.8 MHzPrecision5123226QFN40-40 to 85 °C
EFR32BG22C224F512GN32-C
  • Bluetooth 5.2
  • Direction finding
  • Proprietary
6 dBm76.8 MHzPrecision5123218TQFN32-40 to 85 °C
EFR32BG22C224F512IM32-C
  • Bluetooth 5.2
  • Direction finding
  • Proprietary
6 dBm76.8 MHzPrecision5123218QFN32-40 to 125 °C
EFR32BG22C224F512IM40-C
  • Bluetooth 5.2
  • Direction finding
  • Proprietary
6 dBm76.8 MHzPrecision5123226QFN40-40 to 125 °C

LE Long Range (125 kbps and 500 kbps) PHYs are only supported on part numbers which include AoA/AoD direction-finding capability.

System Overview

Introduction

The EFR32 product family combines an energy-friendly MCU with a high performance radio transceiver. The devices are well suited for secure connected IoT multi-protocol devices requiring high performance and low energy consumption. This section gives a short intro- duction to the full radio and MCU system. The detailed functional description can be found in the EFR32xG22 Reference Manual.

A block diagram of the EFR32BG22 family is shown in Figure 3.1 Detailed EFR32BG22 Block Diagram on page 7. The diagram   shows a superset of features available on the family, which vary by OPN. For more information about specific device features, consult Ordering Information. Diagram 2

Radio

The EFR32BG22 Wireless Gecko features a highly configurable radio transceiver supporting the Bluetooth Low Energy wireless proto- col.

Antenna Interface

The 2.4 GHz antenna interface consists of a single-ended pin (RF2G4_IO). The external components for the antenna interface in typi- cal applications are shown in the RF Matching Networks section.

Fractional-N Frequency Synthesizer

The EFR32BG22 contains a high performance, low phase noise, fully integrated fractional-N frequency synthesizer. The synthesizer is used in receive mode to generate the LO frequency for the down-conversion mixer. It is also used in transmit mode to directly generate the modulated RF carrier.

The fractional-N architecture provides excellent phase noise performance, frequency resolution better than 100 Hz, and low energy consumption. The synthesizer’s fast frequency settling allows for very short receiver and transmitter wake up times to reduce system energy consumption.

Receiver Architecture

The EFR32BG22 uses a low-IF receiver architecture, consisting of a Low-Noise Amplifier (LNA) followed by an I/Q down-conversion mixer. The I/Q signals are further filtered and amplified before being sampled by the IF analog-to-digital converter (IFADC).

The IF frequency is configurable from 150 kHz to 1371 kHz. The IF can further be configured for high-side or low-side injection, providing flexibility with respect to known interferers at the image frequency.

The Automatic Gain Control (AGC) module adjusts the receiver gain to optimize performance and avoid saturation for excellent selectivity and blocking performance. The 2.4 GHz radio is calibrated at production to improve image rejection performance.

Demodulation is performed in the digital domain. The demodulator performs configurable decimation and channel filtering to allow receive bandwidths ranging from 0.1 to 2530 kHz. High carrier frequency and baud rate offsets are tolerated by active estimation and compensation. Advanced features supporting high quality communication under adverse conditions include forward error correction by block and convolutional coding as well as Direct Sequence Spread Spectrum (DSSS).

A Received Signal Strength Indicator (RSSI) is available for signal quality metrics, for level-based proximity detection, and for RF channel access by Collision Avoidance (CA) or Listen Before Talk (LBT) algorithms. An RSSI capture value is associated with each received frame and the dynamic RSSI measurement can be monitored throughout reception.

Transmitter Architecture

The EFR32BG22 uses a direct-conversion transmitter architecture. For constant envelope modulation formats, the modulator controls phase and frequency modulation in the frequency synthesizer. Transmit symbols or chips are optionally shaped by a digital shaping filter. The shaping filter is fully configurable, including the BT product, and can be used to implement Gaussian or Raised Cosine shap- ing.

Carrier Sense Multiple Access – Collision Avoidance (CSMA-CA) or Listen Before Talk (LBT) algorithms can be automatically timed by the EFR32BG22. These algorithms are typically defined by regulatory standards to improve inter-operability in a given bandwidth be- tween devices that otherwise lack synchronized RF channel access.

Packet and State Trace

The EFR32BG22 Frame Controller has a packet and state trace unit that provides valuable information during the development phase. It features:

  • Non-intrusive trace of transmit data, receive data and state information
  • Data observability on a single-pin UART data output, or on a two-pin SPI data output
  • Configurable data output bitrate /baudrate
  • Multiplexed transmitted data, received data and state / meta information in a single serial data stream

Data Buffering

The EFR32BG22 features an advanced Radio Buffer Controller (BUFC) capable of handling up to 4 buffers of adjustable size from 64 bytes to 4096 bytes. Each buffer can be used for RX, TX or both. The buffer data is located in RAM, enabling zero-copy operations.

Radio Controller (RAC)

The Radio Controller controls the top level state of the radio subsystem in the EFR32BG22. It performs the following tasks:

  • Precisely-timed control of enabling and disabling of the receiver and transmitter circuitry
  • Run-time calibration of receiver, transmitter and frequency synthesizer
  • Detailed frame transmission timing, including optional LBT or CSMA-CA

RFSENSE Interface

The RFSENSE block allows the device to remain in EM2, EM3 or EM4 and wake when RF energy above a specified threshold is detec- ted. When operated in selective mode, the RFSENSE block performs OOK preamble and sync word detection, preventing false wake- up events.

General Purpose Input/Output (GPIO)

EFR32BG22 has up to 26 General Purpose Input/Output pins. Each GPIO pin can be individually configured as either an output or input. More advanced configurations including open-drain, open-source, and glitch-filtering can be configured for each individual GPIO pin. The GPIO pins can be overridden by peripheral connections, like SPI communication. Each peripheral connection can be routed to several GPIO pins on the device. The input value of a GPIO pin can be routed through the Peripheral Reflex System to other peripher- als. The GPIO subsystem supports asynchronous external pin interrupts.

All of the pins on ports A and port B are EM2 capable. These pins may be used by Low-Energy peripherals in EM2/3 and may also be used as EM2/3 pin wake-ups. Pins on ports C and D are latched/retained in their current state when entering EM2 until EM2 exit upon which internal peripherals could once again drive those pads.

A few GPIOs also have EM4 wake functionality. These pins are listed in the Alternate Function Table.

Clocking

Clock Management Unit (CMU)

The Clock Management Unit controls oscillators and clocks in the EFR32BG22. Individual enabling and disabling of clocks to all periph- eral modules is performed by the CMU. The CMU also controls enabling and configuration of the oscillators. A high degree of flexibility allows software to optimize energy consumption in any specific application by minimizing power dissipation in unused peripherals and oscillators.

Internal and External Oscillators

The EFR32BG22 supports two crystal oscillators and fully integrates four RC oscillators, listed below.

  • A high frequency crystal oscillator (HFXO) with integrated load capacitors, tunable in small steps, provides a precise timing refer- ence for the MCU. The HFXO provides excellent RF clocking performance using a 38.4 MHz crystal. The HFXO can also support an external clock source such as a TCXO for applications that require an extremely accurate clock frequency over temperature.
  • A 32.768 kHz crystal oscillator (LFXO) provides an accurate timing reference for low energy modes.
  • An integrated high frequency RC oscillator (HFRCO) is available for the MCU system, when crystal accuracy is not required. The HFRCO employs fast start-up at minimal energy consumption combined with a wide frequency range, from 1 MHz to 76.8 MHz.
  • An integrated fast start-up RC oscillator (FSRCO) that runs at a fixed 20 MHz
  • An integrated low frequency 32.768 kHz RC oscillator (LFRCO) for low power operation without an external crystal. Precision mode enables periodic recalibration against the 38.4 MHz HFXO crystal to improve accuracy to +/- 500 ppm, suitable for BLE sleep inter- val timing.
  • An integrated ultra-low frequency 1 kHz RC oscillator (ULFRCO) is available to provide a timing reference at the lowest energy con- sumption in low energy modes.

Counters/Timers and PWM

Timer/Counter (TIMER)

TIMER peripherals keep track of timing, count events, generate PWM outputs and trigger timed actions in other peripherals through the Peripheral Reflex System (PRS). The core of each TIMER is a 16-bit or 32-bit counter with up to 3 compare/capture channels. Each channel is configurable in one of three modes. In capture mode, the counter state is stored in a buffer at a selected input event. In compare mode, the channel output reflects the comparison of the counter to a programmed threshold value. In PWM mode, the TIMER supports generation of pulse-width modulation (PWM) outputs of arbitrary waveforms defined by the sequence of values written to the compare registers. In addition some timers offer dead-time insertion. See 3.13 Configuration Summary for information on the feature set of each timer.

Low Energy Timer (LETIMER)

The unique LETIMER is a 24-bit timer that is available in energy mode EM0 Active, EM1 Sleep, EM2 Deep Sleep, and EM3 Stop. This allows it to be used for timing and output generation when most of the device is powered down, allowing simple tasks to be performed while the power consumption of the system is kept at an absolute minimum. The LETIMER can be used to output a variety of wave- forms with minimal software intervention. The LETIMER is connected to the Peripheral Reflex System (PRS), and can be configured to start counting on compare matches from other peripherals such as the RTCC.

Real Time Clock with Capture (RTCC)

The Real Time Clock with Capture (RTCC) is a 32-bit counter providing timekeeping down to EM3. The RTCC can be clocked by any of the on-board low-frequency oscillators, and it is capable of providing system wake-up at user defined intervals.

A secondary RTC is used by the RF protocol stack for event scheduling, leaving the primary RTCC block available exclusively for appli- cation software.

Back-Up Real Time Counter

The Back-Up Real Time Counter (BURTC) is a 32-bit counter providing timekeeping in all energy modes, including EM4. The BURTC can be clocked by any of the on-board low-frequency oscillators, and it is capable of providing system wake-up at user defined invervals.

Watchdog Timer (WDOG)

The watchdog timer can act both as an independent watchdog or as a watchdog synchronous with the CPU clock. It has windowed monitoring capabilities, and can generate a reset or different interrupts depending on the failure mode of the system. The watchdog can also monitor autonomous systems driven by the Peripheral Reflex System (PRS).

Communications and Other Digital Peripherals

Universal Synchronous/Asynchronous Receiver/Transmitter (USART)

The Universal Synchronous/Asynchronous Receiver/Transmitter is a flexible serial I/O module. It supports full duplex asynchronous UART communication with hardware flow control as well as RS-485, SPI, MicroWire and 3-wire. It can also interface with devices sup- porting:

  • ISO7816 SmartCards
  • IrDA
  • I2S

Enhanced Universal Asynchronous Receiver/Transmitter (EUART)

The Enhanced Universal Asynchronous Receiver/Transmitter supports full duplex asynchronous UART communication with hardware flow control, RS-485 and IrDA support. In EM0 and EM1 the EUART provides a high-speed, buffered communication interface. When routed to GPIO ports A or B, the EUART may also be used in a low-energy mode and operate in EM2. A 32.768 kHz clock source allows full duplex UART communication up to 9600 baud.

Inter-Integrated Circuit Interface (I2C)

The I2C module provides an interface between the MCU and a serial I2C bus. It is capable of acting as both a master and a slave and supports multi-master buses. Standard-mode, fast-mode and fast-mode plus speeds are supported, allowing transmission rates from 10 kbit/s up to 1 Mbit/s. Slave arbitration and timeouts are also available, allowing implementation of an SMBus-compliant system. The interface provided to software by the I2C module allows precise timing control of the transmission process and highly automated trans- fers. Automatic recognition of slave addresses is provided in active and low energy modes. Note that not all instances of I2C are avalia- ble in all energy modes.

Peripheral Reflex System (PRS)

The Peripheral Reflex System provides a communication network between different peripheral modules without software involvement. Peripheral modules producing Reflex signals are called producers. The PRS routes Reflex signals from producers to consumer periph- erals which in turn perform actions in response. Edge triggers and other functionality such as simple logic operations (AND, OR, NOT) can be applied by the PRS to the signals. The PRS allows peripherals to act autonomously without waking the MCU core, saving power.

Pulse Density Modulation (PDM) Interface

The PDM module provides a serial interface and decimation filter for Pulse Density Modulation (PDM) microphones, isolated Sigma- delta ADCs, digital sensors and other PDM or sigma delta bit stream peripherals. A programmable Cascaded Integrator Comb (CIC) filter is used to decimate the incoming bit streams. PDM supports stereo or mono input data and DMA transfer.

Security Features

The following security features are available on the EFR32BG22:

  • Secure Boot with Root of Trust and Secure Loader (RTSL)
  • Cryptographic Accelerator
  • True Random Number Generator (TRNG)
  • Secure Debug with Lock/Unlock

Secure Boot with Root of Trust and Secure Loader (RTSL)

The Secure Boot with RTSL authenticates a chain of trusted firmware that begins from an immutable memory (ROM).

It prevents malware injection, prevents rollback, ensures that only authentic firmware is executed and protects Over The Air updates. More information on this feature can be found in the Application Note AN1218: Series 2 Secure Boot with RTSL.

Cryptographic Accelerator

The Cryptographic Accelerator is an autonomous hardware accelerator which supports AES encryption and decryption with 128/192/256-bit keys, Elliptic Curve Cryptography (ECC) to support public key operations and hashes. Supported block cipher modes of operation for AES include:

  • ECB (Electronic Code Book)
  • CTR (Counter Mode)
  • CBC (Cipher Block Chaining)
  • CFB (Cipher Feedback)
  • GCM (Galois Counter Mode)
  • CBC-MAC (Cipher Block Chaining Message Authentication Code)
  • GMAC (Galois Message Authentication Code)
  • CCM (Counter with CBC-MAC)

The Cryptographic Accelerator accelerates Elliptical Curve Cryptography and supports the NIST (National Institute of Standards and Technology) recommended curves including P-192 and P-256 for ECDH(Elliptic Curve Diffie-Hellman) key derivation and ECDSA (El- liptic Curve Digital Signature Algorithm) sign and verify operations.

Supported hashes include SHA-1, SHA2/224, and SHA-2/256.

This implementation provides a fast and energy efficient solution to state of the art cryptographic needs.

True Random Number Generator

The True Random Number Generator module is a non-deterministic random number generator that harvests entropy from a thermal energy source. It includes start-up health tests for the entropy source as required by NIST SP800-90B and AIS-31 as well as online health tests required for NIST SP800-90C.

The TRNG is suitable for periodically generating entropy to seed an approved pseudo random number generator.

Secure Debug with Lock/Unlock

For obvious security reasons, it is critical for a product to have its debug interface locked before being released in the field.

In addition, the EFR32BG22 also provides a secure debug unlock function that allows authenticated access based on public key cryp- tography. This functionality is particularly useful for supporting failure analysis while maintaining confidentiality of IP and sensitive end- user data.

More information on this feature can be found in the Application Note AN1190: EFR32xG2x Secure Debug.

Analog

Analog to Digital Converter (IADC)

The IADC is a hybrid architecture combining techniques from both SAR and Delta-Sigma style converters. It has a resolution of 12 bits at 1 Msps and 16 bits at up to 76.9 ksps. Hardware oversampling reduces system-level noise over multiple front-end samples. The IADC includes integrated voltage reference options. Inputs are selectable from a wide range of sources, including pins configurable as either single-ended or differential.

Power

The EFR32BG22 has an Energy Management Unit (EMU) and efficient integrated regulators to generate internal supply voltages. Only a single external supply voltage is required, from which all internal voltages are created. An optional integrated DC-DC buck regulator can be utilized to further reduce the current consumption. The DC-DC regulator requires one external inductor and one external capaci- tor.

The EFR32BG22 device family includes support for internal supply voltage scaling, as well as two different power domains groups for peripherals. These enhancements allow for further supply current reductions and lower overall power consumption.

Energy Management Unit (EMU)

The Energy Management Unit manages transitions of energy modes in the device. Each energy mode defines which peripherals and features are available and the amount of current the device consumes. The EMU can also be used to implement system-wide voltage scaling and turn off the power to unused RAM blocks to optimize the energy consumption in the target application. The DC-DC regula- tor operation is tightly integrated with the EMU.

Voltage Scaling

The EFR32BG22 supports supply voltage scaling for the LDO powering DECOUPLE, with independent selections for EM0 / EM1 and EM2 / EM3. Voltage scaling helps to optimize the energy efficiency of the system by operating at lower voltages when possible. The default EM0 / EM1 voltage scaling level is VSCALE2, which allows the core to operate in active mode at full speed. The intermediate level, VSCALE1, allows operation in EM0 and EM1 at up to 40 MHz. The lowest level, VSCALE0, can be used to conserve power in EM2 and EM3. The EMU will automatically switch the target voltage scaling level when transitioning between energy modes.

DC-DC Converter

The DC-DC buck converter covers a wide range of load currents, provides high efficiency in energy modes EM0, EM1, EM2 and EM3, and can supply up to 60 mA for device and radio operation. RF noise mitigation allows operation of the DC-DC converter without significantly degrading sensitivity of radio components. An on-chip supply-monitor signals when the supply voltage is low to allow bypass of the regulator via programmable software interrupt. It employs soft switching at boot and DCDC regulating-to-bypass transitions to limit the max supply slew-rate and mitigate inrush current.

Power Domains

The EFR32BG22 has three peripheral power domains for operation in EM2 and EM3, as well as the ability to selectively retain configu- rations for EM0/EM1 peripherals. A small set of peripherals always remain powered on in EM2 and EM3, including all peripherals which are available in EM4. If all of the peripherals in PD0B or PD0C are configured as unused, that power domain will be powered off in EM2 or EM3, reducing the overall current consumption of the device. Likewise, if the application can tolerate the setup time to re-configure used EM0/EM1 peripherals on wake, register retention for these peripherals can be disabled to further reduce the EM2 or EM3 current.

Peripheral Power Subdomains

Always available in EM2/EM3Power Domain PD0BPower Domain PD0C
RTCCLETIMER0LFRCO (Precision Mode)
LFRCO (Non-precision mode)1IADC0 
LFXO1I2C0 
BURTC1WDOG0 
RFSENSE1EUART0 
ULFRCO1PRS 
FSRCODEBUG 
Note:

1. Peripheral also available in EM4.

Reset Management Unit (RMU)

The RMU is responsible for handling reset of the EFR32BG22. A wide range of reset sources are available, including several power supply monitors, pin reset, software controlled reset, core lockup reset, and watchdog reset.

Core and Memory

Processor Core

The ARM Cortex-M processor includes a 32-bit RISC processor integrating the following features and tasks in the system:

  • ARM Cortex-M33 RISC processor achieving 1.50 Dhrystone MIPS/MHz
  • ARM TrustZone security technology
  • Embedded Trace Macrocell (ETM) for real-time trace and debug
  • Up to 512 kB flash program memory
  • Up to 32 kB RAM data memory
  • Configuration and event handling of all modules
  • 2-pin Serial-Wire debug interface

Memory System Controller (MSC)

The Memory System Controller (MSC) is the program memory unit of the microcontroller. The flash memory is readable and writable from both the Cortex-M and DMA. In addition to the main flash array where Program code is normally written the MSC also provides an Information block where additional information such as special user information or flash-lock bits are stored. There is also a read-only page in the information block containing system and device calibration data. Read and write operations are supported in energy modes EM0 Active and EM1 Sleep.

Linked Direct Memory Access Controller (LDMA)

The Linked Direct Memory Access (LDMA) controller allows the system to perform memory operations independently of software. This reduces both energy consumption and software workload. The LDMA allows operations to be linked together and staged, enabling sophisticated operations to be implemented.

Memory Map

The EFR32BG22 memory map is shown in the figures below. RAM and flash sizes are for the largest memory configuration. Memory map

Configuration Summary

The features of the EFR32BG22 are a subset of the feature set described in the device reference manual. The table below describes device specific implementation of the features. Remaining modules support full configuration.

Configuration Summary

ModuleLowest Energy ModeConfiguration
I2C0EM21 
I2C1EM1 
IADC0EM2 
LETIMER0EM21 
PDMEM12-channel
TIMER0EM132-bit, 3-channels, +DTI
TIMER1EM116-bit, 3-channels, +DTI
TIMER2EM116-bit, 3-channels, +DTI
TIMER3EM116-bit, 3-channels, +DTI
TIMER4EM116-bit, 3-channels, +DTI
EUART0EM1 – Full high-speed operation

EM2– Low-energy operation, 9600 Baud

 
USART0EM1+IrDA, +I2S, +SmartCard
USART1EM1+IrDA, +I2S, +SmartCard
Note:

1. EM2 and EM3 operation is only supported for digital peripheral I/O on Port A and Port B. All GPIO ports support digital peripheral operation in EM0 and EM1.

Electrical Specifications

Electrical Characteristics

All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:

  • Typical values are based on TA=25 °C and all supplies at 3.0 V, by production test and/or technology characterization.
  • Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output pow- er-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.
  • Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature, unless stated otherwise.

Power Supply Pin Dependencies

Due to on-chip circuitry (e.g., diodes), some EFR32 power supply pins have a dependent relationship with one or more other power supply pins. These internal relationships between the external voltages applied to the various EFR32 supply pins are defined below. Exceeding the below constraints can result in damage to the device and/or increased current draw.

  • VREGVDD & DVDD
  • In systems using the DCDC converter, DVDD (the buck converter output) should be connected to the recommended LDCDC and CDCDC, and should not be driven by an off-chip regulator.
  • In systems not using the DCDC converter, DVDD must be shorted to VREGVDD on the PCB (VREGVDD=DVDD)
  • DVDD ≥ DECOUPLE
  • PAVDD ≥ RFVDD
  • AVDD, IOVDD: No dependency with each other or any other supply pin

Absolute Maximum Ratings

Stresses beyond those listed below may cause permanent damage to the device. This is a stress rating only and functional operation of the devices at those or any other conditions beyond those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and relia- bility data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.

Absolute Maximum Ratings

ParameterSymbolTest ConditionMinTypMaxUnit
Storage temperature rangeTSTG -50+150°C
Voltage on any supply pin1VDDMAX -0.33.8V
Junction temperatureTJMAX-G grade+105°C
-I grade+125°C
Voltage ramp rate on any supply pinVDDRAMPMAX 1.0V / µs
Voltage on HFXO pinsVHFXOPIN -0.31.4V
DC voltage on any GPIO pinVDIGPIN -0.3VIOVDD + 0.3V
DC voltage on RESETn pin2VRESETn -0.33.8V
Input RF level on RF pins RF2G4_IOPRFMAX2G4 +10dBm
Absolute voltage on RF pin RF2G4_IOVMAX2G4 -0.3VPAVDD + 0.3V
Total current into VDD power linesIVDDMAXSource200mA
Total current into VSS ground linesIVSSMAXSink200mA
Current per I/O pinIIOMAXSink50mA
Source50mA
Current for all I/O pinsIIOALLMAXSink200mA
Source200mA
Note:
  1. The maximum supply voltage on VREGVDD is limited under certain conditions when using the DC-DC. See the DC-DC specifica- tions for more details.
  2. The RESETn pin has a pull-up device to the DVDD supply. For minimum leakage, RESETn should not exceed the voltage at DVDD.

General Operating Conditions

Table 4.2.  General Operating Conditions

ParameterSymbolTest ConditionMinTypMaxUnit
Operating ambient tempera- ture rangeTA-G temperature grade 1-40+85°C
-I temperature grade 1-40+125° C
DVDD supply voltageVDVDDEM0/11.713.03.8V
EM2/3/421.713.03.8V
AVDD supply voltageVAVDD 1.713.03.8V
IOVDDx operating supply voltage (All IOVDD pins)VIOVDDx 1.713.03.8V
PAVDD operating supply voltageVPAVDD 1.713.03.8V
VREGVDD operating supply voltageVVREGVDDDC-DC in regulation32.23.03.8V
DC-DC in bypass 60 mA load1.83.03.8V
DC-DC not in use. DVDD exter- nally shorted to VREGVDD1.713.03.8V
RFVDD operating supply voltageVRFVDD 1.713.0VPAVDDV
DECOUPLE output capaci- tor4CDECOUPLE1.0 µF ± 10% X8L capacitor used for performance characterization.1.02.75µF
HCLK and SYSCLK frequen- cyfHCLKVSCALE2, MODE = WS176.8MHz
VSCALE2, MODE = WS040MHz
VSCALE1, MODE = WS040MHz
PCLK frequencyfPCLKVSCALE250MHz
VSCALE140MHz
EM01 Group A clock fre- quencyfEM01GRPACLKVSCALE276.8MHz
VSCALE140MHz
EM01 Group B clock fre- quencyfEM01GRPBCLKVSCALE276.8MHz
VSCALE140MHz
Radio HCLK frequency5fRHCLKVSCALE2 or VSCALE138.4MHz
ParameterSymbolTest ConditionMinTypMaxUnit
Note:
  1. The device may operate continuously at the maximum allowable ambient TA rating as long as the absolute maximum TJMAX is not exceeded. For an application with significant power dissipation, the allowable TA may be lower than the maximum TA rating. TA = TJMAX – (THETAJA x PowerDissipation). Refer to the Absolute Maximum Ratings table and the Thermal Characteristics table for TJMAX and THETAJA.
  2. The DVDD supply is monitored by the DVDD BOD in EM0/1 and the LE DVDD BOD in EM2/3/4.
  3. The maximum supply voltage on VREGVDD is limited under certain conditions when using the DC-DC. See the DC-DC specifica- tions for more details.
  4. Murata GCM21BL81C105KA58L used for performance characterization. Actual capacitor values can be significantly de-rated from their specified nominal value by the rated tolerance, as well as the application’s AC voltage, DC bias, and temperature. The minimum capacitance counting all error sources should be no less than 0.6 µF.
  5. The recommended radio crystal frequency is 38.4 MHz. Any crystal frequency other than 38.4 MHz is expressly not supported. See HFXO specifications for more detail on crystal tolerance.

DC-DC Converter

Test conditions: LDCDC = 2.2 µH (Samsung CIG22H2R2MNE), CDCDC = 4.7 µF (Samsung CL10B475KQ8NQNC), VVREGVDD = 3.0 V,
VOUT = 1.8 V, IPKVAL in EM0/1 modes is set to 150 mA, and in EM2/3 modes is set to 90 mA, unless otherwise indicated.

Table 4.3.  DC-DC Converter

ParameterSymbolTest ConditionMinTypMaxUnit
Input voltage range at VREGVDD pin1VVREGVDDDCDC in regulation, ILOAD = 60 mA, EM0/EM1 mode2.23.03.8*V
DCDC in regulation, ILOAD = 5 mA, EM0/EM1 or EM2/EM3 mode1.83.03.8*V
Bypass mode1.83.03.8V
Regulated output voltageVOUT 1.8V
Regulation DC accuracyACCDCVVREGVDD ≥ 2.2 V, Steady state in EM0/EM1 mode or EM2/EM3 mode-2.53.3%
Regulation total accuracyACCTOTWith mode transitions between EM0/EM1 and EM2/EM3 modes-57%
Steady-state output rippleVRILOAD = 20 mA in EM0/EM1 mode14.3mVpp
DC line regulationVREGILOAD = 60 mA in EM0/EM1 mode, VVREGVDD ≥ 2.2 V5.5mV/V
DC load regulationIREGLoad current between 100 µA and 60 mA in EM0/EM1 mode0.27mV/mA
EfficiencyEFFLoad current between 100 µA and 60 mA in EM0/EM1 mode, or be- tween 10 µA and 5 mA in EM2/EM3 mode91%
Output load currentILOADEM0/EM1 mode, DCDC in regulation60mA
EM2/EM3 mode, DCDC in regulation5mA
Bypass mode60mA
Nominal output capacitorCDCDC4.7 µF ± 10% X7R capacitor used for performance characterization24.710µF
Nominal inductorLDCDC± 20% tolerance2.2µH
Nominal input capacitorCIN CDCDCµF
Resistance in bypass modeRBYPBypass switch from VREGVDD to DVDD, VVREGVDD = 1.8 V1.753
Powertrain PFET switch from VREGVDD to VREGSW, VVREGVDD = 1.8 V0.861.5
Supply monitor threshold programming rangeVCMP_RNGProgrammable in 0.1 V steps2.02.3V
Supply monitor threshold ac- curacyVCMP_ACCSupply falling edge trip point-55%
ParameterSymbolTest ConditionMinTypMaxUnit
Supply monitor threshold hysteresisVCMP_HYSTPositive hysteresis on the supply rising edge referred to the falling edge trip point4%
Supply monitor response timetCMP_DELAYSupply falling edge at -100 mV /

µs

0.6µs
Note:
  1. The supported maximum VVREGVDD in regulation mode is a function of temperature and 10-year lifetime average load current. See more details in 4.4.1 DC-DC Operating Limits.
  2. Samsung CL10B475KQ8NQNC used for performance characterization. Actual capacitor values can be significantly de-rated from their specified nominal value by the rated tolerance, as well as the application’s AC voltage, DC bias, and temperature. The mini- mum capacitance counting all error sources should be no less than 2.4 µF.

DC-DC Operating Limits

The maximum supported voltage on the VREGVDD supply pin is limited under certain conditions. Maximum input voltage is a function of temperature and the average load current over a 10-year lifetime. Figure 4.1 Lifetime average load current limit vs. Maximum input voltage on page 23 shows the safe operating region under specific conditions. Exceeding this safe operating range may impact the reliability and performance of the DC-DC converter.

The average load current for an application can typically be determined by examining the current profile during the time the device is powered. For example, an application that is continuously powered which spends 99% of the time asleep consuming 2 µA and 1% of the time active and consuming 10 mA has an average lifetime load current of about 102 µA.

DC

Figure 4.1. Lifetime average load current limit vs. Maximum input voltage
The minimum input voltage for the DC-DC in EM0/EM1 mode is a function of the maximum load current, and the peak current setting. Figure 4.2 Transient maximum load current vs. Minimum input voltage on page 23 shows the max load current vs. input voltage for different DC-DC peak inductor current settings.

DC 2

Thermal Characteristics

Table 4.4.  Thermal Characteristics

ParameterSymbolTest ConditionMinTypMaxUnit
Thermal Resistance Junction to Ambient QFN32 (4x4mm) PackageTHE- TAJA_QFN32_4X44-Layer PCB, Natural Convection135.4°C/W
Thermal Resistance Junction to Ambient TQFN32 (4x4mm) PackageTHE-

TAJA_TQFN32_4X 4

4-Layer PCB, Natural Convection140.2°C/W
Thermal Resistance, Junc- tion to Ambient, QFN40 (5x5mm) PackageTHE- TAJA_QFN40_5X54-Layer PCB, Natural Convection132.6°C/W
Note:

1. Measured according to JEDEC standard JESD51-2A. Integrated Circuit Thermal Test Method Environmental Conditions – Natural Convection (Still Air).

Current Consumption

MCU current consumption using DC-DC at 3.0 V input

Unless otherwise indicated, typical conditions are: VREGVDD = 3.0 V. AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8 V from DC- DC. Voltage scaling level = VSCALE1. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.

Table 4.5. MCU current consumption using DC-DC at 3.0 V input

ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM0 mode with all peripherals dis- abledIACTIVE76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running Prime from flash, VSCALE228µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running while loop from flash, VSCALE227µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running CoreMark loop from flash, VSCALE237µA/MHz
38.4 MHz crystal, CPU running Prime from flash28µA/MHz
38.4 MHz crystal, CPU running while loop from flash26µA/MHz
38.4 MHz crystal, CPU running CoreMark loop from flash38µA/MHz
38 MHz HFRCO, CPU running while loop from flash22µA/MHz
26 MHz HFRCO, CPU running while loop from flash24µA/MHz
16 MHz HFRCO, CPU running while loop from flash27µA/MHz
1 MHz HFRCO, CPU running while loop from flash159µA/MHz
Current consumption in EM1 mode with all peripherals dis- abledIEM176.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, VSCALE217µA/MHz
38.4 MHz crystal17µA/MHz
38 MHz HFRCO13µA/MHz
26 MHz HFRCO15µA/MHz
16 MHz HFRCO18µA/MHz
1 MHz HFRCO150µA/MHz
ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM2 mode, VSCALE0IEM2_VSFull RAM retention and RTC run- ning from LFXO1.40µA
Full RAM retention and RTC run- ning from LFRCO1.40µA
Full RAM retention and RTC run- ning from LFRCO in precision mode1.75µA
24 kB RAM retention and RTC running from LFXO1.32µA
24 kB RAM retention and RTC running from LFRCO in precision mode1.66µA
8 kB RAM retention and RTC run- ning from LFXO1.21µA
8 kB RAM retention and RTC run- ning from LFRCO1.20µA
8 kB RAM retention and RTC run- ning from LFXO, Radio RAM and CPU cache not retained1.03µA
Current consumption in EM3 mode, VSCALE0IEM3_VS8 kB RAM retention and RTC run- ning from ULFRCO1.05µA
Additional current in EM2 or EM3 when any peripheral in PD0B is enabled1IPD0B_VS 0.37µA
Note:

1. Extra current consumed by power domain. Does not include current associated with the enabled peripherals. See for a list of the peripherals in each power domain.

MCU current consumption at 3.0 V

Unless otherwise indicated, typical conditions are: AVDD = DVDD = RFVDD = PAVDD = VREGVDD = 3.0 V. DC-DC not used. Voltage scaling level = VSCALE1. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.

ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM0 mode with all peripherals dis- abledIACTIVE76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running Prime from flash, VSCALE242µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running while loop from flash, VSCALE239µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running CoreMark loop from flash, VSCALE254µA/MHz
38.4 MHz crystal, CPU running Prime from flash40µA/MHz
38.4 MHz crystal, CPU running while loop from flash39µA/MHz
38.4 MHz crystal, CPU running CoreMark loop from flash55µA/MHz
38 MHz HFRCO, CPU running while loop from flash3350µA/MHz
26 MHz HFRCO, CPU running while loop from flash35µA/MHz
16 MHz HFRCO, CPU running while loop from flash40µA/MHz
1 MHz HFRCO, CPU running while loop from flash228830µA/MHz
Current consumption in EM1 mode with all peripherals dis- abledIEM176.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, VSCALE224µA/MHz
38.4 MHz crystal25µA/MHz
38 MHz HFRCO1935µA/MHz
26 MHz HFRCO21µA/MHz
16 MHz HFRCO27µA/MHz
1 MHz HFRCO215770µA/MHz
ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM2 mode, VSCALE0IEM2_VSFull RAM retention and RTC run- ning from LFXO1.94µA
Full RAM retention and RTC run- ning from LFRCO1.954.9µA
24 kB RAM retention and RTC running from LFXO1.81µA
24 kB RAM retention and RTC running from LFRCO in precision mode2.34µA
8 kB RAM retention and RTC run- ning from LFXO1.64µA
8 kB RAM retention and RTC run- ning from LFRCO1.65µA
8 kB RAM retention and RTC run- ning from LFXO, Radio RAM and CPU cache not retained1.39µA
Current consumption in EM3 mode, VSCALE0IEM3_VS8 kB RAM retention and RTC run- ning from ULFRCO1.413.7µA
Current consumption in EM4 modeIEM4No BURTC, no LF oscillator0.170.43µA
BURTC with LFXO0.50µA
Current consumption during resetIRSTHard pin reset held234µA
Additional current in EM2 or EM3 when any peripheral in PD0B is enabled1IPD0B_VS 0.56µA
Note:

1. Extra current consumed by power domain. Does not include current associated with the enabled peripherals. See for a list of the peripherals in each power domain.

MCU current consumption at 1.8 V

Unless otherwise indicated, typical conditions are: AVDD = DVDD = RFVDD = PAVDD = VREGVDD = 1.8 V. DC-DC not used. Voltage scaling level = VSCALE1. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.

MCU current consumption at 1.8 V

ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM0 mode with all peripherals dis- abledIACTIVE76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running Prime from flash, VSCALE242µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running while loop from flash, VSCALE239µA/MHz
76.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, CPU running CoreMark loop from flash, VSCALE254µA/MHz
38.4 MHz crystal, CPU running Prime from flash41µA/MHz
38.4 MHz crystal, CPU running while loop from flash39µA/MHz
38.4 MHz crystal, CPU running CoreMark loop from flash55µA/MHz
38 MHz HFRCO, CPU running while loop from flash33µA/MHz
26 MHz HFRCO, CPU running while loop from flash35µA/MHz
16 MHz HFRCO, CPU running while loop from flash40µA/MHz
1 MHz HFRCO, CPU running while loop from flash227µA/MHz
Current consumption in EM1 mode with all peripherals dis- abledIEM176.8 MHz HFRCO w/ DPLL refer- enced to 38.4 MHz crystal, VSCALE224µA/MHz
38.4 MHz crystal25µA/MHz
38 MHz HFRCO19µA/MHz
26 MHz HFRCO21µA/MHz
16 MHz HFRCO27µA/MHz
1 MHz HFRCO213µA/MHz
ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM2 mode, VSCALE0IEM2_VSFull RAM retention and RTC running from LFXO1.87µA
Full RAM retention and RTC running from LFRCO1.86µA
24 kB RAM retention and RTC running from LFXO1.73µA
24 kB RAM retention and RTC running from LFRCO in precision mode2.26µA
8 kB RAM retention and RTC running from LFXO1.57µA
8 kB RAM retention and RTC running from LFRCO1.56µA
8 kB RAM retention and RTC running from LFXO, Radio RAM and CPU cache not retained1.32µA
Current consumption in EM3 mode, VSCALE0IEM3_VS8 kB RAM retention and RTC running from ULFRCO1.34µA
Current consumption in EM4 modeIEM4No BURTC, no LF oscillator0.13µA
BURTC with LFXO0.44µA
Current consumption during resetIRSTHard pin reset held190µA
Additional current in EM2 or EM3 when any peripheral in PD0B is enabled1IPD0B_VS 0.54µA
Note:

1. Extra current consumed by power domain. Does not include current associated with the enabled peripherals. See for a list of the peripherals in each power domain.

Radio current consumption at 3.0V using DCDC

RF current consumption measured with MCU in EM1, HCLK = 38.4 MHz, and all MCU peripherals disabled. Unless otherwise indica- ted, typical conditions are: VREGVDD = 3.0V. AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8 V powered from DCDC. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.

Radio current consumption at 3.0V using DCDC

ParameterSymbolTest ConditionMinTypMaxUnit
System current consumption in receive mode, active pack- et receptionIRX_ACTIVE125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.7mA
125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.0mA
125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.1mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.8mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.0mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.2mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.6mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE13.8mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE23.9mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)4.0mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.2mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.4mA
ParameterSymbolTest ConditionMinTypMaxUnit
System current consumption in receive mode, listening for packetIRX_LISTEN125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.8mA
125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.0mA
125 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.1mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.8mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.0mA
500 kbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.1mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)3.6mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE13.8mA
1 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.0mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE1, EM1P (Radio clocks only)4.1mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE14.3mA
2 Mbit/s, 2GFSK, f = 2.4 GHz, VSCALE24.5mA
System current consumption in transmit modeITXf = 2.4 GHz, CW, 0 dBm PA, 0

dBm output power, VSCALE1, EM1P (Radio clocks only)

4.1mA
f = 2.4 GHz, CW, 6 dBm PA, 6

dBm output power, VSCALE1, EM1P (Radio clocks only)

8.2mA
f = 2.4 GHz, CW, 0 dBm PA, 0

dBm output power, VSCALE1

4.3mA
f = 2.4 GHz, CW, 6 dBm PA, 6

dBm output power, VSCALE1

8.4mA
f = 2.4 GHz, CW, 0 dBm PA, 0

dBm output power, VSCALE2

4.4mA
f = 2.4 GHz, CW, 6 dBm PA, 6

dBm output power, VSCALE2

8.5mA

Flash Characteristic

Table 4.9.  Flash Characteristics

ParameterSymbolTest ConditionMinTypMaxUnit
Flash Supply voltage during write or eraseVFLASH 1.713.8V
Flash erase cycles before failure1ECFLASHTA ≤ 125 °C10,000cycles
Flash data retention1RETFLASHTA ≤ 125 °C10years
Program TimetPROGone word (32-bits)42.14445.6uSec
average per word over 128 words10.310.911.3uSec
Page Erase TimetPERASE 11.412.914.4ms
Mass Erase TimetMERASEErases all of User Code area11.71314.3ms
Program CurrentIPROG 1.45mA
Page Erase CurrentIPERASEPage Erase1.34mA
Mass Erase CurrentIMERASEMass Erase1.28mA
Note:

1. Flash data retention information is published in the Quarterly Quality and Reliability Report.

Wake Up, Entry, and Exit times

Unless otherwise specified, these times are measured using the HFRCO at 19 MHz.

Table 4.10.  Wake Up, Entry, and Exit times

ParameterSymbolTest ConditionMinTypMaxUnit
WakeupTime from EM1tEM1_WUCode execution from flash3AHB

Clocks

Code execution from RAM1.42µs
WakeupTime from EM2tEM2_WUCode execution from flash, No Voltage Scaling13.22µs
Code execution from RAM, No Voltage Scaling5.15µs
Voltage scaling up one level137.89µs
Voltage scaling up two levels250.56µs
WakupTime from EM3tEM3_WUCode execution from flash, No Voltage Scaling13.21µs
Code execution from RAM, No Voltage Scaling5.15µs
Voltage scaling up one level137.90µs
Voltage scaling up two levels250.55µs
WakeupTime from EM4tEM4_WUCode execution from flash8.81ms
Entry time to EM1tEM1_ENTCode execution from flash1.29µs
Entry time to EM2tEM2_ENTCode execution from flash5.23µs
Entry time to EM3tEM3_ENTCode execution from flash5.23µs
Entry time to EM4tEM4_ENTCode execution from flash9.96µs
Voltage scaling in time in EM03tSCALEUp from VSCALE1 to VSCALE232µs
Down from VSCALE2 to VSCALE1172µs
Note:
  1. Voltage scaling one level is between VSCALE0 and VSCALE1 or between VSCALE1 and VSCALE2.
  2. Voltage scaling two levels is between VSCALE0 and VSCALE2.
  3. During voltage scaling in EM0, RAM is inaccessible and processor will be halted until complete.

RFSENSE Low-energy Wake-on-RF

Table 4.11. RFSENSE Low-energy Wake-on-RF

ParameterSymbolTest ConditionMinTypMaxUnit
Average currentIRFSENSERF energy below wake threshold138nA
Selective mode, RF energy above threshold but no OOK sync detec- ted131nA
RF level above which RFSENSE will detect signal1THRESTRIGThreshold set to -34 dBm-28dBm
Threshold set to -22 dBm-19dBm
RF level below which RFSENSE will not detect sig- nal1THRESNOTRIGThreshold set to -34 dBm-40dBm
Threshold set to -22 dBm-26dBm
Sensitivity in selective OOK mode1SENSOOKSensitivity for > 90% probability of OOK detection2, threshold set to

-34 dBm

-28dBm
Sensitivity for > 90% probability of OOK detection2, threshold set to

-22 dBm

-19dBm
Note:
  1. Values collected with conducted measurements performed at the end of the matching network.
  2. Selective wake signal is 1 kHz OOK Manchester-coded, 8 bits of preamble, 32-bit sync word.

2.4 GHz RF Transceiver Characteristics

RF Transmitter Characteristics

RF Transmitter General Characteristics for the 2.4 GHz Band Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.12. RF Transmitter General Characteristics for the 2.4 GHz Band

ParameterSymbolTest ConditionMinTypMaxUnit
RF tuning frequency rangeFRANGE 24002483.5MHz
Radio-only current consump- tion while transmitting1ITX_RADIOf = 2.4 GHz, CW, 0 dBm PA, 0

dBm output power

3.4mA
f = 2.4 GHz, CW, 6 dBm PA, 6

dBm output power

7.5mA
Maximum TX power2POUTMAX6 dBm PA36dBm
0 dBm PA0dBm
Minimum active TX powerPOUTMIN6 dBm PA-27dBm
0 dBm PA-28dBm
Output power variation vs supply voltage variation, fre- quency = 2450 MHzPOUTVAR_V6 dBm PA output power, using DCDC with VREGVDD swept from 1.8 to 3.0 V0.04dB
0 dBm PA output power, using DCDC with VREGVDD swept from 1.8 to 3.0 V0.03dB
Output power variation vs temperature, Frequency = 2450 MHzPOUTVAR_T6 dBm PA at 6 dBm, (-40 to +125

°C)

0.18dB
0 dBm PA at 0 dBm, (-40 to +125

°C)

1.4dB
6 dBm PA at 6 dBm, (-40 to +85

°C)

0.17dB
0 dBm PA at 0 dBm, (-40 to +85

°C)

1.0dB
Output power variation vs RF frequencyPOUTVAR_F6 dBm PA, 6 dBm0.20dB
0 dBm PA, 0 dBm0.19dB
Spurious emissions of har- monics in restricted bands per FCC Part 15.205/15.209SPURHRM_FCC_ RContinuous transmission of CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz.-47dBm
ParameterSymbolTest ConditionMinTypMaxUnit
Spurious emissions out-of- band (above 2.483 GHz or below 2.4 GHz) in restricted bands, per FCC part 15.205/15.209SPUROOB_FCC_ RRestricted bands 30-88 MHz, Continuous transmission of CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz-47dBm
Restricted bands 88 – 216 MHz, Continuous transmission of CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz-47dBm
Restricted bands 216 – 960 MHz, Continuous transmission of CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz-47dBm
Restricted bands > 960 MHz, Continuous transmission of CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz-47dBm
Spurious emissions out-of- band in non-restricted bands per FCC Part 15.247SPUROOB_FCC_ NRFrequencies above 2.483 GHz or below 2.4 GHz, continuous trans- mission CW carrier, Pout = POUTMAX, Test Frequency = 2450 MHz-26dBc
Spurious emissions per ETSI EN300.440SPURETSI44047-74 MHz,87.5-108 MHz,

174-230 MHz, 470-862 MHz, Pout

= POUTMAX, Test Frequency = 2450 MHz

-60dBm
25-1000 MHz, excluding above frequencies. Pout = POUTMAX, Test Frequency = 2450 MHz-42dBm
1G-14G, Pout = POUTMAX, Test

Frequency = 2450 MHz

-36dBm
Spurious emissions out-of- band, per ETSI 300.328SPURETSI328[2400-2BW to 2400-BW], [2483.5+BW to 2483.5+2BW],

Pout = POUTMAX, Test Frequency

= 2450 MHz

-26dBm
47-74 MHz, 87.5-118 MHz,

174-230 MHz, 470-862 MHz, Pout

= POUTMAX, Test Frequency = 2450 MHz

-60dBm
30-47 MHz, 74-87.5 MHz,

118-174 MHz, 230-470 MHz,

862-1000 MHz , Pout = POUTMAX,

Test Frequency = 2450 MHz

-42dBm
1G-12.75 GHz, excluding bands listed above, Pout = POUTMAX, Test Frequency = 2450 MHz-36dBm
[2400-BW to 2400], [2483.5 to 2483.5+BW] Pout = POUTMAX,

Test Frequency = 2450 MHz

-16dBm
ParameterSymbolTest ConditionMinTypMaxUnit
Note:
  1. Supply current to radio, supplied by DC-DC with 3.0 V, measured at VREGVDD.
  2. Supported transmit power levels are determined by the ordering part number (OPN). Transmit power ratings for all devices cov- ered in this data sheet can be found in the Max TX Power column of the Ordering Information Table.
  3. The PA is capable of delivering higher than 6 dBm output power (see Figure 4.9 Transmitter Output Power on page 71). How- ever, all transmitter characteristics and recommended application circuits are specified at 6 dBm output. If used with the recom- mended application circuits above 6 dBm, harmonics may be higher than regulatory limits.
  1. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.13. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Transmit 6 dB bandwidthTXBWPout = 6 dBm630kHz
Pout = 0 dBm640kHz
Power spectral density limitPSDLIMITPout = 6 dBm, Per FCC part

15.247 at 6 dBm

2.9dBm/ 3kHz
Pout = 0 dBm, Per FCC part

15.247 at 0 dBm

-3.2dBm/ 3kHz
Per ETSI 300.328 at 10 dBm/1 MHz7.1dBm
Occupied channel bandwidth per ETSI EN300.328OCPETSI328Pout = 6 dBm 99% BW at highest and lowest channels in band1.1MHz
Pout = 0 dBm 99% BW at highest and lowest channels in band1.1MHz
In-band spurious emissions, with allowed exceptions1SPURINBPout = 6 dbm, Inband spurs at ± 2 MHz-41dBm
Pout = 0 dbm, Inband spurs at ± 2 MHz-48dBm
Pout = 6 dBm Inband spurs at ± 3 MHz-47dBm
Pout = 0dbm Inband spurs at ± 3 MHz-54dBm
Note:

1. Per Bluetooth Core_5.1, Vol.6 Part A, Section 3.2.2, exceptions are allowed in up to three bands of 1 MHz width, centered on a frequency which is an integer multiple of 1 MHz. These exceptions shall have an absolute value of -20 dBm or less.

  1. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.14. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Transmit 6 dB bandwidthTXBWPout = 6 dBm1250kHz
Pout = 0 dBm1220kHz
Power spectral density limitPSDLIMITPout = 6 dBm, Per FCC part

15.247 at 6 dBm

0.5dBm/ 3kHz
Pout = 0 dBm, Per FCC part

15.247 at 0 dBm

-5.7dBm/ 3kHz
Per ETSI 300.328 at 10 dBm/1 MHz6.3dBm
Occupied channel bandwidth per ETSI EN300.328OCPETSI328Pout = 6 dBm 99% BW at highest and lowest channels in band2.1MHz
Pout = 0 dBm 99% BW at highest and lowest channels in band2.1MHz
In-band spurious emissions, with allowed exceptions1SPURINBPout = 6 dbm, Inband spurs at ± 4 MHz-41dBm
Pout = 0 dBm, Inband spurs at ± 4 MHz-47dBm
Pout = 6 dBm Inband spurs at ± 6 MHz-46dBm
Pout = 0 dbm Inband spurs at ± 6 MHz-53dBm
Note:

1. Per Bluetooth Core_5.1, Vol.6 Part A, Section 3.2.2, exceptions are allowed in up to three bands of 1 MHz width, centered on a frequency which is an integer multiple of 1 MHz. These exceptions shall have an absolute value of -20 dBm or less.

  1. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.15. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Transmit 6 dB bandwidthTXBWPout = 6 dBm640kHz
Pout = 0 dBm650kHz
Power spectral density limitPSDLIMITPout = 6 dBm, Per FCC part

15.247 at 6 dBm

2.8dBm/ 3kHz
Pout = 0 dBm, Per FCC part

15.247 at 0 dBm

-3.5dBm/ 3kHz
Per ETSI 300.328 at 10 dBm/1 MHz7.1dBm
Occupied channel bandwidth per ETSI EN300.328OCPETSI328Pout = 6 dBm 99% BW at highest and lowest channels in band1.1MHz
Pout = 0 dBm 99% BW at highest and lowest channels in band1.1MHz
In-band spurious emissions, with allowed exceptions1SPURINBPout = 6 dbm, Inband spurs at ± 2 MHz-41dBm
Pout = 0 dbm, Inband spurs at ± 2 MHz-48dBm
Pout = 6 dBm Inband spurs at ± 3 MHz-47dBm
Pout = 0dbm Inband spurs at ± 3 MHz-54dBm
Note:

1. Per Bluetooth Core_5.1, Vol.6 Part A, Section 3.2.2, exceptions are allowed in up to three bands of 1 MHz width, centered on a frequency which is an integer multiple of 1 MHz. These exceptions shall have an absolute value of -20 dBm or less.

  1. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.16. RF Transmitter Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Transmit 6 dB bandwidthTXBWPout = 6 dBm600kHz
Pout = 0 dBm600kHz
Power spectral density limitPSDLIMITPout = 6 dBm, Per FCC part

15.247 at 6 dBm

2.0dBm/ 3kHz
Pout = 0 dBm, Per FCC part

15.247 at 0 dBm

-4.2dBm/ 3kHz
Per ETSI 300.328 at 10 dBm/1 MHz7.1dBm
Occupied channel bandwidth per ETSI EN300.328OCPETSI328Pout = 6 dBm 99% BW at highest and lowest channels in band1.1MHz
Pout = 0 dBm 99% BW at highest and lowest channels in band1.1MHz
In-band spurious emissions, with allowed exceptions1SPURINBPout = 6 dbm, Inband spurs at ± 2 MHz-41dBm
Pout = 0 dbm, Inband spurs at ± 2 MHz-47dBm
Pout = 6 dBm Inband spurs at ± 3 MHz-47dBm
Pout = 0dbm Inband spurs at ± 3 MHz-54dBm
Note:

1. Per Bluetooth Core_5.1, Vol.6 Part A, Section 3.2.2, exceptions are allowed in up to three bands of 1 MHz width, centered on a frequency which is an integer multiple of 1 MHz. These exceptions shall have an absolute value of -20 dBm or less.

  1. RF Transmitter Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.17. RF Transmitter Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band

ParameterSymbolTest ConditionMinTypMaxUnit
Error vector magnitude per 802.15.4-2011EVMAverage across frequency, signal is DSSS-OQPSK reference pack- et, Pout = 6 dBm3.0% rms
Average across frequency, signal is DSSS-OQPSK reference pack- et, Pout = 0 dBm3.0% rms
Power spectral density limitPSDLIMITRelative, at carrier ± 3.5 MHz, Pout = 6 dBm-50.7dBc/ 100kHz
Relative, at carrier ± 3.5 MHz, Pout = 0 dBm-50.8dBc/ 100kHz
Absolute, at carrier ± 3.5 MHz, Pout = 6 dBm-52.5dBm/ 100kHz
Absolute, at carrier ± 3.5 MHz, Pout = 0 dBm-58.3dBm/ 100kHz
Per FCC part 15.247, Pout = 6 dBm-1.4dBm/ 3kHz
Per FCC part 15.247, Pout = 0 dBm-7.4dBm/ 3kHz
ETSI 300.328 Pout = 6 dBm5.6dBm
ETSI 300.328 Pout = 0 dbm-1.0dBm
Occupied channel bandwidth per ETSI EN300.328OCPETSI32899% BW at highest and lowest channels in band, Pout = 6 dBm2.2MHz
99% BW at highest and lowest channels in band, Pout = 0 dBm2.2MHz

RF Receiver Characteristics

  1. RF Receiver General Characteristics for the 2.4 GHz Band

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.18. RF Receiver General Characteristics for the 2.4 GHz Band

ParameterSymbolTest ConditionMinTypMaxUnit
RF tuning frequency rangeFRANGE 24002483.5MHz
Radio-only current consump- tion in receive mode1IRX_RADIO 2.5mA
Receive mode maximum spurious emissionSPURRX30 MHz to 1 GHz-63dBm
1 GHz to 12 GHz-53dBm
Max spurious emissions dur- ing active receive mode, per FCC Part 15.109(a)SPURRX_FCC216 MHz to 960 MHz, conducted measurement-47dBm
Above 960 MHz, conducted measurement.-47dBm
2GFSK SensitivitySENS2GFSK2 Mbps 2GFSK signal, 1% PER-93dBm
250 kbps 2GFSK signal, 0.1% BER-104dBm
Note:

1. Supply current to radio, supplied by DC-DC with 3.0 V, measured at VREGVDD.

  1. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz, Packet length is 255 bytes.

Table 4.19. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Max usable receiver input levelSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload2-98.9dBm
Signal is reference signal, 255 byte payload1-97.4dBm
With non-ideal signals1-96.9dBm
Signal to co-channel interfer- erC/ICC(see notes)48.7dB
N ± 1 Adjacent channel se- lectivityC/I1Interferer is reference signal at +1 MHz offset6-6.6dB
Interferer is reference signal at -1 MHz offset6-6.5dB
N ± 2 Alternate channel se- lectivityC/I2Interferer is reference signal at +2 MHz offset6-40.9dB
Interferer is reference signal at -2 MHz offset6-39.9dB
N ± 3 Alternate channel se- lectivityC/I3Interferer is reference signal at +3 MHz offset6-45.9dB
Interferer is reference signal at -3 MHz offset6-46.2dB
Selectivity to image frequen- cyC/IIMInterferer is reference signal at im- age frequency with 1 MHz preci- sion6-23.5dB
Selectivity to image frequen- cy ± 1 MHzC/IIM_1Interferer is reference signal at im- age frequency +1 MHz with 1

MHz precision6

-40.9dB
Interferer is reference signal at im- age frequency -1 MHz with 1 MHz precision6-6.6dB
Intermodulation performanceIMn = 3 (see note7)-17.1dBm
Note:
  1. 0.017% Bit Error Rate.
  2. 0.1% Bit Error Rate.
  3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  4. Desired signal -67 dBm.
  5. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  6. With allowed exceptions.
  7. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
  1. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz, Packet length is 255 bytes.

Table 4.20. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Max usable receiver input levelSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload2-96.2dBm
Signal is reference signal, 255 byte payload1-94.6dBm
With non-ideal signals1-94.4dBm
Signal to co-channel interfer- erC/ICC(see notes)48.8dB
N ± 1 Adjacent channel se- lectivityC/I1Interferer is reference signal at +2 MHz offset6-9.2dB
Interferer is reference signal at -2 MHz offset6-6.6dB
N ± 2 Alternate channel se- lectivityC/I2Interferer is reference signal at +4 MHz offset6-43.3dB
Interferer is reference signal at -4 MHz offset6-44.0dB
N ± 3 Alternate channel se- lectivityC/I3Interferer is reference signal at +6 MHz offset6-48.6dB
Interferer is reference signal at -6 MHz offset6-50.7dB
Selectivity to image frequen- cyC/IIMInterferer is reference signal at im- age frequency with 1 MHz preci- sion6-23.8dB
Selectivity to image frequen- cy ± 2 MHzC/IIM_1Interferer is reference signal at im- age frequency +2 MHz with 1

MHz precision6

-43.3dB
Interferer is reference signal at im- age frequency -2 MHz with 1 MHz precision6-9.2dB
Intermodulation performanceIMn = 3 (see note7)-18.8dBm
Note:
  1. 0.017% Bit Error Rate.
  2. 0.1% Bit Error Rate.
  3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  4. Desired signal -64 dBm.
  5. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  6. With allowed exceptions.
  7. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
  1. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz, Packet length is 255 bytes.

Table 4.21. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Max usable receiver input levelSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload2-102.5dBm
Signal is reference signal, 255 byte payload1-101.2dBm
With non-ideal signals1-100.2dBm
Signal to co-channel interfer- erC/ICC(see notes)42.7dB
N ± 1 Adjacent channel se- lectivityC/I1Interferer is reference signal at +1 MHz offset6-8.0dB
Interferer is reference signal at -1 MHz offset6-7.9dB
N ± 2 Alternate channel se- lectivityC/I2Interferer is reference signal at +2 MHz offset6-46.5dB
Interferer is reference signal at -2 MHz offset6-49.9dB
N ± 3 Alternate channel se- lectivityC/I3Interferer is reference signal at +3 MHz offset6-48.9dB
Interferer is reference signal at -3 MHz offset6-53.8dB
Selectivity to image frequen- cyC/IIMInterferer is reference signal at im- age frequency with 1 MHz preci- sion6-48.3dB
Selectivity to image frequen- cy ± 1 MHzC/IIM_1Interferer is reference signal at im- age frequency +1 MHz with 1

MHz precision6

-49.9dB
Interferer is reference signal at im- age frequency -1 MHz with 1 MHz precision6-46.5dB
Note:
  1. 0.017% Bit Error Rate.
  2. 0.1% Bit Error Rate.
  3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  4. Desired signal -72 dBm.
  5. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  6. With allowed exceptions.
  1. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz, Packet length is 255 bytes.

Table 4.22. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate

ParameterSymbolTest ConditionMinTypMaxUnit
Max usable receiver input levelSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload2-106.7dBm
Signal is reference signal, 255 byte payload1-106.4dBm
With non-ideal signals1-105.8dBm
Signal to co-channel interfer- erC/ICC(see notes)40.9dB
N ± 1 Adjacent channel se- lectivityC/I1Interferer is reference signal at +1 MHz offset6-13.6dB
Interferer is reference signal at -1 MHz offset6-13.4dB
N ± 2 Alternate channel selectivityC/I2Interferer is reference signal at +2 MHz offset6-52.6dB
Interferer is reference signal at -2 MHz offset6-55.8dB
N ± 3 Alternate channel selectivityC/I3Interferer is reference signal at +3 MHz offset6-53.7dB
Interferer is reference signal at -3 MHz offset6-59.0dB
Selectivity to image frequencyC/IIMInterferer is reference signal at im- age frequency with 1 MHz preci- sion6-52.7dB
Selectivity to image frequen- cy ± 1 MHzC/IIM_1Interferer is reference signal at im- age frequency +1 MHz with 1

MHz precision6

-53.7dB
Interferer is reference signal at im- age frequency -1 MHz with 1 MHz precision6-52.6dB
Note:
  1. 0.017% Bit Error Rate.
  2. 0.1% Bit Error Rate.
  3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  4. Desired signal -79 dBm.
  5. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  6. With allowed exceptions.
  1. RF Receiver Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band

Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V, AVDD = DVDD = IOVDD = RFVDD = PAVDD = 1.8  V powered from DCDC. Crystal frequency=38.4 MHz. RF center frequency 2.45 GHz.

Table 4.23. RF Receiver Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band

ParameterSymbolTest ConditionMinTypMaxUnit
Max usable receiver input level, 1% PERSATSignal is reference signal1. Packet length is 20 octets10dBm
Sensitivity, 1% PERSENSSignal is reference signal. Packet length is 20 octets-102.3dBm
Co-channel interferer rejec- tion, 1% PERCCRDesired signal 3 dB above sensi- tivity limit-1.7dB
High-side adjacent channel rejection, 1% PER. Desired is reference signal at 3 dB above reference sensitivity level2ACRP1Interferer is reference signal at +1 channel-spacing34.9dB
Low-side adjacent channel rejection, 1% PER. Desired is reference signal at 3 dB above reference sensitivity level2ACRM1Interferer is reference signal at -1 channel-spacing34.8dB
Alternate channel rejection, 1% PER. Desired is refer- ence signal at 3 dB above reference sensitivity level2ACR2Interferer is reference signal at ± 2 channel-spacing47.1dB
Image rejection , 1% PER. Desired is reference signal at 3 dB above reference sensi- tivity level2IRInterferer is CW in image band334.1dB
Blocking rejection of all other channels, 1% PER. Desired is reference signal at 3 dB above reference sensitivity level2. Interferer is reference signalBLOCKInterferer frequency < Desired fre- quency – 3 channel-spacing53.2dB
Interferer frequency > Desired fre- quency + 3 channel-spacing53.1dB
RSSI resolutionRSSIRES-100 dBm to +5 dBm0.25dB
RSSI accuracy in the linear region as defined by 802.15.4-2003RSSILIN +/-6dB
Note:
  1. Reference signal is defined as O-QPSK DSSS per 802.15.4, Frequency range = 2400-2483.5 MHz, Symbol rate = 62.5 ksym- bols/s.
  2. Reference sensitivity level is -85 dBm.
  3. Due to low-IF frequency, there is some overlap of adjacent channel and image channel bands. Adjacent channel CW blocker tests place the Interferer center frequency at the Desired frequency ± 5 MHz on the channel raster, whereas the image rejection test places the CW interferer near the image frequency of the Desired signal carrier, regardless of the channel raster.

Oscillators

High Frequency Crystal Oscillator

Unless otherwise indicated, typical conditions are: AVDD = DVDD = 3.0 V. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation, operating supply voltage range, and operating temperature range.

Table 4.24.  High Frequency Crystal Oscillator       

ParameterSymbolTest ConditionMinTypMaxUnit
Crystal FrequencyFHFXOsee note138.4MHz
Supported crystal equivalent series resistance (ESR)ESRHFXO_38M438.4 MHz, CL = 10 pF34060
Supported range of crystal load capacitance4CHFXO_LC38.4 MHz, ESR = 40 Ohm310pF
Supply CurrentIHFXO 415µA
Startup TimeTSTARTUP38.4 MHz, ESR = 40 Ohm, CL = 10 pF160µs
On-chip tuning cap step size5SSHFXO 0.04pF
Note:
  1. The BLE radio requires a 38.4 MHz crystal with a tolerance of ± 50 ppm over temperature and aging. Please use the recommen- ded crystal.
  2. The crystal should have a maximum ESR less than or equal to this maximum rating.
  3. RF performance characteristics have been determined using crystals with an ESR of 40 Ω and CL of 10 pF.
  4. Total load capacitance as seen by the crystal.
  5. The tuning step size is the effective step size when incrementing one of the tuning capacitors by one count. The step size for the each of the indivdual tuning capacitors is twice this value.

Low Frequency Crystal Oscillator

Table 4.25.  Low Frequency Crystal Oscillator

ParameterSymbolTest ConditionMinTypMaxUnit
Crystal FrequencyFLFXO 32.768kHz
Supported Crystal equivalent series resistance (ESR)ESRLFXOGAIN = 080kΩ
GAIN = 1 to 3100kΩ
Supported range of crystal load capacitance 1CLFXO_CLGAIN = 046pF
GAIN = 1610pF
GAIN = 21012.5pF
GAIN = 3 (see note2)12.518pF
Current consumptionICL12p5ESR = 70 kOhm, CL = 12.5 pF, GAIN= 2, AGC= 1357nA
Startup TimeTSTARTUPESR = 70 kOhm, CL = 7 pF, GAIN= 1, AGC= 163ms
On-chip tuning cap step sizeSSLFXO 0.26pF
On-chip tuning capacitor val- ue at minimum setting5CLFXO_MINCAPTUNE = 04pF
On-chip tuning capacitor val- ue at maximum setting5CLFXO_MAXCAPTUNE = 0x4F24.5pF
Note:
  1. Total load capacitance seen by the crystal
  2. Crystals with a load capacitance of greater than 12 pF require external load capacitors.
  3. In LFXO_CAL Register
  4. In LFXO_CFG Register
  5. The effective load capacitance seen by the crystal will be CLFXO/2. This is because each XTAL pin has a tuning cap and the two caps will be seen in series by the crystal

High Frequency RC Oscillator (HFRCO)

Unless otherwise indicated, typical conditions are: AVDD = DVDD = 3.0 V. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation, operating supply voltage range, and operating temperature range.

Table 4.26. High Frequency RC Oscillator (HFRCO)

ParameterSymbolTest ConditionMinTypMaxUnit
Frequency AccuracyFHFRCO_ACCFor all production calibrated fre- quencies-33%
Current consumption on all supplies 1IHFRCOFHFRCO = 1 MHz28µA
FHFRCO = 2 MHz28µA
FHFRCO = 4 MHz28µA
FHFRCO = 5 MHz30µA
FHFRCO = 7 MHz60µA
FHFRCO = 10 MHz66µA
FHFRCO = 13 MHz79µA
FHFRCO = 16 MHz88µA
FHFRCO = 19 MHz92µA
FHFRCO = 20 MHz105µA
FHFRCO = 26 MHz118µA
FHFRCO = 32 MHz141µA
FHFRCO = 38 MHz172µA
FHFRCO = 80 MHz289µA
Clock out current for HFRCODPLL2ICLKOUT_HFRCOD PLLFORECEEN bit of CTRL = 1 and the CLKOUTDIS0 bit of TEST = 1.2.72µA/MHz
FORECEEN bit of CTRL i= 1 and the CLKOUTDIS1 bit of TEST = 1.0.36µA/MHz
Startup Time3TSTARTUPFREQRANGE = 0 to 71.2µs
FREQRANGE = 8 to 150.6µs
ParameterSymbolTest ConditionMinTypMaxUnit
Band Frequency Limits4fHFRCO_BANDFREQRANGE = 03.715.24MHz
FREQRANGE = 14.396.26MHz
FREQRANGE = 25.257.55MHz
FREQRANGE = 36.229.01MHz
FREQRANGE = 47.8811.6MHz
FREQRANGE = 59.914.6MHz
FREQRANGE = 611.517.0MHz
FREQRANGE = 714.120.9MHz
FREQRANGE = 816.424.7MHz
FREQRANGE = 919.830.4MHz
FREQRANGE = 1022.734.9MHz
FREQRANGE = 1128.644.4MHz
FREQRANGE = 1233.051.0MHz
FREQRANGE = 1342.264.6MHz
FREQRANGE = 1448.874.8MHz
FREQRANGE = 1557.687.4MHz
Note:
  1. Does not include additional clock tree current. See specifications for additional current when selected as a clock source for a par- ticular clock multiplexer.
  2. When the HFRCO is enabled for characterization using the FORCEEN bit, the total current will be the HFRCO core current plus the specified CLKOUT current. When the HFRCO is enabled on demand, the clock current may be different.
  3. Hardware delay ensures settling to within ± 0.5%. Hardware also enforces this delay on a band change.
  4. The frequency band limits represent the lowest and highest freqeuncy which each band can achieve over the operating range.

Fast Start_Up RC Oscillator (FSRCO)

Table 4.27. Fast Start_Up RC Oscillator (FSRCO)

ParameterSymbolTest ConditionMinTypMaxUnit
FSRCO frequencyFFSRCO 17.22021.2MHz

Precision Low Frequency RC Oscillator (LFRCO)

Table 4.28. Precision Low Frequency RC Oscillator (LFRCO)

ParameterSymbolTest ConditionMinTypMaxUnit
Nominal oscillation frequen- cyFLFRCO 32.768kHz
Frequency accuracyFLFRCO_ACCNormal mode-33%
Precision mode1, across operat- ing temperature range2-500500ppm
Startup timetSTARTUPNormal mode204µs
Precision mode111.7ms
Current consumptionILFRCONormal mode175nA
Precision mode1, T = stable at 25

°C 3

655nA
Note:
  1. The LFRCO operates in high-precision mode when CFG_HIGHPRECEN is set to 1. High-precision mode is not available in EM4.
  2. Includes ± 40 ppm frequency tolerance of the HFXO crystal.
  3. Includes periodic re-calibration against HFXO crystal oscillator.

Ultra Low Frequency RC Oscillator

Table 4.29. Ultra Low Frequency RC Oscillator

ParameterSymbolTest ConditionMinTypMaxUnit
Oscillation FrequencyFULFRCO 0.9441.01.095kHz

GPIO Pins (3V GPIO pins)

Table 4.30.  GPIO Pins (3V GPIO pins)

ParameterSymbolTest ConditionMinTypMaxUnit
Leakage currentILEAK_IOMODEx = DISABLED, IOVDD =

1.71 V

1.9nA
MODEx = DISABLED, IOVDD =

3.0 V

2.5nA
MODEx = DISABLED, IOVDD =

3.8 V TA = 85 °C

150nA
Pins other than PA00, PA03, PB00, PC03, PC04 and PD00; MODEx = DISABLED, IOVDD =

3.8 V TA = 125 °C

200nA
Pins PA00, PA03, PB00, PC03, PC04 and PD00; MODEx = DISA- BLED, IOVDD = 3.8 V TA = 125

°C

550nA
Input low voltage1VILAny GPIO pin0.3*IOVDDV
RESETn0.3*DVDDV
Input high voltage1VIHAny GPIO pin0.7*IOVDDV
RESETn0.7*DVDDV
Hysteresis of input voltageVHYSAny GPIO pin0.05*IOVD DV
RESETn0.05*DVDDV
Output high voltageVOHSourcing 20mA, IOVDD = 3.0 V0.8 * IOVDDV
Sourcing 8mA, IOVDD = 1.71 V0.6 * IOVDDV
Output low voltageVOLSinking 20mA, IOVDD = 3.0 V0.2 * IOVDDV
Sinking 8mA, IOVDD = 1.71 V0.4 * IOVDDV
GPIO rise timeTGPIO_RISEIOVDD = 3.0 V, Cload = 50pF, SLEWRATE = 4, 10% to 90%8.4ns
IOVDD = 1.71 V, Cload = 50pF, SLEWRATE = 4, 10% to 90%13ns
GPIO fall timeTGPIO_FALLIOVDD = 3.0 V, Cload = 50pF, SLEWRATE = 4, 90% to 10%7.1ns
IOVDD = 1.71 V, Cload = 50pF, SLEWRATE = 4, 90% to 10%11.9ns
ParameterSymbolTest ConditionMinTypMaxUnit
Pull up/down resistance2RPULLAny GPIO pin. Pull-up to IOVDD: MODEn = DISABLE DOUT=1.

Pull-down to VSS: MODEn = WIREDORPULLDOWN DOUT = 0.

354455kΩ
RESETn pin. Pull-up to DVDD354455kΩ
Maximum filtered glitch widthTGFMODE = INPUT, DOUT = 127ns
Note:
  1. GPIO input thresholds are proportional to the IOVDD pin. RESETn input thresholds are proportional to DVDD.
  2. GPIO pull-ups connect to IOVDD supply, pull-downs connect to VSS. RESETn pull-up connects to DVDD.

Analog to Digital Converter (IADC)

Specified at 1 Msps, ADCCLK = 10 MHz, OSR=2, unless otherwise indicated.

Table 4.31.  Analog to Digital Converter (IADC)

ParameterSymbolTest ConditionMinTypMaxUnit
Main analog supplyVAVDDNormal Mode1.713.8V
Maximum Input Range1VIN_MAXMaximum allowable input voltage0AVDDV
Full-Scale VoltageVFSVoltage required for Full-Scale measurementVREF / Gain 
Input Measurement RangeVINDifferential Mode – Plus and Mi- nus inputs-VFS+VFSV
Single Ended Mode – One input tied to ground0VFSV
Input Sampling CapacitanceCsAnalog Gain = 1x1.8pF
Analog Gain = 2x3.6pF
Analog Gain = 4x7.2pF
Analog Gain = 0.5x0.9pF
ADC clock frequencyfCLKNormal Mode10MHz
Throughput ratefSAMPLEfCLK = 10 MHz, OSR = 21Msps
fCLK = 10 MHz, OSR = 3276.9ksps
Current from all supplies, Continuous operationIADC_CONTNormal Mode, 1 Msps, OSR = 2, fCLK = 10 MHz290385µA
Current in Standby mode. ADC is not functional but can wake up in 1us.ISTBYNormal Mode16µA
ADC Startup TimetstartupFrom power down state5µs
From Standby state1µs
ADC Resolution2Resolution 12bits
Differential NonlinearityDNLDifferential Input, OSR = 2, (No missing codes) .-1+/- 0.251.5LSB12
Integral NonlinearityINLNormal Mode, Differential Input, OSR = 2.-2.5+/- 0.652.5LSB12
Effective number of bits3ENOBDifferential Input. Gain = 1x, OSR

= 2, fIN = 10 kHz, Internal VREF=1.21V. OSR=2

10.511.7bits
Differential Input. Gain = 1x, OSR

= 32, fIN = 2.5 kHz, Internal VREF

= 1.21 V.

13.5bits
Differential Input. Gain = 1x, OSR

= 32, fIN = 2.5 kHz, External VREF = 1.25 V.

14.3bits
ParameterSymbolTest ConditionMinTypMaxUnit
Signal to Noise + Distortion Ratio3SNDRDifferential Input. Gain=1x, OSR = 2, fIN = 10 kHz, Internal VREF=1.21V6572.3dB
Differential Input. Gain=2x, OSR = 2, fIN = 10 kHz, Internal VREF=1.21V72.3dB
Differential Input. Gain=4x, OSR = 2, fIN = 10 kHz, Internal VREF=1.21V68.8dB
Differential Input. Gain=0.5x, OSR

= 2, fIN = 10 kHz, Internal VREF=1.21V

72.5dB
Total Harmonic DistortionTHDDifferential Input. Gain=1x, OSR = 2, fIN = 10 kHz, Internal VREF=1.21V-80.8-70dB
Spurious-Free Dynamic RangeSFDRDifferential Input. Gain=1x, OSR = 2, fIN = 10 kHz, Internal VREF=1.21V7286.5dB
Common Mode Rejection RatioCMRRNormal Mode. DC to 100 Hz87.0dB
Normal Mode. AC high frequency68.6dB
Power Supply Rejection Ra- tioPSRRNormal mode. DC to 100 Hz80.4dB
Normal mode. AC high frequency, using VREF pad.33.4dB
Normal mode. AC high frequency, using internal VBGR.65.2dB
Gain ErrorGEGAIN=1 and 0.5, using external VREF, direct mode.-0.30.0690.3%
GAIN=2, using external VREF, di- rect mode.-0.40.1510.4%
GAIN=3, using external VREF, di- rect mode.-0.70.1860.7%
GAIN=4, using external VREF, di- rect mode.-1.10.2271.1%
Internal VREF4, all GAIN settings-1.50.0231.5%
OffsetOFFSETGAIN=1 and 0.5, Differential Input-30.273LSB
GAIN=2, Differential Input-40.274LSB
GAIN=3, Differential Input-40.254LSB
GAIN=4, Differential Input-40.294LSB
External reference voltage range1VEVREF 1.0AVDDV
Internal Reference voltageVIVREF 1.21V
ParameterSymbolTest ConditionMinTypMaxUnit
Note:
  1. When inputs are routed to external GPIO pins, the maximum pin voltage is limited to the lower of the IOVDD and AVDD supplies.
  2. ADC output resolution depends on the OSR and digital averaging settings. With no digital averaging, ADC output resolution is 12 bits at OSR=2, 13 bits at OSR = 4, 14 bits at OSR = 8, 15 bits at OSR = 16, 16 bits at OSR = 32 and 17 bits at OSR = 64. Digital averaging has a similar impact on ADC output resolution. See the product reference manual for additional details.
  3. The relationship between ENOB and SNDR is specified according to the equation: ENOB = (SNDR – 1.76) / 6.02.
  4. Includes error from internal VREF drift.

Temperature Sense

Table 4.32.  Temperature Sense

ParameterSymbolTest ConditionMinTypMaxUnit
Temperature sensor range1TRANGE -40125°C
Temperature sensor resolu- tionTRESOLUTION 0.25°C
Measurement noise (RMS)TNOISESingle measurement0.6°C
16-sample average (TEMPAVG- NUM = 0)0.17°C
64-sample average (TEMPAVG- NUM = 1)0.12°C
Temperature offsetTOFFMean error of uncorrected output across full temperature range3.14°C
Temperature sensor accura- cy3TACCDirect output accuracy after mean error (TOFF) removed-33°C
After linearization in software, no calibration-22°C
After linearization in software, with single-temperature calibration at 25 °C4-1.51.5°C
Measurement intervaltMEAS 250ms
Note:
  1. The sensor reports absolute die temperature in °K. All specifications are in °C to match the units of the specified product temper- aure range.
  2. Error is measured as the deviation of the mean temperature reading from the expected die temperature. Accuracy numbers rep- resent statistical minimum and maximum using ± 4 standard deviations of measured error.
  3. The raw output of the temperature sensor is a predictable curve. It can be linearized with a polynomial function for additional ac- curacy.
  4. Assuming calibration accuracy of ± 0.25 °C.

Brown Out Detectors

DVDD BOD

BOD Thresholds on DVDD in EM0 and EM1 only, unless otherwise noted. Typical conditions are at TA = 25 °C. Minimum and maxi- mum values in this table represent the worst conditions across process variation, operating supply voltage range, and operating temperature range.

Table 4.33.  DVDD BOD                            

ParameterSymbolTest ConditionMinTypMaxUnit
BOD thresholdVDVDD_BODSupply Rising1.641.71V
Supply Falling1.621.65V
BOD response timetDVDD_BOD_DE- LAYSupply dropping at 100mV/µs slew rate10.95µs
BOD hysteresisVDVDD_BOD_HYS T 20mV
Note:

1. If the supply slew rate exceeds the specified slew rate, the BOD may trip later than expected (at a threshold below the minimum specified threshold), or the BOD may not trip at all (e.g., if the supply ramps down and then back up at a very fast rate)

LE DVDD BOD

BOD thresholds on DVDD pin for low energy modes EM2 to EM4, unless otherwise noted.

Table 4.34.  LE DVDD BOD

ParameterSymbolTest ConditionMinTypMaxUnit
BOD thresholdVDVDD_LE_BODSupply Falling1.51.71V
BOD response timetDVDD_LE_BOD_D ELAYSupply dropping at 2mV/µs slew rate150µs
BOD hysteresisVDVDD_LE_BOD_ HYST 20mV
Note:

1. If the supply slew rate exceeds the specified slew rate, the BOD may trip later than expected (at a threshold below the minimum specified threshold), or the BOD may not trip at all (e.g., if the supply ramps down and then back up at a very fast rate)

AVDD and IOVDD BODs

BOD thresholds for AVDD BOD and IOVDD BOD. Available in all energy modes.

Table 4.35.  AVDD and IOVDD BODs

ParameterSymbolTest ConditionMinTypMaxUnit
BOD thresholdVBODSupply falling1.451.71V
BOD response timetBOD_DELAYSupply dropping at 2mV/µs slew rate150µs
BOD hysteresisVBOD_HYST 20mV
Note:

1. If the supply slew rate exceeds the specified slew rate, the BOD may trip later than expected (at a threshold below the minimum specified threshold), or the BOD may not trip at all (e.g., if the supply ramps down and then back up at a very fast rate)

Revision History

Revision June, 2020

Revision February, 2020

Revision December, 2019

Revision October, 2019

  • In the front page block diagram, updated the lowest energy mode for LETIMER.
  • Updated 3.5.2 Low Energy Timer (LETIMER) lowest energy mode.
  • 1. Feature List updated with additional modulation formats, protocol stack, and security details.
  • 2. Ordering Information:
  • OPN numbering changes for security grade differentiator.
  • Supported protocol stack details updated.
  • 4.1 Electrical Characteristics:
  • Additional characterization results and preliminary test limits added where available.
  • Corrected maximum clock speed details in General Operating Conditions Table.
  • Removed specification lines with 3 dBm output power conditions from RF transmit tables.
  • Removed DECOUPLE BOD table.
  • Added timing diagrams and specifications for PDM and USART SPI.
  • Added 4.20 Typical Performance Curves.

Revision July, 2019

 

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